{"id":8362,"date":"2026-06-28T12:43:00","date_gmt":"2026-06-28T12:43:00","guid":{"rendered":"https:\/\/ic-vendor.com\/qpa2237\/"},"modified":"2026-06-28T12:43:00","modified_gmt":"2026-06-28T12:43:00","slug":"qpa2237","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/ar\/qpa2237\/","title":{"rendered":"QPA2237"},"content":{"rendered":"

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The QPA2237 from Qorvo is a wideband 0.03-2.5 GHz, 10 W GaN-on-SiC power amplifier in a 20-lead 4×4 mm OVM QFN package. Providing >40 dBm saturated output power with >13 dB large signal gain and >48% PAE, it targets radar, electronic warfare, and communication system applications.<\/p>\n

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Frequency Range<\/td>\n0.03 to 2.5 GHz<\/td>\n<\/tr>\n
PSat<\/td>\n>40 dBm @ Pin=27 dBm<\/td>\n<\/tr>\n
PAE<\/td>\n>48%<\/td>\n<\/tr>\n
Large Signal Gain<\/td>\n>13 dB<\/td>\n<\/tr>\n
Small Signal Gain<\/td>\n>18.5 dB<\/td>\n<\/tr>\n
Input Return Loss<\/td>\n>9 dB<\/td>\n<\/tr>\n
Drain Bias<\/td>\nVd = 32 V, Idq = 360 mA<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nOVM QFN 4×4 mm (20-lead)<\/td>\n<\/tr>\n<\/table>\n

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    \n
  • 0.25 \u00b5m GaN on SiC process for high power density and reliability<\/li>\n
  • Wideband 0.03-2.5 GHz operation with flat power response<\/li>\n
  • Fully matched to 50 ohm at both RF ports<\/li>\n
  • High PAE >48% reduces system power dissipation<\/li>\n
  • Compact 4×4 mm surface-mount QFN package<\/li>\n<\/ul>\n

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      \n
    • Military and commercial radar<\/li>\n
    • Electronic warfare systems<\/li>\n
    • Communication systems and VSAT<\/li>\n
    • Cellular infrastructure base stations<\/li>\n
    • Point-to-point radio links<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The QPA2237 from Qorvo is a wideband 0.03-2.5 GHz, 10 W GaN-on-SiC power amplifier in a 20-lead 4×4 mm OVM QFN package. Providing >40 dBm saturated output power with >13 dB large signal gain and >48% PAE, it targets radar, electronic warfare, and communication system applications. Key Specifications Frequency Range 0.03 to 2.5 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[159],"class_list":["post-8362","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-qorvo"],"acf":{"brief_explanation":"0.03-2.5GHz 10W GaN PA, >40dBm PSat, >48% PAE, 4x4mm QFN","date_code":"","package_case":"OVM QFN-20 (4.00 x 4.00 x 0.85 mm)","in_stock":8375,"datasheet":"https:\/\/www.qorvo.com\/products\/d\/da003809","price":"$85.00 @ 1ku","product_introduction":"The QPA2237 from Qorvo is a wideband gallium nitride (GaN) on silicon carbide (SiC) power amplifier covering 0.03 GHz to 2.5 GHz in a compact 4x4 mm OVM QFN surface-mount package. Fabricated on Qorvo's production 0.25 \u00b5m GaN-on-SiC process, the device delivers greater than 10 W (40 dBm) saturated output power with greater than 13 dB large signal gain and greater than 48% power-added efficiency. The small signal gain exceeds 18.5 dB and both RF ports are internally matched to 50 ohms, simplifying system integration. The device operates from a 32 V drain supply with a quiescent current of 360 mA. The wide bandwidth covers L, S, and lower C bands in a single device, making it ideal for multi-band radar, electronic warfare, and communication applications. DC blocks are required on both RF ports and drain voltage is injected through an off-chip bias-tee on the RF output.","working_principle":"The QPA2237 uses a GaN HEMT (high electron mobility transistor) fabricated on a semi-insulating SiC substrate. The GaN\/SiC material system provides high breakdown voltage, high electron saturation velocity, and excellent thermal conductivity. The amplifier topology consists of a single-stage GaN HEMT with internal input and output matching networks implemented using planar transmission lines and MIM capacitors on the SiC substrate. The input match transforms the low gate impedance to 50 ohms over the 0.03-2.5 GHz band, while the output match transforms the low drain impedance to 50 ohms. Under large-signal drive, the HEMT operates in class AB bias with the gate biased at approximately -2.1 V for 360 mA quiescent drain current at 32 V. The high electron mobility of the GaN 2DEG channel and the high breakdown field of the GaN material enable the combination of high power density and wide bandwidth in a compact die.","pin_description":"
      Pin Group<\/th>Count<\/th>Function<\/th><\/tr>
      RF IN<\/td>1<\/td>RF input port (50 \u03a9 matched); requires external DC block capacitor<\/td><\/tr>
      RF OUT \/ DRAIN<\/td>1<\/td>RF output port (50 \u03a9 matched); drain bias injected via external bias-tee<\/td><\/tr>
      GATE<\/td>1<\/td>Gate bias control pin; typically biased at -2.1 V for class AB operation<\/td><\/tr>
      GND<\/td>16<\/td>RF and thermal ground connections (package base and perimeter pads)<\/td><\/tr>
      NC<\/td>1<\/td>No connect<\/td><\/tr><\/table>

      Package: 20-lead OVM QFN (4.0 x 4.0 x 0.85 mm). The exposed pad on the package bottom must be soldered to the PCB ground plane for proper RF grounding and thermal management. Both RF ports require external DC blocking capacitors.<\/p>","application_scenarios":"

      • Military Radar<\/strong>: Transmit power amplifier in S-band surveillance and tracking radar systems<\/li>
      • Electronic Warfare<\/strong>: Wideband jamming and spoofing amplifier covering multiple threat bands<\/li>
      • VSAT Terminals<\/strong>: L-band and S-band satellite uplink power amplification<\/li>
      • Cellular Infrastructure<\/strong>: Base station power amplifier for multi-band macro and small cell systems<\/li>
      • Point-to-Point Radio<\/strong>: Transmit chain amplifier in licensed microwave backhaul links<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Freq Range<\/th>PSat<\/th>PAE<\/th>Package<\/th>Notes<\/th><\/tr>
        QPA2238<\/td>Qorvo<\/td>0.03-3 GHz<\/td>20 W<\/td>40%<\/td>QFN<\/td>Higher power, wider bandwidth<\/td><\/tr>
        T1G4003532-FL<\/td>Qorvo<\/td>DC-3.5 GHz<\/td>25 W<\/td>40%<\/td>Flange<\/td>Higher power, flange package<\/td><\/tr>
        CGH40180PP<\/td>Wolfspeed<\/td>DC-6 GHz<\/td>180 W<\/td>55%<\/td>Flange<\/td>Much higher power<\/td><\/tr>
        HMC414MS8G<\/td>Analog Devices<\/td>5.5-8 GHz<\/td>5 W<\/td>32%<\/td>MSOP-8<\/td>Different band, lower power<\/td><\/tr>
        MAAL-011129<\/td>Macom<\/td>2-20 GHz<\/td>4 W<\/td>25%<\/td>DFN<\/td>Wider band, lower power<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/8362","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/comments?post=8362"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/8362\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/media?parent=8362"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/categories?post=8362"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/tags?post=8362"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=8362"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}