{"id":9020,"date":"2026-07-02T03:09:11","date_gmt":"2026-07-02T03:09:11","guid":{"rendered":"https:\/\/ic-vendor.com\/si1416edh-t1-ge3\/"},"modified":"2026-07-03T08:03:07","modified_gmt":"2026-07-03T08:03:07","slug":"si1416edh-t1-ge3","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/ar\/si1416edh-t1-ge3\/","title":{"rendered":"SI1416EDH-T1-GE3"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The SI1416EDH-T1-GE3 is a Vishay TrenchFET N-channel MOSFET rated at 30V, 3.9A, with 58mOhm max RDS(on) in an SC-70-6 (SOT-363) package. Features 1500V HBM ESD protection, low gate charge, and fast switching. -55C to +150C.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n
\u0646\u0648\u0639 \u0627\u0644\u0642\u0646\u0627\u0629<\/td>\nN-Channel<\/td>\n<\/tr>\n
VDS<\/td>\n30 V<\/td>\n<\/tr>\n
\u0628\u0637\u0627\u0642\u0629 \u0627\u0644\u0647\u0648\u064a\u0629<\/td>\n3.9 A (Tc)<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n58 mOhm @ VGS=10V<\/td>\n<\/tr>\n
VGS(th)<\/td>\n0.6 V to 1.4 V<\/td>\n<\/tr>\n
Gate Charge (typ)<\/td>\n7.5 nC @ 10V<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nSC-70-6 \/ SOT-363<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • TrenchFET power MOSFET technology<\/li>\n
  • 30V, 3.9A in tiny SC-70-6 package<\/li>\n
  • 58mOhm max RDS(on) at VGS=10V<\/li>\n
  • Low gate charge: 7.5nC typical<\/li>\n
  • 1500V HBM ESD protection<\/li>\n
  • 100% Rg tested<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Load switches in portable devices<\/li>\n
    • DC-DC converter switches<\/li>\n
    • Battery management circuits<\/li>\n
    • Power management in handheld electronics<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The SI1416EDH-T1-GE3 is a Vishay TrenchFET N-channel MOSFET rated at 30V, 3.9A, with 58mOhm max RDS(on) in an SC-70-6 (SOT-363) package. Features 1500V HBM ESD protection, low gate charge, and fast switching. -55C to +150C. Key Specifications Channel Type N-Channel VDS 30 V ID 3.9 A (Tc) RDS(on) Max 58 mOhm @ VGS=10V […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[649],"chip_brand":[136],"class_list":["post-9020","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-si1416edh-t1-ge3","chip_brand-vishay"],"acf":{"brief_explanation":"N-ch TrenchFET MOSFET, 30V, 3.9A, 58mOhm, SC-70-6","date_code":"","package_case":"6-Pin SC-70 \/ SOT-363 (2.0 x 1.25 x 1.0 mm)","in_stock":3754,"datasheet":"https:\/\/www.vishay.com\/docs\/67580\/si1416ed.pdf","price":"$0.13 @ 1ku","product_introduction":"The SI1416EDH-T1-GE3 is a Vishay Siliconix TrenchFET N-channel enhancement mode power MOSFET in an ultra-compact SC-70-6 (SOT-363) package. The TrenchFET technology utilizes a vertical trench gate structure that dramatically reduces cell size and on-resistance compared to planar MOSFETs, achieving 58mOhm max RDS(on) at VGS=10V in a package measuring only 2.0 x 1.25mm. The 30V drain-source voltage and 3.9A continuous drain current ratings make it suitable for low-voltage power management in portable and handheld electronics. The low gate charge of 7.5nC typical at 10V enables efficient high-frequency switching in DC-DC converter applications. The 1500V HBM ESD protection provides robustness during handling. The sub-1.4V threshold voltage enables direct drive from 1.8V or 2.5V logic levels.","working_principle":"The SI1416EDH-T1-GE3 uses Vishay TrenchFET technology, where the gate electrode is formed in a vertical trench etched into the silicon, surrounded by the channel region on both vertical sidewalls. This double-diffused vertical channel provides twice the channel width per unit cell area compared to planar MOSFETs, significantly reducing specific on-resistance. When VGS exceeds the threshold voltage (0.6V to 1.4V), an inversion layer forms along the trench sidewalls, connecting the N+ source to the N-epitaxial drain region, allowing current to flow vertically from drain to source. The trench structure eliminates the JFET region present in planar MOSFETs, further reducing on-resistance.","pin_description":"
      Pin<\/th>Mnemonic<\/th>Description<\/th><\/tr>
      1<\/td>D<\/td>Drain<\/td><\/tr>
      2<\/td>D<\/td>Drain<\/td><\/tr>
      3<\/td>S<\/td>Source<\/td><\/tr>
      4<\/td>G<\/td>Gate<\/td><\/tr>
      5<\/td>D<\/td>Drain<\/td><\/tr>
      6<\/td>D<\/td>Drain<\/td><\/tr><\/table>","application_scenarios":"
      • Portable device load switch driven from 1.8V MCU GPIO with sub-1.4V threshold voltage<\/li>
      • Single-cell Li-ion DC-DC buck converter synchronous switch at 2.0x1.25mm footprint<\/li>
      • Battery protection circuit MOSFET with 1500V ESD and 58mOhm RDS(on)<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        SI1416EDH-T1-BE3<\/td>Vishay<\/td>Same die, tape and reel<\/td><\/tr>
        SI1426DH-T1-GE3<\/td>Vishay<\/td>20V, lower RDS(on)<\/td><\/tr>
        DMN2075U-7<\/td>Diodes Inc<\/td>20V, 75mOhm, SOT-23<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/9020","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/comments?post=9020"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/posts\/9020\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/media?parent=9020"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/categories?post=9020"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/tags?post=9020"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=9020"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}