{"id":10780,"date":"2026-07-20T13:10:46","date_gmt":"2026-07-20T13:10:46","guid":{"rendered":"https:\/\/ic-vendor.com\/sir876adp-t1-ge3\/"},"modified":"2026-07-20T13:10:46","modified_gmt":"2026-07-20T13:10:46","slug":"sir876adp-t1-ge3","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/ar\/sir876adp-t1-ge3\/","title":{"rendered":"SIR876ADP-T1-GE3"},"content":{"rendered":"<h2>\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n<p>The SIR876ADP-T1-GE3 from Vishay Siliconix is a single N-Channel 100 V TrenchFET power MOSFET in a PowerPAK SO-8 package. It features an RDS(on) of 10.8 mOhm at 10 V gate drive, a continuous drain current of 40 A, and is optimized for primary-side switching in telecom and server 48 V DC-DC converter applications.<\/p>\n<h2>\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n<table>\n<tr>\n<td>VDS<\/td>\n<td>100 V<\/td>\n<\/tr>\n<tr>\n<td>ID (Continuous)<\/td>\n<td>40 A<\/td>\n<\/tr>\n<tr>\n<td>RDS(on) Max<\/td>\n<td>10.8 mOhm @ VGS=10V<\/td>\n<\/tr>\n<tr>\n<td>RDS(on) Typ<\/td>\n<td>14.5 mOhm @ VGS=4.5V<\/td>\n<\/tr>\n<tr>\n<td>VGS(th) Max<\/td>\n<td>2.8 V<\/td>\n<\/tr>\n<tr>\n<td>Qg Typ<\/td>\n<td>32.8 nC @ VGS=10V<\/td>\n<\/tr>\n<tr>\n<td>\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n<td>62.5 W (Tc)<\/td>\n<\/tr>\n<tr>\n<td>\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n<td>PowerPAK SO-8<\/td>\n<\/tr>\n<tr>\n<td>\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n<td>-55 to 150 degC<\/td>\n<\/tr>\n<\/table>\n<h2>\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n<ul>\n<li>TrenchFET power MOSFET technology<\/li>\n<li>100% Rg and UIS tested<\/li>\n<li>Halogen-free per IEC 61249-2-21<\/li>\n<li>Optimized for 48 V telecom\/server DC-DC<\/li>\n<li>Low RDS(on) of 10.8 mOhm at 10 V<\/li>\n<\/ul>\n<h2>\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n<ul>\n<li>Telecom 48 V DC-DC primary-side switch<\/li>\n<li>Server power supply full\/half-bridge converters<\/li>\n<li>Industrial DC-DC converter switching<\/li>\n<li>Battery management 48 V systems<\/li>\n<li>Secondary-side synchronous rectification<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The SIR876ADP-T1-GE3 from Vishay Siliconix is a single N-Channel 100 V TrenchFET power MOSFET in a PowerPAK SO-8 package. It features an RDS(on) of 10.8 mOhm at 10 V gate drive, a continuous drain current of 40 A, and is optimized for primary-side switching in telecom and server 48 V DC-DC converter applications. [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[2121],"chip_brand":[136],"class_list":["post-10780","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-sir876adp-t1-ge3","chip_brand-vishay"],"acf":{"brief_explanation":"N-Channel 100V 40A TrenchFET MOSFET, 10.8 mOhm, PowerPAK SO-8, 48V telecom DC-DC","date_code":"","package_case":"PowerPAK SO-8 (5.15 x 6.15 x 1.07 mm)","in_stock":6195,"datasheet":"https:\/\/www.vishay.com\/docs\/76609\/sir876adp.pdf","price":"$0.72 @ 1ku","product_introduction":"The SIR876ADP-T1-GE3 from Vishay Siliconix is a single N-Channel 100 V TrenchFET power MOSFET in a PowerPAK SO-8 package. With an RDS(on) of 10.8 mOhm at 10 V gate drive and 40 A continuous drain current, it is optimized for primary-side switching in 48 V telecom and server DC-DC converter applications. The device is 100% Rg and UIS tested, ensuring high reliability in demanding power conversion applications. The halogen-free PowerPAK SO-8 package provides excellent thermal performance with a junction-to-case thermal resistance of 2.4 degC\/W.","working_principle":"The SIR876ADP uses Vishay's TrenchFET technology with a vertical trench-gate structure that maximizes channel density for low RDS(on). When VGS exceeds the threshold voltage (max 2.8 V), inversion layers form along the trench sidewalls creating conductive channels between drain and source. The 100 V rating is achieved through a properly doped drift region between the channel and the drain. The PowerPAK SO-8 package features an exposed drain pad that provides a low thermal resistance path to the PCB, enabling the 62.5 W power dissipation rating. The 100% Rg and UIS testing ensures each device meets gate resistance and avalanche specifications.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>S<\/td><td>Source<\/td><td>Source terminal 1<\/td><\/tr><tr><td>2<\/td><td>S<\/td><td>Source<\/td><td>Source terminal 2<\/td><\/tr><tr><td>3<\/td><td>S<\/td><td>Source<\/td><td>Source terminal 3<\/td><\/tr><tr><td>4<\/td><td>G<\/td><td>Gate<\/td><td>Gate control input<\/td><\/tr><tr><td>5-8<\/td><td>D<\/td><td>Drain<\/td><td>Drain terminals (exposed pad)<\/td><\/tr><\/table>","application_scenarios":"<ul><li>Telecom 48 V full-bridge DC-DC converter primary switch<\/li><li>Server power supply half-bridge DC-DC converter<\/li><li>Industrial 48 V battery system power switching<\/li><li>Data center 48 V power distribution MOSFET<\/li><li>Secondary-side synchronous rectification in power supplies<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>Infineon<\/td><td>BSZ097N10NS5<\/td><td>SuperSO-8<\/td><td>100V N-Ch, 9.7 mOhm<\/td><\/tr><tr><td>ONsemi<\/td><td>FDMS86180<\/td><td>Power56<\/td><td>100V N-Ch, 8.5 mOhm<\/td><\/tr><tr><td>Vishay<\/td><td>SIR876DP-T1-GE3<\/td><td>SO-8<\/td><td>Standard SO-8 variant<\/td><\/tr><tr><td>Rohm<\/td><td>RSS070N10<\/td><td>PowerPAK<\/td><td>100V N-Ch alternative<\/td><\/tr><tr><td>Texas Instruments<\/td><td>CSD19531Q5A<\/td><td>SON 5x6<\/td><td>100V N-Ch, 9.4 mOhm<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/10780","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/comments?post=10780"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/10780\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/media?parent=10780"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/categories?post=10780"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/tags?post=10780"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=10780"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}