{"id":10557,"date":"2026-07-20T05:46:23","date_gmt":"2026-07-20T05:46:23","guid":{"rendered":"https:\/\/ic-vendor.com\/sct2h12nytb\/"},"modified":"2026-07-20T05:46:23","modified_gmt":"2026-07-20T05:46:23","slug":"sct2h12nytb","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/ar\/sct2h12nytb\/","title":{"rendered":"SCT2H12NYTB"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The Rohm SCT2H12NYTB is a 1700V, 4A N-channel Silicon Carbide (SiC) MOSFET in a TO-268-2L surface mount package. Based on 2nd generation planar SiC technology, it features low on-resistance of 1150m\u03a9, fast switching speed, and high junction temperature capability up to 175\u00b0C. The device is designed for high-voltage power switching applications.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Drain-Source Voltage (VDSS)<\/td>\n1700 V<\/td>\n<\/tr>\n
Continuous Drain Current (ID)<\/td>\n4 A (at TC=25\u00b0C)<\/td>\n<\/tr>\n
On-Resistance (RDS(on))<\/td>\n1150 m\u03a9 (typ), 1500 m\u03a9 (max)<\/td>\n<\/tr>\n
Gate Threshold Voltage<\/td>\n1.6V to 4V<\/td>\n<\/tr>\n
Gate Charge (Qg)<\/td>\n14 nC (at VGS=18V)<\/td>\n<\/tr>\n
Input Capacitance (Ciss)<\/td>\n184 pF (at VDS=800V)<\/td>\n<\/tr>\n
Total Power Dissipation<\/td>\n44 W (at TC=25\u00b0C)<\/td>\n<\/tr>\n
Junction Temperature<\/td>\n-55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n
Gate-Source Voltage<\/td>\n-6V to +22V<\/td>\n<\/tr>\n
Drive Voltage<\/td>\n18V<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nTO-268-2L (SMD)<\/td>\n<\/tr>\n
Forward Transconductance<\/td>\n400 mS (min)<\/td>\n<\/tr>\n
Turn-On Delay Time<\/td>\n16 ns (typ)<\/td>\n<\/tr>\n
Turn-Off Delay Time<\/td>\n35 ns (typ)<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • 2nd generation planar SiC MOSFET technology<\/li>\n
  • 1700V high breakdown voltage for demanding applications<\/li>\n
  • Low on-resistance with fast switching speed<\/li>\n
  • Long creepage distance design with no center lead<\/li>\n
  • Simple gate drive with 18V drive voltage<\/li>\n
  • High junction temperature capability up to 175\u00b0C<\/li>\n
  • Pb-free lead plating, RoHS compliant<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Industrial power supplies<\/li>\n
    • Solar inverters<\/li>\n
    • EV charging stations<\/li>\n
    • Motor drives<\/li>\n
    • High-voltage DC-DC converters<\/li>\n
    • UPS systems<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The Rohm SCT2H12NYTB is a 1700V, 4A N-channel Silicon Carbide (SiC) MOSFET in a TO-268-2L surface mount package. Based on 2nd generation planar SiC technology, it features low on-resistance of 1150m\u03a9, fast switching speed, and high junction temperature capability up to 175\u00b0C. The device is designed for high-voltage power switching applications. Key Specifications […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[1858,1853,1856,1857],"chip_brand":[145],"class_list":["post-10557","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","tag-1700v","tag-rohm","tag-sct2h12nytb","tag-sic-mosfet","chip_brand-rohm"],"acf":{"brief_explanation":"1700V 4A N-channel SiC MOSFET, 2nd gen planar, 1150m\u03a9 RDS(on), TO-268-2L SMD, Rohm (EOL)","date_code":"","package_case":"TO-268-2L (18.9\u00d715.95\u00d75.2mm)","in_stock":5883,"datasheet":"https:\/\/fscdn.rohm.com\/en\/products\/databook\/catalog\/common\/shortform2024\/SF2024_EN_SiC_MOSFETs.pdf","price":"Contact supplier (EOL - Last Time Buy)","product_introduction":"The Rohm SCT2H12NYTB is a 1700V, 4A N-channel Silicon Carbide (SiC) MOSFET utilizing 2nd generation planar technology. It offers a typical on-resistance of 1150m\u03a9 with gate charge of only 14nC, enabling high-efficiency switching at high voltages. The TO-268-2L surface mount package provides long creepage distance without a center lead, enhancing high-voltage isolation. With junction temperature up to 175\u00b0C and fast switching times (16ns turn-on, 35ns turn-off delay), it is ideal for industrial power conversion applications.","working_principle":"The SCT2H12NYTB operates as an enhancement-mode N-channel MOSFET built on Silicon Carbide substrate. SiC material provides a critical electric field approximately 10\u00d7 higher than silicon, enabling 1700V blocking capability with low on-resistance. Applying 18V gate-source voltage creates an inversion layer in the channel, allowing current flow from drain to source. The planar gate structure provides reliable operation with simple drive requirements. The body diode inherent in the vertical structure can conduct during dead times. SiC's superior thermal conductivity (3\u00d7 silicon) supports high power dissipation in a compact SMD package.","pin_description":"Pin Description(Output pin definitions in table format only; return pure content without derivation or extra elaboration)","application_scenarios":"Application Scenarios (Output pin definitions in table format only; return pure content without derivation or extra elaboration)","alternative_models":"SCT2H12NWBTL1 (Rohm recommended replacement); SCT2H12NZ (TO-3PFM variant); Wolfspeed C2M0160120D (1200V, 1.6A, TO-247); Microsemi APT40Q120B (1200V SiC)"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/10557","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/comments?post=10557"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/10557\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/media?parent=10557"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/categories?post=10557"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/tags?post=10557"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=10557"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}