{"id":10513,"date":"2026-07-20T04:51:47","date_gmt":"2026-07-20T04:51:47","guid":{"rendered":"https:\/\/ic-vendor.com\/s3m\/"},"modified":"2026-07-20T04:51:47","modified_gmt":"2026-07-20T04:51:47","slug":"s3m","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/es\/s3m\/","title":{"rendered":"S3M"},"content":{"rendered":"

Productos<\/h2>\n

The onsemi S3M is a 100V, 3.0A surface-mount Schottky rectifier in an SMC (DO-214AB) package. Featuring low forward voltage drop of 850 mV at 3A, high surge current capability of 100A, and glass-passivated junction, it is optimized for switch-mode power supply rectification, reverse polarity protection, and freewheeling diode applications up to 100V.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n
Diode Type<\/td>\nSchottky Barrier Rectifier<\/td>\n<\/tr>\n
Reverse Voltage (VRRM)<\/td>\n100 V<\/td>\n<\/tr>\n
Average Forward Current (IF(AV))<\/td>\n3.0 A<\/td>\n<\/tr>\n
Forward Voltage (VF)<\/td>\n850 mV @ 3A<\/td>\n<\/tr>\n
Reverse Current (IR)<\/td>\n0.5 mA @ 100V (25C)<\/td>\n<\/tr>\n
Non-Repetitive Surge Current (IFSM)<\/td>\n100 A (8.3 ms)<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-65C to +150C (TJ)<\/td>\n<\/tr>\n
Paquete<\/td>\nSMC (DO-214AB)<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Glass-passivated junction for enhanced reliability and uniform characteristics<\/li>\n
  • Low forward voltage drop of 850 mV at 3A for high efficiency<\/li>\n
  • High surge current capability of 100A for robust transient handling<\/li>\n
  • Zero reverse recovery time suitable for high-frequency switching<\/li>\n
  • Clip-bonded internal construction for low thermal resistance<\/li>\n
  • UL 94V-0 flame retardant epoxy molding compound<\/li>\n
  • Pb-Free, Halogen Free, RoHS compliant<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Secondary rectification in switch-mode power supplies<\/li>\n
    • Freewheeling diode in motor drive and inverter circuits<\/li>\n
    • Reverse polarity protection for DC power inputs<\/li>\n
    • DC-DC converter output rectification<\/li>\n
    • Battery charger and power management circuits<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The onsemi S3M is a 100V, 3.0A surface-mount Schottky rectifier in an SMC (DO-214AB) package. Featuring low forward voltage drop of 850 mV at 3A, high surge current capability of 100A, and glass-passivated junction, it is optimized for switch-mode power supply rectification, reverse polarity protection, and freewheeling diode applications up to 100V. Key […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[1817],"chip_brand":[144],"class_list":["post-10513","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics","tag-s3m","chip_brand-on"],"acf":{"brief_explanation":"Schottky rectifier, 100V, 3.0A, 850mV Vf, SMC (DO-214AB), 100A surge, glass-passivated","date_code":"","package_case":"SMC (DO-214AB) 7.0 x 6.0 x 2.2 mm","in_stock":12345,"datasheet":"https:\/\/www.onsemi.com\/pub\/Collateral\/SS3M-D.PDF","price":"$0.145 @ 3ku","product_introduction":"The onsemi S3M is a surface-mount Schottky barrier rectifier rated at 100V reverse voltage and 3.0A average forward current, housed in an SMC (DO-214AB) package. The device uses glass-passivated junction technology with a clip-bonded internal construction that provides low thermal resistance and high reliability. The Schottky construction offers key advantages over standard PN rectifiers: low forward voltage of 850 mV at rated current, zero reverse recovery time for high-frequency operation, and low power loss for improved efficiency. The high surge current rating of 100A (8.3 ms half-sine) ensures robust transient handling. The S3M is Pb-Free, Halogen Free, and RoHS compliant.","working_principle":"The S3M operates as a Schottky barrier rectifier using a metal-semiconductor junction. In forward bias, majority carriers cross the barrier with a forward voltage of 850 mV at 3A \u2014 lower than equivalent PN junction diodes (typically 1.1V+), reducing power dissipation and improving efficiency. Because conduction is via majority carriers only, there is no minority carrier storage, resulting in zero reverse recovery time \u2014 the diode switches off instantly when reverse-biased, making it ideal for high-frequency SMPS applications. In reverse bias, leakage current of 0.5 mA flows at 100V (25C). The glass-passivated junction provides edge termination protection, ensuring stable breakdown characteristics. The clip-bonded construction reduces parasitic resistance and improves thermal performance compared to traditional wire-bonded packages. The 100A surge rating allows the device to withstand transient overcurrent events such as hot-plug inrush currents.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>\n
      1<\/td>Cathode<\/td>Terminal<\/td>Marked by color band \u2014 connect to positive side for forward conduction<\/td><\/tr>\n
      2<\/td>Anode<\/td>Terminal<\/td>Connect to negative side for forward conduction<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • Secondary side rectification in 48V flyback and forward SMPS topologies<\/li>\n
      • Freewheeling diode in 24V\/48V motor drive H-bridge circuits<\/li>\n
      • Reverse polarity protection at DC power input connectors<\/li>\n
      • DC-DC buck converter freewheeling diode for 48V to 12V conversion<\/li>\n
      • Solar panel string blocking diode for 72-cell modules<\/li>\n<\/ul>","alternative_models":"\n
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>\n
        onsemi<\/td>SS3M<\/td>SMC<\/td>Same specs, different series designation<\/td><\/tr>\n
        onsemi<\/td>S5M<\/td>SMC<\/td>5.0A higher current variant<\/td><\/tr>\n
        Vishay<\/td>SS3H10-E3\/57T<\/td>SMC<\/td>100V 3A equivalent<\/td><\/tr>\n
        Taiwan Semiconductor<\/td>S3MHE3\/57T<\/td>SMC<\/td>Equivalent 100V Schottky<\/td><\/tr>\n
        onsemi<\/td>SS3B<\/td>SMC<\/td>100V 3A with different Vf spec<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/10513","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/comments?post=10513"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/10513\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/media?parent=10513"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/categories?post=10513"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/tags?post=10513"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/chip_brand?post=10513"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}