{"id":8348,"date":"2026-06-28T12:26:45","date_gmt":"2026-06-28T12:26:45","guid":{"rendered":"https:\/\/ic-vendor.com\/pmeg3010be\/"},"modified":"2026-06-28T12:26:45","modified_gmt":"2026-06-28T12:26:45","slug":"pmeg3010be","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/ar\/pmeg3010be\/","title":{"rendered":"PMEG3010BE"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The PMEG3010BE from Nexperia (formerly NXP) is a 30 V, 1 A low forward voltage Schottky barrier rectifier in a SOD-323 (SC-76) surface-mount package. With a typical forward voltage of just 320 mV at 1 A and integrated guard ring for stress protection, it is designed for high-efficiency DC-DC conversion and low-voltage rectification in portable and space-constrained applications.<\/p>\n

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Reverse Voltage (VRRM)<\/td>\n30 V<\/td>\n<\/tr>\n
Average Forward Current (IFAV)<\/td>\n1 A<\/td>\n<\/tr>\n
Forward Voltage (VF @ 1 A)<\/td>\n320 mV (typ), 560 mV (max)<\/td>\n<\/tr>\n
Reverse Leakage (IR @ 30 V)<\/td>\n0.6 mA (typ)<\/td>\n<\/tr>\n
Peak Forward Surge (IFSM)<\/td>\n10 A<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-65\u00b0C to +150\u00b0C<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nSOD-323 (SC-76)<\/td>\n<\/tr>\n<\/table>\n

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    \n
  • Low forward voltage: 320 mV typical at 1 A for minimal conduction loss<\/li>\n
  • Planar Schottky barrier with integrated guard ring for ruggedness<\/li>\n
  • Ultra-small SOD-323 package for compact layouts<\/li>\n
  • High power density in small footprint<\/li>\n
  • Suitable for reflow and wave soldering<\/li>\n
  • Pb-Free and RoHS compliant<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Low-voltage rectification in DC-DC converters<\/li>\n
    • High-efficiency switch-mode power supply outputs<\/li>\n
    • Reverse polarity protection circuits<\/li>\n
    • Blocking and OR-ing diodes in power management<\/li>\n
    • Portable and battery-powered electronics<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The PMEG3010BE from Nexperia (formerly NXP) is a 30 V, 1 A low forward voltage Schottky barrier rectifier in a SOD-323 (SC-76) surface-mount package. With a typical forward voltage of just 320 mV at 1 A and integrated guard ring for stress protection, it is designed for high-efficiency DC-DC conversion and low-voltage rectification […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[],"chip_brand":[168],"class_list":["post-8348","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics","chip_brand-nxp"],"acf":{"brief_explanation":"30V, 1A Schottky rectifier, 320mV VF, SOD-323, guard ring protected","date_code":"","package_case":"SOD-323 (SC-76) (2.50 x 1.25 x 0.95 mm)","in_stock":4505,"datasheet":"https:\/\/assets.nexperia.com\/documents\/data-sheet\/PMEG3010BEA.pdf","price":"$0.06 @ 1ku","product_introduction":"The PMEG3010BE is a 30 V, 1 A planar Schottky barrier rectifier from Nexperia featuring an exceptionally low forward voltage drop of 320 mV typical at 1 A. The device incorporates an integrated guard ring around the Schottky junction for stress protection and improved reverse voltage capability. Encapsulated in the ultra-small SOD-323 (SC-76) surface-mount package measuring just 2.50 x 1.25 x 0.95 mm, it provides high power density in a minimal footprint. The low VF minimizes conduction losses in power conversion circuits, while the 150\u00b0C maximum junction temperature and 10 A peak forward surge rating ensure reliable operation under transient conditions. The PMEG3010BE is Pb-Free, RoHS compliant, and suitable for both reflow and wave soldering processes, making it ideal for portable electronics, DC-DC converters, and reverse polarity protection circuits.","working_principle":"The PMEG3010BE operates as a Schottky barrier rectifier using a metal-semiconductor junction rather than a conventional PN junction. The metal (typically a platinum or titanium-tungsten alloy) contacts the N-type silicon to form a rectifying barrier. Under forward bias, majority carriers (electrons) cross the barrier with low resistance, producing the characteristic low forward voltage drop of 320 mV at 1 A. Unlike PN junction diodes, Schottky diodes are majority-carrier devices with negligible reverse recovery charge, enabling very fast switching without the recovery losses associated with stored minority carriers. The integrated guard ring is a P-type diffused region surrounding the Schottky contact that prevents electric field crowding at the junction edge, improving breakdown voltage capability and protecting against voltage transients and electrostatic stress.","pin_description":"
      Pin<\/th>Name<\/th>Function<\/th><\/tr>
      1<\/td>Cathode<\/td>Negative terminal; marked with bar on package<\/td><\/tr>
      2<\/td>Anode<\/td>Positive terminal<\/td><\/tr><\/table>

      Package: SOD-323 (SC-76). The cathode (Pin 1) is identified by the marking bar on the package body. This is a two-terminal device.<\/p>","application_scenarios":"

      • DC-DC Converter Output Rectification<\/strong>: Low-loss freewheeling and output rectification in buck, boost, and buck-boost converters<\/li>
      • Reverse Polarity Protection<\/strong>: Series blocking diode for battery input protection with minimal voltage drop<\/li>
      • OR-ing Diode Applications<\/strong>: Power supply redundancy and hot-swap current steering in server and telecom systems<\/li>
      • Portable Electronics<\/strong>: Power management in smartphones, tablets, and wearable devices<\/li>
      • Low-Voltage Rectification<\/strong>: Secondary-side rectification in low-voltage forward converters<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>VR<\/th>IF<\/th>VF<\/td>Package<\/th>Notes<\/th><\/tr>
        MBR130T1G<\/td>onsemi<\/td>30 V<\/td>1 A<\/td>350 mV<\/td>SOD-123<\/td>Similar specs, larger package<\/td><\/tr>
        PMEG3010EP<\/td>Nexperia<\/td>30 V<\/td>1 A<\/td>320 mV<\/td>SOD-128<\/td>Same die, higher power package<\/td><\/tr>
        SB130L-TP<\/td>Micro Commercial<\/td>30 V<\/td>1 A<\/td>340 mV<\/td>SOD-123<\/td>Cost-effective alternative<\/td><\/tr>
        MBR0520LT1G<\/td>onsemi<\/td>20 V<\/td>0.5 A<\/td>385 mV<\/td>SOD-123<\/td>Lower VR, lower current<\/td><\/tr>
        PMEG2010BEA<\/td>Nexperia<\/td>20 V<\/td>1 A<\/td>300 mV<\/td>SOD-323<\/td>Lower VF, lower VR<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/8348","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/comments?post=8348"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/8348\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/media?parent=8348"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/categories?post=8348"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/tags?post=8348"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=8348"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}