{"id":9015,"date":"2026-07-02T02:51:07","date_gmt":"2026-07-02T02:51:07","guid":{"rendered":"https:\/\/ic-vendor.com\/is43tr16512al-125kbli\/"},"modified":"2026-07-03T08:02:57","modified_gmt":"2026-07-03T08:02:57","slug":"is43tr16512al-125kbli","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/ar\/is43tr16512al-125kbli\/","title":{"rendered":"IS43TR16512AL-125KBLI"},"content":{"rendered":"

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The IS43TR16512AL-125KBLI is an ISSI 8Gb (512Mx16) DDR3L SDRAM running at DDR3-1600 (800MHz clock), 1.35V low-voltage operation with 1.5V backward compatibility, 8 internal banks, dual-rank, and 96-ball BGA package. -40C to +95C. (Obsolete)<\/p>\n

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Memory Type<\/td>\nDDR3L SDRAM<\/td>\n<\/tr>\n
\u0627\u0644\u0643\u062b\u0627\u0641\u0629<\/td>\n8 Gbit (512M x 16)<\/td>\n<\/tr>\n
Speed Grade<\/td>\nDDR3-1600 (11-11-11)<\/td>\n<\/tr>\n
Clock Frequency<\/td>\n800 MHz<\/td>\n<\/tr>\n
\u062c\u0647\u062f \u0627\u0644\u0625\u0645\u062f\u0627\u062f<\/td>\n1.35V (DDR3L), 1.5V compatible<\/td>\n<\/tr>\n
Organization<\/td>\n512M x 16, dual rank<\/td>\n<\/tr>\n
Banks<\/td>\n8 internal<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n96-ball BGA (10 x 14 mm)<\/td>\n<\/tr>\n<\/table>\n

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    \n
  • DDR3L 1.35V low-voltage operation<\/li>\n
  • Backward compatible with 1.5V DDR3<\/li>\n
  • 8n-bit prefetch architecture<\/li>\n
  • 8 internal banks for concurrent operation<\/li>\n
  • Dual-rank x16 organization<\/td>\n<\/tr>\n
  • Programmable CAS latency (CL)<\/li>\n
  • Programmable burst length: 4 and 8<\/li>\n
  • On-die termination (ODT)<\/li>\n
  • Auto self-refresh with thermal sensor<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Telecom and networking equipment<\/li>\n
    • Automotive infotainment systems<\/li>\n
    • Industrial embedded computing<\/li>\n
    • Data communication systems<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IS43TR16512AL-125KBLI is an ISSI 8Gb (512Mx16) DDR3L SDRAM running at DDR3-1600 (800MHz clock), 1.35V low-voltage operation with 1.5V backward compatibility, 8 internal banks, dual-rank, and 96-ball BGA package. -40C to +95C. (Obsolete) Key Specifications Memory Type DDR3L SDRAM Density 8 Gbit (512M x 16) Speed Grade DDR3-1600 (11-11-11) Clock Frequency 800 MHz […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[644],"chip_brand":[210],"class_list":["post-9015","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","tag-is43tr16512al-125kbli","chip_brand-issi"],"acf":{"brief_explanation":"8Gb DDR3L SDRAM, 512Mx16, DDR3-1600, 1.35V, 96-BGA","date_code":"","package_case":"96-Ball BGA (10 x 14 x 1.0 mm)","in_stock":7335,"datasheet":"https:\/\/www.issi.com\/WW\/pdf\/IS43TR16512A.pdf","price":"$5.80 @ 1ku","product_introduction":"The IS43TR16512AL-125KBLI is an ISSI 8Gb DDR3L SDRAM organized as 512M x 16 in a 96-ball BGA (10x14mm) package. The -125K speed grade supports DDR3-1600 operation with CL=11 at 800MHz clock frequency (1600 MT\/s data rate). The DDR3L suffix indicates 1.35V operation with backward compatibility to 1.5V DDR3, reducing power consumption by approximately 15% compared to standard DDR3. The dual-rank x16 organization with 8 internal banks enables high-bandwidth concurrent operation. The 8n-bit prefetch architecture fetches 8 bits of data per clock cycle, supporting the high data transfer rates. The device includes programmable CAS latency, programmable burst length (4 or 8), on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and write leveling for fly-by topology support. The auto self-refresh mode with integrated thermal sensor adjusts the refresh rate based on operating temperature. Note: This product has been obsoleted by ISSI.","working_principle":"The IS43TR16512AL-125KBLI is a double data rate synchronous dynamic random-access memory (DDR3L SDRAM). Data is transferred on both the rising and falling edges of the differential clock (CK\/CK#), achieving double the data rate compared to single-data-rate SDRAM. The 8n-bit prefetch architecture reads 8 bits from the memory array per access, which are then serialized to the data bus over 4 clock cycles at the I\/O rate. Commands (activate, read, write, precharge, refresh) are registered on the rising edge of CK. The 8 internal banks allow overlapping of row access, column access, and precharge operations across different banks, maximizing data bus utilization. The DDR3L mode register (MR0-MR2) configures CAS latency, burst length, additive latency, write recovery, and other operational parameters. The on-die termination (ODT) feature provides programmable termination resistance on the DQ, DQS, and DM pins, reducing signal reflections.","pin_description":"
      Pin Group<\/th>Description<\/th><\/tr>
      A0-A14, BA0-BA2<\/td>Row, column, and bank address inputs<\/td><\/tr>
      CK, CK#<\/td>Differential clock inputs<\/td><\/tr>
      CKE0, CKE1<\/td>Clock enable per rank<\/td><\/tr>
      CS0#, CS1#<\/td>Chip select per rank<\/td><\/tr>
      RAS#, CAS#, WE#<\/td>Command inputs<\/td><\/tr>
      DQ0-DQ15<\/td>Data bus (bidirectional)<\/td><\/tr>
      DQS0, DQS1<\/td>Data strobe (bidirectional, differential)<\/td><\/tr>
      DM0, DM1<\/td>Data mask inputs<\/td><\/tr>
      ODT0, ODT1<\/td>On-die termination control per rank<\/td><\/tr>
      RESET#<\/td>Asynchronous reset<\/td><\/tr><\/table>","application_scenarios":"
      • Automotive infotainment system main memory at 1.35V DDR3L-1600 with 8Gb density for rich media<\/li>
      • Telecom switch control plane memory with dual-rank x16 for high bandwidth data path<\/li>
      • Industrial embedded computing with 1.35V DDR3L reducing thermal load in sealed enclosures<\/li>
      • Networking equipment buffer memory with ODT for multi-DIMM signal integrity<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        IS43TR16512S2DL-125KBLI<\/td>ISSI<\/td>Direct replacement, newer revision<\/td><\/tr>
        MT41K256M16TW-107<\/td>Micron<\/td>4Gb x16 DDR3L, smaller density<\/td><\/tr>
        EM6AB16CWKG-12H<\/td>Etron<\/td>8Gb DDR3L, x16<\/td><\/tr>
        H5TQ4G63AFR-PBC<\/td>SK Hynix<\/td>4Gb x16 DDR3L-1600<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/9015","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/comments?post=9015"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/9015\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/media?parent=9015"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/categories?post=9015"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/tags?post=9015"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=9015"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}