{"id":10825,"date":"2026-07-20T14:01:06","date_gmt":"2026-07-20T14:01:06","guid":{"rendered":"https:\/\/ic-vendor.com\/si7461dp-t1-ge3\/"},"modified":"2026-07-20T14:01:06","modified_gmt":"2026-07-20T14:01:06","slug":"si7461dp-t1-ge3","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/es\/si7461dp-t1-ge3\/","title":{"rendered":"SI7461DP-T1-GE3"},"content":{"rendered":"

Productos<\/h2>\n

The SI7461DP-T1-GE3 from Vishay Siliconix is a P-Channel 60 V TrenchFET power MOSFET in a PowerPAK SO-8 surface-mount package. Designed for high-side load switching and battery management, it features low RDS(on) for efficient power routing in automotive and industrial applications.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n
VDS<\/td>\n-60 V<\/td>\n<\/tr>\n
ID (Continuous)<\/td>\n-15 A (Tc=25 degC)<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n28 mOhm @ VGS=-10V<\/td>\n<\/tr>\n
VGS(th)<\/td>\n-1.0 to -3.0 V<\/td>\n<\/tr>\n
Paquete<\/td>\nPowerPAK SO-8<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55 to +150 degC<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • P-Channel for high-side switching<\/li>\n
  • 60 V rating for 48 V systems<\/li>\n
  • Low RDS(on) for minimal voltage drop<\/li>\n
  • TrenchFET technology<\/li>\n
  • PowerPAK SO-8 thermal package<\/li>\n
  • Halogen-free and RoHS compliant<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • High-side load switching<\/li>\n
    • Battery management and protection<\/li>\n
    • Reverse polarity protection<\/li>\n
    • Power routing and distribution<\/li>\n
    • Automotive 48 V system switching<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The SI7461DP-T1-GE3 from Vishay Siliconix is a P-Channel 60 V TrenchFET power MOSFET in a PowerPAK SO-8 surface-mount package. Designed for high-side load switching and battery management, it features low RDS(on) for efficient power routing in automotive and industrial applications. Key Specifications VDS -60 V ID (Continuous) -15 A (Tc=25 degC) RDS(on) Max […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[2166],"chip_brand":[136],"class_list":["post-10825","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-si7461dp-t1-ge3","chip_brand-vishay"],"acf":{"brief_explanation":"-60V -15A P-Channel MOSFET, 28 mOhm RDS(on), PowerPAK SO-8, high-side switch","date_code":"","package_case":"PowerPAK SO-8 (6.15 x 5.15 x 1.02 mm)","in_stock":9601,"datasheet":"https:\/\/www.vishay.com\/docs\/68877\/si7461dp.pdf","price":"$0.52 @ 3ku","product_introduction":"The SI7461DP-T1-GE3 from Vishay Siliconix is a -60 V P-Channel TrenchFET power MOSFET in a PowerPAK SO-8 package. The P-Channel configuration enables high-side switching without the charge pump circuitry required by N-Channel alternatives. With RDS(on) of 28 mOhm at -10 V gate drive and -15 A continuous drain current, it is optimized for battery management, load switching, and power distribution in 48 V automotive and industrial systems. The PowerPAK SO-8 package provides excellent thermal performance with exposed drain pad.","working_principle":"The SI7461DP operates as a P-Channel enhancement mode MOSFET. When the gate voltage is pulled below the source voltage by more than the threshold (1.0 to 3.0 V), a conductive P-channel forms between source and drain, allowing current to flow from source to drain. P-Channel MOSFETs are ideal for high-side switching because the source is connected to the positive supply, and the gate only needs to be pulled toward ground to turn on. The 60 V rating provides adequate margin for 48 V nominal systems. The TrenchFET structure provides low RDS(on) in a compact die size.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1,2,3<\/td>S<\/td>Source<\/td>Source terminals<\/td><\/tr>
      4<\/td>G<\/td>Gate<\/td>Gate control input<\/td><\/tr>
      5,6,7,8<\/td>D<\/td>Drain<\/td>Drain terminals (thermal pad)<\/td><\/tr><\/table>","application_scenarios":"
      • 48 V automotive battery high-side disconnect<\/li>
      • Battery management system charge\/discharge FET<\/li>
      • Reverse polarity protection switch<\/li>
      • Power distribution and load management<\/li>
      • Hot-swap and inrush current limiting<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        ONsemi<\/td>FDS6679<\/td>SO-8<\/td>-60V P-Channel alternative<\/td><\/tr>
        Infineon<\/td>IPD50N06S2L-23<\/td>SuperSO8<\/td>-60V P-Channel alternative<\/td><\/tr>
        Vishay<\/td>SI7465DP-T1-GE3<\/td>PowerPAK SO-8<\/td>-60V lower RDS(on) variant<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/10825","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/comments?post=10825"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/10825\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/media?parent=10825"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/categories?post=10825"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/tags?post=10825"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/chip_brand?post=10825"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}