{"id":10739,"date":"2026-07-20T11:13:42","date_gmt":"2026-07-20T11:13:42","guid":{"rendered":"https:\/\/ic-vendor.com\/tpn7r506nhl1qm\/"},"modified":"2026-07-20T11:13:42","modified_gmt":"2026-07-20T11:13:42","slug":"tpn7r506nhl1qm","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/es\/tpn7r506nhl1qm\/","title":{"rendered":"TPN7R506NH,L1Q(M"},"content":{"rendered":"

Productos<\/h2>\n

The TPN7R506NH,L1Q(M from Toshiba is an N-channel power MOSFET built on the U-MOS VIII-H process technology. With a VDSS of 60 V, an RDS(on) of 7.5 mohm (max) at VGS=10V, and a continuous drain current of 26 A, it is designed for DC-DC converter, switching regulator, and motor drive applications in a compact TSON Advance (3.3 x 3.3 mm) package.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
Voltage (VDSS)<\/td>\n60 V<\/td>\n<\/tr>\n
Drain Current (ID)<\/td>\n26 A (Tc=25 degC)<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n7.5 mohm at VGS=10V<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n16 mohm at VGS=6.5V<\/td>\n<\/tr>\n
Gate Threshold (Vth)<\/td>\n2.0-4.0 V<\/td>\n<\/tr>\n
Gate Charge (Qg)<\/td>\n22 nC (typ) at VGS=10V<\/td>\n<\/tr>\n
Input Capacitance (Ciss)<\/td>\n1410 pF (typ)<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n42 W (Tc=25 degC)<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55 to 150 degC (Tj)<\/td>\n<\/tr>\n
Paquete<\/td>\nTSON Advance-8 (3.3 x 3.3 mm)<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • U-MOS VIII-H trench MOSFET technology<\/li>\n
  • Ultra-low RDS(on): 6.0 mohm typical at VGS=10V<\/li>\n
  • Low gate charge: 22 nC for efficient switching<\/li>\n
  • High avalanche energy: 105 mJ<\/li>\n
  • Enhancement-mode N-channel<\/li>\n
  • Compact TSON Advance package with exposed drain pad<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • DC-DC converters and switching regulators<\/li>\n
    • Motor drivers and motor control<\/li>\n
    • Power management in computing systems<\/li>\n
    • Battery-powered portable devices<\/li>\n
    • Load switching and power routing<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The TPN7R506NH,L1Q(M from Toshiba is an N-channel power MOSFET built on the U-MOS VIII-H process technology. With a VDSS of 60 V, an RDS(on) of 7.5 mohm (max) at VGS=10V, and a continuous drain current of 26 A, it is designed for DC-DC converter, switching regulator, and motor drive applications in a compact […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[2078],"chip_brand":[169],"class_list":["post-10739","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-tpn7r506nhl1qm","chip_brand-toshiba"],"acf":{"brief_explanation":"N-ch MOSFET, 60V 26A, 7.5mohm RDS(on), U-MOS VIII-H, TSON Advance-8","date_code":"","package_case":"TSON Advance-8 (3.3 x 3.3 x 0.85 mm)","in_stock":3641,"datasheet":"https:\/\/toshiba.semicon-storage.com\/info\/docget.jsp?did=68563","price":"$0.97 @ 1ku","product_introduction":"The TPN7R506NH,L1Q(M from Toshiba Electronic Devices and Storage is an N-channel power MOSFET fabricated on the U-MOS VIII-H trench gate process. It offers a VDSS of 60 V with an extremely low RDS(on) of 7.5 mohm maximum at VGS=10V, making it ideal for high-efficiency switching applications. The device delivers 26 A continuous drain current at Tc=25 degC with a power dissipation rating of 42 W. The TSON Advance package features an exposed drain pad for excellent thermal performance in a compact 3.3 x 3.3 mm footprint.","working_principle":"The TPN7R506NH utilizes Toshiba U-MOS VIII-H trench MOSFET technology where vertical trenches are etched into the N-type epitaxial layer and lined with gate oxide and polysilicon gate electrodes. This structure creates a high-density cell layout that minimizes the on-resistance while maintaining good switching performance. When a positive gate-source voltage exceeding the threshold (Vth = 2.0-4.0 V) is applied, an inversion layer forms in the P-body region beneath the gate, creating a conductive channel between source and drain. The trench structure provides a very short current path, reducing RDS(on). The low gate charge (22 nC) enables fast switching, reducing transition losses in high-frequency DC-DC converter applications.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>SOURCE<\/td>Power<\/td>Source terminal<\/td><\/tr>
      2<\/td>SOURCE<\/td>Power<\/td>Source terminal<\/td><\/tr>
      3<\/td>SOURCE<\/td>Power<\/td>Source terminal<\/td><\/tr>
      4<\/td>GATE<\/td>Input<\/td>Gate control terminal<\/td><\/tr>
      5<\/td>DRAIN<\/td>Power<\/td>Drain terminal (exposed pad)<\/td><\/tr>
      6<\/td>DRAIN<\/td>Power<\/td>Drain terminal (exposed pad)<\/td><\/tr>
      7<\/td>DRAIN<\/td>Power<\/td>Drain terminal (exposed pad)<\/td><\/tr>
      8<\/td>DRAIN<\/td>Power<\/td>Drain terminal (exposed pad)<\/td><\/tr><\/table>","application_scenarios":"
      • Synchronous rectifier in DC-DC buck converters<\/li>
      • Motor drive half-bridge and H-bridge stages<\/li>
      • Notebook and server VRM power stages<\/li>
      • Battery-powered portable device load switches<\/li>
      • Industrial power supply switching elements<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Toshiba<\/td>TPN7R506NL,L1Q<\/td>TSON Advance-8<\/td>Same die, different grading<\/td><\/tr>
        Infineon<\/td>BSZ060N06LS5ATMA1<\/td>SuperSO-8<\/td>6 mohm, 60V N-ch<\/td><\/tr>
        onsemi<\/td>NTMFS6H800N1T1G<\/td>DFN-8<\/td>8 mohm, 60V MOSFET<\/td><\/tr>
        Vishay<\/td>SI6206DN-T1-GE3<\/td>PowerPAK-8<\/td>6.5 mohm, 60V<\/td><\/tr>
        Toshiba<\/td>TPH7R006NH,L1Q<\/td>SOP-Advance-8<\/td>7 mohm, 60V, standard pkg<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/10739","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/comments?post=10739"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/10739\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/media?parent=10739"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/categories?post=10739"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/tags?post=10739"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/chip_brand?post=10739"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}