{"id":10487,"date":"2026-07-20T04:20:17","date_gmt":"2026-07-20T04:20:17","guid":{"rendered":"https:\/\/ic-vendor.com\/fqt1n80tf-ws\/"},"modified":"2026-07-20T04:20:17","modified_gmt":"2026-07-20T04:20:17","slug":"fqt1n80tf-ws","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/ar\/fqt1n80tf-ws\/","title":{"rendered":"FQT1N80TF-WS"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The onsemi FQT1N80TF-WS is an N-channel QFET enhancement-mode power MOSFET produced using planar stripe and DMOS technology. Housed in a SOT-223-3 surface-mount package, it offers a drain-source voltage of 800 V, a continuous drain current of 200 mA, and a maximum on-resistance of 20 \u03a9. The device is specifically tailored for high-voltage, low-current switching applications.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
\u0646\u0648\u0639 FET<\/td>\nN-Channel (Enhancement Mode)<\/td>\n<\/tr>\n
Drain-Source Voltage (VDSS)<\/td>\n800 V<\/td>\n<\/tr>\n
Continuous Drain Current (ID)<\/td>\n200 mA @ TC=25\u00b0C<\/td>\n<\/tr>\n
RDS(on) (Max)<\/td>\n20 \u03a9 @ 100 mA, VGS=10V<\/td>\n<\/tr>\n
RDS(on) (Typ)<\/td>\n15.5 \u03a9 @ 100 mA, VGS=10V<\/td>\n<\/tr>\n
Gate Threshold Voltage (VGS(th))<\/td>\n3.0V to 5.0V<\/td>\n<\/tr>\n
Gate Charge (Qg) (Max)<\/td>\n7.2 nC @ 10V<\/td>\n<\/tr>\n
Input Capacitance (Ciss) (Max)<\/td>\n195 pF @ 25V<\/td>\n<\/tr>\n
\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n2.1 W @ TC=25\u00b0C<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55\u00b0C to +150\u00b0C (TJ)<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nSOT-223-3 (TO-261)<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • 800 V drain-source voltage rating for high-voltage applications<\/li>\n
  • Low gate charge of 5.5 nC (typical) for fast switching<\/li>\n
  • Low reverse transfer capacitance (Crss) of 2.7 pF typical<\/li>\n
  • 100% avalanche tested for robustness<\/li>\n
  • Planar stripe and DMOS technology reduces on-resistance<\/li>\n
  • Compact SOT-223-3 surface-mount package<\/li>\n
  • RoHS compliant<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Switched-mode power supplies (SMPS)<\/li>\n
    • Active power factor correction (PFC)<\/li>\n
    • Electronic lamp ballasts<\/li>\n
    • High-voltage switching circuits<\/li>\n
    • Auxiliary power rails in industrial systems<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The onsemi FQT1N80TF-WS is an N-channel QFET enhancement-mode power MOSFET produced using planar stripe and DMOS technology. Housed in a SOT-223-3 surface-mount package, it offers a drain-source voltage of 800 V, a continuous drain current of 200 mA, and a maximum on-resistance of 20 \u03a9. The device is specifically tailored for high-voltage, low-current […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[1792],"chip_brand":[144],"class_list":["post-10487","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-fqt1n80tf-ws","chip_brand-on"],"acf":{"brief_explanation":"N-channel MOSFET, 800V, 200mA, 20\u03a9 RDS(on), SOT-223-3, QFET planar DMOS","date_code":"","package_case":"SOT-223-3 (TO-261) 6.5 x 3.5 x 1.6 mm","in_stock":5416,"datasheet":"https:\/\/www.onsemi.com\/pub\/Collateral\/FQT1N80TF-WS-D.PDF","price":"$0.375 @ 4ku","product_introduction":"The onsemi FQT1N80TF-WS is an N-channel enhancement-mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology, now part of onsemi. The device is rated for 800 V drain-source voltage and 200 mA continuous drain current, making it suitable for high-voltage, low-current switching applications. The advanced DMOS technology specifically reduces on-state resistance while providing superior switching performance and high avalanche energy capability. With a typical RDS(on) of 15.5 \u03a9 at 10V gate drive and low gate charge of 5.5 nC, the device achieves efficient switching with minimal drive power. The low reverse transfer capacitance (Crss) of 2.7 pF further enhances high-frequency switching performance. The compact SOT-223-3 package enables surface-mount assembly in space-constrained designs.","working_principle":"The FQT1N80TF-WS is an N-channel enhancement-mode MOSFET. When a positive voltage exceeding the threshold (3.0-5.0V) is applied between gate and source, an electric field induces a conductive channel between drain and source, allowing current flow. The on-resistance (RDS(on)) of 15.5 \u03a9 (typical) at VGS=10V determines the conduction losses during the on-state. The planar stripe DMOS structure features thousands of parallel cells that share the drain current, reducing overall on-resistance while maintaining high voltage capability through the lightly doped drift region. During switching, the gate charge (Qg) of 5.5 nC must be supplied\/removed to charge\/discharge the gate capacitance, determining the switching speed. The low Crss of 2.7 pF minimizes the Miller effect, reducing switching losses. The device features a built-in body diode (drain-source diode) with a forward voltage of 1.4V, useful in inductive load applications. Avalanche rating of 90 mJ ensures the device can absorb energy from inductive transients without failure.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>\n
      1<\/td>Gate<\/td>Input<\/td>Gate terminal \u2014 controls drain-source channel conductivity<\/td><\/tr>\n
      2<\/td>Drain<\/td>Output<\/td>Drain terminal \u2014 connects to load and high-voltage supply<\/td><\/tr>\n
      3<\/td>Source<\/td>Power<\/td>Source terminal \u2014 connects to ground or low-side reference<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • High-voltage auxiliary power supplies in SMPS circuits<\/li>\n
      • Active power factor correction (PFC) switch in low-power converters<\/li>\n
      • Electronic lamp ballast switching stages<\/li>\n
      • High-voltage relay driver and solid-state switch circuits<\/li>\n
      • Industrial control high-voltage switching and isolation<\/li>\n<\/ul>","alternative_models":"\n
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>\n
        onsemi<\/td>FQT1N60TF-WS<\/td>SOT-223-3<\/td>600V variant, same package<\/td><\/tr>\n
        Infineon<\/td>IPD60R190P6<\/td>TO-252<\/td>Higher current, different package<\/td><\/tr>\n
        STMicroelectronics<\/td>STN2NK80Z<\/td>DPAK<\/td>800V, 2A, higher power<\/td><\/tr>\n
        Vishay<\/td>IRFU420<\/td>TO-251AA<\/td>500V through-hole equivalent<\/td><\/tr>\n
        onsemi<\/td>FQD1N80<\/td>TO-251<\/td>Through-hole 800V version<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/10487","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/comments?post=10487"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/10487\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/media?parent=10487"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/categories?post=10487"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/tags?post=10487"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=10487"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}