\n| \u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n | -65 to +150 C (TJ)<\/td>\n<\/tr>\n<\/table>\n\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n\n- MDmesh second-generation technology<\/li>\n
- 100% avalanche tested<\/li>\n
- Low 40nC gate charge<\/li>\n
- High dv\/dt capability (15V\/ns)<\/li>\n<\/ul>\n
\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n\n- Switch-mode power supplies<\/li>\n
- Half\/full bridge converters<\/li>\n
- Motor drive inverters<\/li>\n
- Welding equipment<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"
Product Overview The STW20NM50 from STMicroelectronics is a 500V N-channel MDmesh Power MOSFET with 200mOhm RDS(on), 20A ID in TO-247 package. Key Specifications VDS 500V RDS(on) max 250 mOhm @ VGS=10V ID (TC=25C) 20A ID (TC=100C) 12.6A VGS(th) 3-5V Qg total 40 nC typical Ciss 1480 pF EAS 650 mJ (single pulse) dv\/dt 15 V\/ns […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,22],"tags":[],"chip_brand":[142],"class_list":["post-7633","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-video-ics","chip_brand-st"],"acf":{"brief_explanation":"500V N-ch MOSFET, 200mOhm, 20A, MDmesh, TO-247","date_code":"","package_case":"TO-247 (15.75 x 9.40 x 5.15 mm)","in_stock":2500,"datasheet":"https:\/\/www.st.com\/resource\/en\/datasheet\/stb20nm50t4.pdf","price":"$3.50 @ 100+","product_introduction":"The STW20NM50 from STMicroelectronics is a 500V N-channel Power MOSFET using second-generation MDmesh technology in TO-247 package. The MDmesh multiple-drain structure dramatically reduces RDS(on) to 200mOhm typical while maintaining low gate charge of 40nC. The device is 100% avalanche tested with 650mJ single-pulse energy rating. The 192W power dissipation and low thermal resistance (0.65C\/W) enable high-power switching applications.","working_principle":"The STW20NM50 operates as a high-voltage N-channel power MOSFET using MDmesh technology. (1) The MDmesh (Multiple Drain mesh) structure uses a strip layout for the drain region, reducing the JFET effect and on-resistance compared to conventional planar DMOS. The vertical current flow through multiple parallel strips provides low RDS(on) of 200mOhm with 500V breakdown voltage. (2) The gate charge of 40nC enables fast switching with modest gate drive current. At VDD=400V, ID=20A, the typical turn-on delay is 24ns with 16ns rise time, and turn-off delay of 40ns with 12ns fall time. (3) The integrated body diode provides a freewheeling path with 1.5V forward voltage at 20A. The reverse recovery time of 350ns and Qrr of 4.6uC should be considered for bridge and half-bridge topologies. The 15V\/ns dv\/dt rating ensures robustness in inductive switching applications.","pin_description":" | Pin<\/th> | Name<\/th> | Description<\/th><\/tr> |
|---|
| 1<\/td> | GATE<\/td> | MOSFET gate; internally connected to gate drive circuitry; connect to external gate resistor if needed<\/td><\/tr> | | 2<\/td> | DRAIN<\/td> | MOSFET drain; connected to tab (back of TO-247 package) for optimal thermal dissipation<\/td><\/tr> | | 3<\/td> | SOURCE<\/td> | MOSFET source; Kelvin source connection for accurate current sensing<\/td><\/tr><\/table> Package: TO-247. N-Channel MOSFET. VDSS: 500 V. ID: 20 A (at TC=25 C). RDS(on): 0.27 Ohm max. VGS(th): 3.0 V min, 4.0 V typ, 5.0 V max. Gate charge: 40 nC. Input capacitance: 2400 pF. Avalanche energy: 650 mJ. Power dissipation: 192 W (at TC=25 C). Rth(j-c): 0.78 C\/W.<\/p>","application_scenarios":" - SMPS Primary-Side Switching:<\/strong> 500 V VDSS and 20 A ID for offline flyback, forward, and half-bridge converter primary-side switches with 40 nC low gate charge for efficient high-frequency switching<\/li>
- Half\/Full Bridge Converters:<\/strong> Low 0.27 Ohm RDS(on) and 40 nC gate charge minimizing conduction and switching losses in 500 V DC-DC bridge topologies for server and telecom power<\/li>
- Motor Drive Inverters:<\/strong> 650 mJ avalanche rating and 500 V breakdown for robust inverter stage switching in 3-phase AC motor drives up to 2 kW<\/li>
- Welding Equipment:<\/strong> 192 W power dissipation and 0.78 C\/W thermal resistance enabling high-power inverter stages in arc welding and plasma cutting equipment<\/li>
- UPS and PFC Circuits:<\/strong> 500 V rating with 20 A continuous current for active PFC boost stages and UPS transfer switch inverters with high avalanche ruggedness<\/li><\/ul>","alternative_models":"
\n| Model<\/th> | Manufacturer<\/th> | Key Difference<\/th> | Package<\/th> | VDS\/ID<\/th><\/tr>\n |
|---|
| STW20NM50FD<\/td> | ST<\/td> | Fast body diode version optimized for switching applications with reduced trr and Qrr<\/td> | TO-247<\/td> | 500V\/20A<\/td><\/tr>\n | | STW26NM50<\/td> | ST<\/td> | 30A higher-current version with lower 100mOhm RDS(on) for higher power converters<\/td> | TO-247<\/td> | 500V\/30A<\/td><\/tr>\n | | FCA20N60N<\/td> | Fairchild\/onsemi<\/td> | 600V SuperFET with 0.19 Ohm RDS(on) and 20A for higher-voltage switching applications<\/td> | TO-247<\/td> | 600V\/20A<\/td><\/tr>\n | | IRFP460PBF<\/td> | Infineon<\/td> | 500V\/20A MOSFET with 0.27 Ohm RDS(on) in TO-247 for direct equivalent replacement<\/td> | TO-247<\/td> | 500V\/20A<\/td><\/tr>\n | | FCH47N60F<\/td> | onsemi<\/td> | SuperFET II 600V\/47A with ultra-low 0.047 Ohm RDS(on) for high-power SMPS primary switch<\/td> | TO-247<\/td> | 600V\/47A<\/td><\/tr>\n<\/table>\n The STW20NM50 is a 500V\/20A N-channel power MOSFET in TO-247 with 0.27 Ohm RDS(on) and 650mJ avalanche rating. The FD version offers fast body diode for bridge and motor drive applications. For 600V designs, the FCA20N60N SuperFET provides higher voltage margin with similar RDS(on).<\/p>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/7633","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/comments?post=7633"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/7633\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/media?parent=7633"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/categories?post=7633"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/tags?post=7633"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=7633"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}} |
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