{"id":10819,"date":"2026-07-20T14:00:47","date_gmt":"2026-07-20T14:00:47","guid":{"rendered":"https:\/\/ic-vendor.com\/si4850ey-t1-ge3\/"},"modified":"2026-07-20T14:00:47","modified_gmt":"2026-07-20T14:00:47","slug":"si4850ey-t1-ge3","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/ar\/si4850ey-t1-ge3\/","title":{"rendered":"SI4850EY-T1-GE3"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The SI4850EY-T1-GE3 from Vishay Siliconix is a 60 V N-Channel TrenchFET power MOSFET in an SO-8 (SOIC N) surface-mount package. Featuring RDS(on) of 22 mOhm at 10 V gate drive, 8.5 A continuous drain current, and reduced gate charge of 18 nC, it is optimized for fast switching in DC-DC converters and motor drive applications.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
VDS<\/td>\n60 V<\/td>\n<\/tr>\n
ID (Continuous)<\/td>\n8.5 A (Tc=25 degC) \/ 6 A (Ta=25 degC)<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n22 mOhm @ VGS=10V<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n31 mOhm @ VGS=4.5V<\/td>\n<\/tr>\n
VGS(th)<\/td>\n1.0 to 3.0 V<\/td>\n<\/tr>\n
Qg (Typical)<\/td>\n18 nC @ VGS=10V<\/td>\n<\/tr>\n
Ciss (Typical)<\/td>\n710 pF @ VDS=15V<\/td>\n<\/tr>\n
\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n3.3 W (Ta) \/ 1.7 W (steady)<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nSO-8 (SOIC N)<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55 to +175 degC<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • Reduced Qg for fast and efficient switching<\/li>\n
  • TrenchFET power MOSFET technology<\/li>\n
  • 60 V rating for 48 V system compatibility<\/li>\n
  • Industry-standard SO-8 footprint<\/li>\n
  • Halogen-free and RoHS compliant<\/li>\n
  • 175 degC maximum junction temperature<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • DC-DC converter primary side switch<\/li>\n
    • Motor drive and load switching<\/li>\n
    • 48 V telecom power systems<\/li>\n
    • Industrial control power switching<\/li>\n
    • Battery-powered system power management<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The SI4850EY-T1-GE3 from Vishay Siliconix is a 60 V N-Channel TrenchFET power MOSFET in an SO-8 (SOIC N) surface-mount package. Featuring RDS(on) of 22 mOhm at 10 V gate drive, 8.5 A continuous drain current, and reduced gate charge of 18 nC, it is optimized for fast switching in DC-DC converters and motor […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[2160],"chip_brand":[136],"class_list":["post-10819","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-si4850ey-t1-ge3","chip_brand-vishay"],"acf":{"brief_explanation":"60V 8.5A N-Channel MOSFET, 22 mOhm RDS(on), SO-8, 18 nC Qg, reduced Qg fast switching","date_code":"","package_case":"SO-8 \/ SOIC N (5.0 x 4.0 x 1.55 mm)","in_stock":10628,"datasheet":"https:\/\/www.vishay.com\/docs\/71146\/71146.pdf","price":"$0.63 @ 2.5ku","product_introduction":"The SI4850EY-T1-GE3 from Vishay Siliconix is a 60 V N-Channel TrenchFET power MOSFET in an industry-standard SO-8 package. The reduced gate charge design of 18 nC at 10 V enables fast switching with minimal drive loss, making it ideal for high-frequency DC-DC converters and motor drive applications. The 22 mOhm RDS(on) at 10 V and 8.5 A continuous drain current provide good current handling for 48 V telecom and industrial power systems. The 175 degC maximum junction temperature rating provides thermal margin for demanding applications.","working_principle":"The SI4850EY uses TrenchFET technology optimized for reduced gate charge (Qg). The trench structure with a moderate cell density provides a balance between low RDS(on) and low gate charge, achieving a favorable FOM (RDS(on) x Qg) for switching applications. The 18 nC gate charge enables switching frequencies in the hundreds of kHz range with manageable drive power dissipation. At 60 V, it is suitable for 48 V nominal systems with adequate voltage margin. The body diode provides reverse conduction with 0.8 V typical forward drop and 50 ns reverse recovery time.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>S<\/td>Source<\/td>Source terminal<\/td><\/tr>
      2<\/td>S<\/td>Source<\/td>Source terminal<\/td><\/tr>
      3<\/td>S<\/td>Source<\/td>Source terminal<\/td><\/tr>
      4<\/td>G<\/td>Gate<\/td>Gate control input<\/td><\/tr>
      5<\/td>D<\/td>Drain<\/td>Drain terminal<\/td><\/tr>
      6<\/td>D<\/td>Drain<\/td>Drain terminal<\/td><\/tr>
      7<\/td>D<\/td>Drain<\/td>Drain terminal<\/td><\/tr>
      8<\/td>D<\/td>Drain<\/td>Drain terminal<\/td><\/tr><\/table>","application_scenarios":"
      • 48 V telecom DC-DC converter primary switch<\/li>
      • Motor drive H-bridge power stage<\/li>
      • Industrial power supply switching element<\/li>
      • Battery-powered system load switch<\/li>
      • LED driver boost converter MOSFET<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        ONsemi<\/td>FDS8690<\/td>SO-8<\/td>60V 22 mOhm alternative<\/td><\/tr>
        Infineon<\/td>IRF7484MTRPBF<\/td>SO-8<\/td>60V 26 mOhm alternative<\/td><\/tr>
        TI<\/td>CSD18531Q5A<\/td>SON5x6<\/td>60V 10 mOhm alternative<\/td><\/tr>
        Vishay<\/td>SI4884DY-T1-GE3<\/td>SO-8<\/td>60V 22 mOhm alternative<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/10819","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/comments?post=10819"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/10819\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/media?parent=10819"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/categories?post=10819"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/tags?post=10819"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=10819"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}