Insulated Gate Bipolar Transistors (IGBTs) are composite power semiconductor devices that combine the advantages of MOSFETs and BJTs. Their core features include high input impedance, low driving power and fast switching speed from MOSFETs, as well as low on-state voltage drop and high current/voltage carrying capacity from BJTs. Common types include discrete IGBTs, IGBT modules (the mainstream in industry) and IPM (Intelligent Power Modules) that integrate drive and protection circuits, covering voltage levels from 600V to 6500V. They are widely used in medium and high-voltage high-power power conversion scenarios such as new energy vehicle electronic controls, photovoltaic inverters, wind power converters, industrial frequency converters, rail transit traction, power grid energy storage and variable frequency control of white goods, serving as the “core switches” of power electronic systems.
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