{"id":11627,"date":"2026-07-26T12:52:11","date_gmt":"2026-07-26T12:52:11","guid":{"rendered":"https:\/\/ic-vendor.com\/r1lp0108esn-5sis1\/"},"modified":"2026-07-26T12:52:11","modified_gmt":"2026-07-26T12:52:11","slug":"r1lp0108esn-5sis1","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/ar\/r1lp0108esn-5sis1\/","title":{"rendered":"R1LP0108ESN-5SI#S1"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The R1LP0108ESN-5SI#S1 from Renesas is an 8Mbit (1Mx8) low-power asynchronous SRAM. 55ns access time with 15uA standby current for battery-backup operation. 3.3V supply. TSOP-32 industrial package. For mobile and battery-backed memory applications.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n
\u0627\u0644\u0646\u0648\u0639<\/td>\nLow-Power Asynchronous SRAM<\/td>\n<\/tr>\n
\u0627\u0644\u0643\u062b\u0627\u0641\u0629<\/td>\n8 Mbit (1M x 8)<\/td>\n<\/tr>\n
Organization<\/td>\n1M x 8<\/td>\n<\/tr>\n
Access Time<\/td>\n55 ns<\/td>\n<\/tr>\n
\u062c\u0647\u062f \u0627\u0644\u0625\u0645\u062f\u0627\u062f<\/td>\n2.7V to 3.6V (3.3V)<\/td>\n<\/tr>\n
\u0627\u0644\u062a\u064a\u0627\u0631 \u0627\u0644\u0627\u062d\u062a\u064a\u0627\u0637\u064a<\/td>\n15 uA typ (data retention)<\/td>\n<\/tr>\n
Active Current<\/td>\n40 mA max at 55ns<\/td>\n<\/tr>\n
Operating Temp<\/td>\n-40 to +85C (Industrial)<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nTSOP-32 (8×13.4mm)<\/td>\n<\/tr>\n<\/table>\n

\u0645\u0628\u062f\u0623 \u0627\u0644\u0639\u0645\u0644<\/h2>\n

The R1LP0108ESN uses a 6T SRAM cell array with power management features. The chip enable (CE2) pin, when deasserted, places the device in deep power-down mode with 15uA standby current suitable for battery-backed data retention. Address access time is 55ns. The output enable (OE) and write enable (WE) control read and write operations independently. The low-power design makes this SRAM ideal for mobile devices where battery life is critical and data must be retained during sleep modes.<\/p>\n

\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
    \n
  • Mobile devices<\/li>\n
  • Battery-backed memory<\/li>\n
  • Cache buffer<\/li>\n
  • Networking<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

    Product Overview The R1LP0108ESN-5SI#S1 from Renesas is an 8Mbit (1Mx8) low-power asynchronous SRAM. 55ns access time with 15uA standby current for battery-backup operation. 3.3V supply. TSOP-32 industrial package. For mobile and battery-backed memory applications. Key Specifications Type Low-Power Asynchronous SRAM Density 8 Mbit (1M x 8) Organization 1M x 8 Access Time 55 ns Supply […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[2903],"chip_brand":[12],"class_list":["post-11627","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","tag-r1lp0108esn-5sis1","chip_brand-renesas"],"acf":{"brief_explanation":"R1LP0108ESN-5SI#S1 - SRAM (Low Power)","date_code":"","package_case":"TSOP-32 (8x13.4mm)","in_stock":4524,"datasheet":"https:\/\/www.renesas.com\/us\/en\/products\/memory-logic\/memory","price":"$5.00 @ 1ku","product_introduction":"The R1LP0108ESN-5SI#S1 from Renesas is an 8Mbit (1Mx8) low-power asynchronous SRAM. 55ns access time with 15uA standby current for battery-backup operation. 3.3V supply. TSOP-32 industrial package. For mobile and battery-backed memory applications.","working_principle":"The R1LP0108ESN uses a 6T SRAM cell array with power management features. The chip enable (CE2) pin, when deasserted, places the device in deep power-down mode with 15uA standby current suitable for battery-backed data retention. Address access time is 55ns. The output enable (OE) and write enable (WE) control read and write operations independently. The low-power design makes this SRAM ideal for mobile devices where battery life is critical and data must be retained during sleep modes.","pin_description":"
    Pin Group<\/th>Name<\/th>Desc<\/th><\/tr>
    A0-A19<\/td>Address<\/td>20-bit address<\/td><\/tr>
    DQ0-DQ7<\/td>Data<\/td>8-bit I\/O<\/td><\/tr>
    CE1,CE2,OE,WE<\/td>Control<\/td>Enable signals<\/td><\/tr><\/table>","application_scenarios":"
    • Mobile devices<\/li>
    • Battery-backed memory<\/li>
    • Cache buffer<\/li>
    • Networking<\/li><\/ul>","alternative_models":"
      Model<\/th>Vendor<\/th>Diff<\/th><\/tr>
      R1LP0108ESN-45SI<\/td>Renesas<\/td>45ns version<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/11627","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/comments?post=11627"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/11627\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/media?parent=11627"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/categories?post=11627"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/tags?post=11627"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=11627"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}