{"id":10779,"date":"2026-07-20T13:10:39","date_gmt":"2026-07-20T13:10:39","guid":{"rendered":"https:\/\/ic-vendor.com\/si1414dh-t1-ge3\/"},"modified":"2026-07-20T13:10:39","modified_gmt":"2026-07-20T13:10:39","slug":"si1414dh-t1-ge3","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/ar\/si1414dh-t1-ge3\/","title":{"rendered":"SI1414DH-T1-GE3"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The SI1414DH-T1-GE3 from Vishay Siliconix is a single N-Channel 30 V TrenchFET power MOSFET in a compact SOT-363 (SC-70-6) package. It features an RDS(on) of 46 mOhm at 4.5 V, a continuous drain current of 4 A, and a low gate charge of 5.7 nC, making it ideal for low-voltage switching and load management in portable electronics.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n
VDS<\/td>\n30 V<\/td>\n<\/tr>\n
ID (Continuous)<\/td>\n4 A<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n46 mOhm @ VGS=4.5V<\/td>\n<\/tr>\n
VGS(th) Max<\/td>\n1 V @ 250 uA<\/td>\n<\/tr>\n
Qg Max<\/td>\n15 nC @ VGS=8V<\/td>\n<\/tr>\n
Ciss Max<\/td>\n560 pF @ VDS=15V<\/td>\n<\/tr>\n
\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n2.8 W (Tc)<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nSOT-363 (SC-70-6)<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55 to 150 degC<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • TrenchFET power MOSFET technology<\/li>\n
  • Ultra-compact SOT-363 (SC-70-6) package<\/li>\n
  • Low RDS(on) of 46 mOhm at 4.5 V gate drive<\/li>\n
  • \u0634\u062d\u0646\u0629 \u0628\u0648\u0627\u0628\u0629 \u0645\u0646\u062e\u0641\u0636\u0629 \u0644\u0644\u062a\u0628\u062f\u064a\u0644 \u0627\u0644\u0633\u0631\u064a\u0639<\/li>\n
  • Lead-free and halogen-free<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Portable electronics load switching<\/li>\n
    • Battery management in handheld devices<\/li>\n
    • DC-DC converter primary-side switch<\/li>\n
    • Motor drive in small form-factor devices<\/li>\n
    • Power management in compact systems<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The SI1414DH-T1-GE3 from Vishay Siliconix is a single N-Channel 30 V TrenchFET power MOSFET in a compact SOT-363 (SC-70-6) package. It features an RDS(on) of 46 mOhm at 4.5 V, a continuous drain current of 4 A, and a low gate charge of 5.7 nC, making it ideal for low-voltage switching and load […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[2120],"chip_brand":[136],"class_list":["post-10779","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-si1414dh-t1-ge3","chip_brand-vishay"],"acf":{"brief_explanation":"N-Channel 30V 4A TrenchFET MOSFET, 46 mOhm, SOT-363, 5.7 nC gate charge","date_code":"","package_case":"SOT-363 (SC-70-6) (2.0 x 1.25 x 0.95 mm)","in_stock":6817,"datasheet":"https:\/\/www.vishay.com\/docs\/67073\/si1414dh.pdf","price":"$0.06 @ 1ku","product_introduction":"The SI1414DH-T1-GE3 from Vishay Siliconix is a single N-Channel TrenchFET power MOSFET rated at 30 V and 4 A in the ultra-compact SOT-363 (SC-70-6) package. The TrenchFET trench-gate structure achieves a low RDS(on) of 46 mOhm at 4.5 V gate drive, minimizing conduction losses in portable and battery-powered applications. The low gate charge of 5.7 nC enables efficient high-frequency switching with minimal driver power. Lead-free and halogen-free, this device is optimized for space-constrained power management circuits.","working_principle":"The SI1414DH uses Vishay's TrenchFET technology where vertical trench gates are etched into the silicon substrate and filled with polysilicon to form the gate electrode. This structure provides a much higher channel density than planar MOSFETs, resulting in lower RDS(on) per unit area. When a voltage above the threshold (typically 1 V) is applied between gate and source, an inversion layer forms along the trench sidewalls, creating a conductive channel between drain and source. The low gate charge enables fast turn-on and turn-off transitions, reducing switching losses in high-frequency applications.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>S<\/td>Source<\/td>Source terminal<\/td><\/tr>
      2<\/td>G<\/td>Gate<\/td>Gate control input<\/td><\/tr>
      3<\/td>S<\/td>Source<\/td>Source terminal<\/td><\/tr>
      4<\/td>D<\/td>Drain<\/td>Drain terminal<\/td><\/tr>
      5<\/td>D<\/td>Drain<\/td>Drain terminal<\/td><\/tr>
      6<\/td>D<\/td>Drain<\/td>Drain terminal<\/td><\/tr><\/table>","application_scenarios":"
      • Portable device battery load switching and protection<\/li>
      • Handheld electronics DC-DC converter switch<\/li>
      • Compact motor driver H-bridge in small devices<\/li>
      • Smartphone power management MOSFET<\/li>
      • Wearable device power routing and control<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Vishay<\/td>SI1414DH-T1-E3<\/td>SOT-363<\/td>Lead-free variant<\/td><\/tr>
        Infineon<\/td>BSB008NE2LX<\/td>SOT-363<\/td>30V N-Ch alternative<\/td><\/tr>
        Nexperia<\/td>PMV65XP<\/td>SOT-23<\/td>Lower current alternative<\/td><\/tr>
        ONsemi<\/td>NTS4001NT1G<\/td>SOT-363<\/td>30V N-Ch SC-70-6<\/td><\/tr>
        Diodes Inc<\/td>DMN2075U-7<\/td>SOT-23<\/td>20V N-Ch alternative<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/10779","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/comments?post=10779"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/10779\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/media?parent=10779"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/categories?post=10779"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/tags?post=10779"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=10779"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}