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Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBTs) are composite power semiconductor devices that combine the advantages of MOSFETs and BJTs. Their core features include high input impedance, low driving power and fast switching speed from MOSFETs, as well as low on-state voltage drop and high current/voltage carrying capacity from BJTs. Common types include discrete IGBTs, IGBT modules (the mainstream in industry) and IPM (Intelligent Power Modules) that integrate drive and protection circuits, covering voltage levels from 600V to 6500V. They are widely used in medium and high-voltage high-power power conversion scenarios such as new energy vehicle electronic controls, photovoltaic inverters, wind power converters, industrial frequency converters, rail transit traction, power grid energy storage and variable frequency control of white goods, serving as the “core switches” of power electronic systems.

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2A 33V resettable PTC fuse, 1812

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1812 (4.5×3.2mm)
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10uF 16V X5R ceramic capacitor, 1206

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1206 (3.2×1.6mm)
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20V 2A Schottky rectifier, 0.43V Vf, SOD-123W

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SOD-123W (4.6×2.2mm)
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Micro-Lock Plus 2-circuit header, 1.25mm pitch, SMD

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6.8V 500mW Zener diode, SOD-123

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SOD-123 (3.7×1.6mm)
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Power relay, 4PDT, 5A, 24VDC coil, 2000V breakdown

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Through-hole (28.5×10.6×22.5mm)
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50A 600V IGBT power module

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Power module (62x28mm)
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2×20 pin header, 1.27mm pitch, surface mount

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SMD 2×20 (1.27mm pitch)
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1A 20V Schottky rectifier, SOD-123

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SOD-123
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2.2uH shielded power inductor, 30A Isat, SMD 6.5×6.5mm

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SMD (6.5×6.5×3.0mm)
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