{"id":10558,"date":"2026-07-20T05:46:26","date_gmt":"2026-07-20T05:46:26","guid":{"rendered":"https:\/\/ic-vendor.com\/sh8kc6tb1\/"},"modified":"2026-07-20T05:46:26","modified_gmt":"2026-07-20T05:46:26","slug":"sh8kc6tb1","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/es\/sh8kc6tb1\/","title":{"rendered":"SH8KC6TB1"},"content":{"rendered":"

Productos<\/h2>\n

The Rohm SH8KC6TB1 is a dual N-channel MOSFET in an SOP-8 package, featuring 60V drain-source voltage and 6.5A continuous drain current per channel. With low on-resistance of 25m\u03a9 at VGS=10V, it is ideal for switching applications requiring compact dual-MOSFET solutions.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Channel Type<\/td>\nN+N (Dual N-channel)<\/td>\n<\/tr>\n
Drain-Source Voltage (VDSS)<\/td>\n60 V<\/td>\n<\/tr>\n
Continuous Drain Current (ID)<\/td>\n6.5 A (per channel, TC=25\u00b0C)<\/td>\n<\/tr>\n
Pulsed Drain Current<\/td>\n26 A<\/td>\n<\/tr>\n
RDS(on) at VGS=10V<\/td>\n25 m\u03a9 (typ), 32 m\u03a9 (max)<\/td>\n<\/tr>\n
RDS(on) at VGS=4.5V<\/td>\n33 m\u03a9 (typ), 46 m\u03a9 (max)<\/td>\n<\/tr>\n
Gate Threshold Voltage<\/td>\n1.0V to 2.5V<\/td>\n<\/tr>\n
Total Gate Charge (Qg)<\/td>\n3.9 nC (typ)<\/td>\n<\/tr>\n
Forward Transconductance<\/td>\n4.2 S<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n2.0W (ceramic board), 1.4W (copper board)<\/td>\n<\/tr>\n
Junction Temperature<\/td>\n-55\u00b0C to +150\u00b0C<\/td>\n<\/tr>\n
Gate-Source Voltage<\/td>\n\u00b120V<\/td>\n<\/tr>\n
Paquete<\/td>\nSOP-8 (6.0\u00d75.0\u00d71.75mm)<\/td>\n<\/tr>\n
Avalanche Energy<\/td>\n3.5 mJ<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Dual N-channel MOSFET in compact SOP-8 package<\/li>\n
  • Low on-resistance: 25m\u03a9 at VGS=10V<\/li>\n
  • Drive voltage: 4.5V capable<\/li>\n
  • Lead-free plating, RoHS compliant<\/li>\n
  • Halogen free<\/li>\n
  • Surface mount package for automated assembly<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Switching power supplies<\/li>\n
    • Convertidores CC-CC<\/li>\n
    • Motor drivers<\/li>\n
    • Load switches<\/li>\n
    • Battery management systems<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The Rohm SH8KC6TB1 is a dual N-channel MOSFET in an SOP-8 package, featuring 60V drain-source voltage and 6.5A continuous drain current per channel. With low on-resistance of 25m\u03a9 at VGS=10V, it is ideal for switching applications requiring compact dual-MOSFET solutions. Key Specifications Channel Type N+N (Dual N-channel) Drain-Source Voltage (VDSS) 60 V Continuous […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[1860,473,1853,1859],"chip_brand":[145],"class_list":["post-10558","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","tag-dual-n-channel","tag-mosfet","tag-rohm","tag-sh8kc6tb1","chip_brand-rohm"],"acf":{"brief_explanation":"Dual N-channel 60V 6.5A MOSFET, 25m\u03a9 RDS(on) at 10V, SOP-8 package, Rohm","date_code":"","package_case":"SOP-8 (6.0\u00d75.0\u00d71.75mm)","in_stock":2539,"datasheet":"https:\/\/fscdn.rohm.com\/jp\/products\/databook\/datasheet\/discrete\/transistor\/mosfet\/sh8kc6tb1-j.pdf","price":"$0.45 @ 1000+","product_introduction":"The Rohm SH8KC6TB1 is a dual N-channel power MOSFET in an SOP-8 surface mount package. It features a 60V drain-source voltage rating and 6.5A continuous drain current per channel. The low on-resistance of 25m\u03a9 at VGS=10V (33m\u03a9 at 4.5V) and total gate charge of only 3.9nC make it highly efficient for switching applications. The dual configuration in a single compact package is ideal for applications requiring complementary or synchronous switching.","working_principle":"The SH8KC6TB1 contains two independent N-channel enhancement-mode MOSFETs in a single SOP-8 package. Each MOSFET operates by applying a positive voltage to the gate relative to the source, creating an inversion channel that allows current to flow from drain to source. The low RDS(on) is achieved through optimized cell density and trench MOSFET technology. The dual configuration allows both MOSFETs to be used independently or in synchronous rectification configurations.","pin_description":"Pin Description(Output pin definitions in table format only; return pure content without derivation or extra elaboration)","application_scenarios":"Application Scenarios (Output pin definitions in table format only; return pure content without derivation or extra elaboration)","alternative_models":"AO4606 (Alpha & Omega); SI4926DY (Vishay); FDS8958A (Fairchild); IRF7331 (Infineon)"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/10558","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/comments?post=10558"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/10558\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/media?parent=10558"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/categories?post=10558"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/tags?post=10558"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/chip_brand?post=10558"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}