{"id":10446,"date":"2026-07-20T03:55:58","date_gmt":"2026-07-20T03:55:58","guid":{"rendered":"https:\/\/ic-vendor.com\/bas70-07215\/"},"modified":"2026-07-20T03:55:58","modified_gmt":"2026-07-20T03:55:58","slug":"bas70-07215","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/es\/bas70-07215\/","title":{"rendered":"BAS70-07,215"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The BAS70-07,215 from Nexperia is a dual isolated Schottky diode pair in a compact SOT-143 surface-mount package. Rated at 70V reverse voltage and 70mA average forward current, it features low forward voltage drop (1V max), low leakage current, and very fast switching. The dual isolated configuration allows independent circuit connections. AEC-Q101 qualified, this device is optimized for ultra-high-speed switching, voltage clamping, and RF detection applications.<\/p>\n<h2>Especificaciones<\/h2>\n<table>\n<tr>\n<td>Diode Configuration<\/td>\n<td>Dual Isolated<\/td>\n<\/tr>\n<tr>\n<td>Repetitive Peak Reverse Voltage (VRRM)<\/td>\n<td>70V<\/td>\n<\/tr>\n<tr>\n<td>Average Forward Current (IF(AV))<\/td>\n<td>70mA<\/td>\n<\/tr>\n<tr>\n<td>Forward Voltage Max (VF)<\/td>\n<td>1.0V<\/td>\n<\/tr>\n<tr>\n<td>Forward Surge Current (IFSM)<\/td>\n<td>100mA<\/td>\n<\/tr>\n<tr>\n<td>Reverse Leakage Current (IR)<\/td>\n<td>10 \u00b5A max<\/td>\n<\/tr>\n<tr>\n<td>Diode Type<\/td>\n<td>Schottky<\/td>\n<\/tr>\n<tr>\n<td>Paquete<\/td>\n<td>SOT-143, 4-pin (2.9 x 1.3 x 1.0mm)<\/td>\n<\/tr>\n<tr>\n<td>Temperatura de funcionamiento<\/td>\n<td>-65\u00b0C to +150\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>Cualificaci\u00f3n<\/td>\n<td>AEC-Q101<\/td>\n<\/tr>\n<\/table>\n<h2>Caracter\u00edsticas<\/h2>\n<ul>\n<li>Dual isolated Schottky diodes in a single package<\/li>\n<li>Very fast switching with negligible reverse recovery time<\/li>\n<li>Low forward voltage drop: 1V max<\/li>\n<li>Low reverse leakage current: 10\u00b5A max<\/li>\n<li>High breakdown voltage: 70V<\/li>\n<li>AEC-Q101 qualified for automotive use<\/li>\n<\/ul>\n<h2>Aplicaciones<\/h2>\n<ul>\n<li>Ultra-high-speed switching circuits<\/li>\n<td>Voltage clamping and protection<\/td>\n<\/tr>\n<tr>\n<td>RF detector and mixer circuits<\/li>\n<td>Reverse polarity protection<\/li>\n<td>Logic level translation and OR-ing<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The BAS70-07,215 from Nexperia is a dual isolated Schottky diode pair in a compact SOT-143 surface-mount package. Rated at 70V reverse voltage and 70mA average forward current, it features low forward voltage drop (1V max), low leakage current, and very fast switching. The dual isolated configuration allows independent circuit connections. AEC-Q101 qualified, this [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[1751],"chip_brand":[168],"class_list":["post-10446","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics","tag-bas70-07215","chip_brand-nxp"],"acf":{"brief_explanation":"Dual isolated Schottky diode, 70V, 70mA, 1V Vf, SOT-143, AEC-Q101, ultra-fast switching","date_code":"","package_case":"SOT-143 (2.9 x 1.3 x 1.0mm), 4-pin","in_stock":6890,"datasheet":"https:\/\/assets.nexperia.com\/documents\/data-sheet\/BAS70.pdf","price":"$0.10 @ 1ku","product_introduction":"The BAS70-07,215 from Nexperia is a dual isolated Schottky diode device housed in a SOT-143 surface-mount package. Each diode is rated for 70V reverse voltage and 70mA average forward current with a maximum forward voltage drop of only 1V. The Schottky barrier construction provides negligible reverse recovery time, making it ideal for ultra-high-speed switching applications where conventional PN junction diodes would introduce unacceptable switching losses. The isolated dual configuration enables independent circuit connections for OR-ing, clamping, or mixing. AEC-Q101 qualification ensures reliability in automotive and industrial environments.","working_principle":"1. Schottky Barrier Junction: The diode utilizes a metal-semiconductor (Schottky) junction rather than a P-N junction. Majority carrier conduction eliminates minority carrier storage, resulting in negligible reverse recovery time (essentially zero for practical purposes).\n2. Forward Conduction: When forward biased, electrons cross the metal-semiconductor barrier with a forward voltage drop of approximately 0.4-1.0V, lower than silicon PN diodes (0.7V typical), reducing conduction losses.\n3. Reverse Blocking: Under reverse bias, the Schottky barrier blocks current flow. The 70V breakdown voltage is determined by the metal work function and semiconductor doping profile. Leakage current is higher than PN diodes but limited to 10\u00b5A maximum.\n4. Isolated Dual Configuration: The two diodes share no common electrical node, allowing each to be connected independently in different circuit branches.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>Cathode 1<\/td><td>Cathode of diode 1<\/td><\/tr><tr><td>2<\/td><td>Anode 1<\/td><td>Anode of diode 1<\/td><\/tr><tr><td>3<\/td><td>Cathode 2<\/td><td>Cathode of diode 2<\/td><\/tr><tr><td>4<\/td><td>Anode 2<\/td><td>Anode of diode 2<\/td><\/tr><\/table>","application_scenarios":"<ul><li>RF signal detector and mixer circuits in communication receivers<\/li><li>Ultra-high-speed logic level translation and digital signal OR-ing<\/li><li>Voltage clamping in ESD-sensitive analog input protection<\/li><li>Reverse polarity protection for low-current battery-powered circuits<\/li><li>Solar cell blocking diode in energy harvesting applications<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>Nexperia<\/td><td>BAS70-04,215<\/td><td>SOT-143<\/td><td>Common cathode configuration<\/td><\/tr><tr><td>Nexperia<\/td><td>BAS70-05,215<\/td><td>SOT-143<\/td><td>Common anode configuration<\/td><\/tr><tr><td>Nexperia<\/td><td>BAS70-06,215<\/td><td>SOT-143<\/td><td>Series configuration<\/td><\/tr><tr><td>Nexperia<\/td><td>BAS70,215<\/td><td>SOT-23<\/td><td>Single diode version, 2-pin<\/td><\/tr><tr><td>Vishay<\/td><td>BAS70-04W<\/td><td>SOT-323<\/td><td>Dual Schottky, smaller package<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/10446","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/comments?post=10446"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/10446\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/media?parent=10446"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/categories?post=10446"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/tags?post=10446"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/chip_brand?post=10446"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}