{"id":10818,"date":"2026-07-20T14:00:41","date_gmt":"2026-07-20T14:00:41","guid":{"rendered":"https:\/\/ic-vendor.com\/sir462dp-t1-ge3\/"},"modified":"2026-07-20T14:00:41","modified_gmt":"2026-07-20T14:00:41","slug":"sir462dp-t1-ge3","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/ar\/sir462dp-t1-ge3\/","title":{"rendered":"SIR462DP-T1-GE3"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The SIR462DP-T1-GE3 from Vishay Siliconix is a 30 V N-Channel TrenchFET power MOSFET in a PowerPAK SO-8 surface-mount package. Featuring a low RDS(on) of 7.9 mOhm at 10 V gate drive and 30 A continuous drain current, it is optimized for high-side switching, server VRM, POL, and DC-DC converter applications.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
VDS<\/td>\n30 V<\/td>\n<\/tr>\n
ID (Continuous)<\/td>\n30 A (Tc=25 degC)<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n7.9 mOhm @ VGS=10V<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n10 mOhm @ VGS=4.5V<\/td>\n<\/tr>\n
VGS(th)<\/td>\n1.0 to 3.0 V<\/td>\n<\/tr>\n
Qg (Typical)<\/td>\n8.8 nC @ VGS=4.5V<\/td>\n<\/tr>\n
\u0633\u064a\u0633<\/td>\n1155 pF @ VDS=15V<\/td>\n<\/tr>\n
\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n41.7 W (Tc) \/ 4.8 W (Ta)<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nPowerPAK SO-8<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55 to +150 degC<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • Low RDS(on) of 7.9 mOhm for efficient switching<\/li>\n
  • TrenchFET technology with 0.18 um process<\/li>\n
  • 100% Rg and UIS tested<\/li>\n
  • Very low gate charge of 8.8 nC for fast switching<\/li>\n
  • Halogen-free and RoHS compliant<\/li>\n
  • Avalanche energy rated at 48 mJ<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • High-side switch for server and VRM<\/li>\n
    • DC-DC converter power stage<\/li>\n
    • Point-of-load converters<\/li>\n
    • Battery management system switching<\/li>\n
    • Motor drive and load switching<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The SIR462DP-T1-GE3 from Vishay Siliconix is a 30 V N-Channel TrenchFET power MOSFET in a PowerPAK SO-8 surface-mount package. Featuring a low RDS(on) of 7.9 mOhm at 10 V gate drive and 30 A continuous drain current, it is optimized for high-side switching, server VRM, POL, and DC-DC converter applications. Key Specifications VDS […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[2159],"chip_brand":[136],"class_list":["post-10818","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-sir462dp-t1-ge3","chip_brand-vishay"],"acf":{"brief_explanation":"30V 30A N-Channel MOSFET, 7.9 mOhm RDS(on), PowerPAK SO-8, 8.8 nC Qg, TrenchFET","date_code":"","package_case":"PowerPAK SO-8 (6.15 x 5.15 x 1.02 mm)","in_stock":2236,"datasheet":"https:\/\/www.vishay.com\/docs\/68823\/sir462dp.pdf","price":"$0.563 @ 1ku","product_introduction":"The SIR462DP-T1-GE3 from Vishay Siliconix is a 30 V N-Channel TrenchFET power MOSFET in a PowerPAK SO-8 package. With RDS(on) of 7.9 mOhm at 10 V and 30 A continuous drain current, it is optimized for high-side switching in server VRM, POL, and DC-DC converter applications. The very low gate charge of 8.8 nC at 4.5 V enables high-frequency switching with minimal drive loss. The 0.18 um TrenchFET process provides excellent figure of merit (RDS(on) x Qg). 100% Rg and UIS tested with 48 mJ avalanche energy rating for reliability assurance.","working_principle":"The SIR462DP uses TrenchFET technology with a 0.18 um process to achieve low RDS(on) and low gate charge simultaneously. The trench gate structure provides high channel density with a short channel length, minimizing on-resistance. When VGS exceeds threshold (1.0 to 3.0 V), the inversion layer conducts. The low gate charge of 8.8 nC at 4.5 V enables fast switching transitions, reducing switching losses at high frequencies. The body diode provides reverse conduction path with 0.8 V typical forward voltage and 21 ns reverse recovery time.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1,2,3<\/td>S<\/td>Source<\/td>Source terminals<\/td><\/tr>
      4<\/td>G<\/td>Gate<\/td>Gate control input<\/td><\/tr>
      5,6,7,8<\/td>D<\/td>Drain<\/td>Drain terminals (exposed pad)<\/td><\/tr><\/table>","application_scenarios":"
      • Server VRM high-side MOSFET<\/li>
      • DC-DC buck converter control FET<\/li>
      • Point-of-load converter power stage<\/li>
      • Battery charger switching element<\/li>
      • Load switch and hot-swap control<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        ONsemi<\/td>FDMS86150ET80<\/td>Power56<\/td>30V 8 mOhm alternative<\/td><\/tr>
        Infineon<\/td>BSB014N04LX3<\/td>SuperSO8<\/td>40V 1.4 mOhm alternative<\/td><\/tr>
        TI<\/td>CSD17302Q5A<\/td>SON5x6<\/td>30V 6.3 mOhm alternative<\/td><\/tr>
        Vishay<\/td>SIR862DP-T1-GE3<\/td>PowerPAK SO-8<\/td>25V lower RDS(on) variant<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/10818","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/comments?post=10818"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/10818\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/media?parent=10818"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/categories?post=10818"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/tags?post=10818"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=10818"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}