{"id":10928,"date":"2026-07-21T05:18:21","date_gmt":"2026-07-21T05:18:21","guid":{"rendered":"https:\/\/ic-vendor.com\/nx3008pbks\/"},"modified":"2026-07-21T05:18:21","modified_gmt":"2026-07-21T05:18:21","slug":"nx3008pbks","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/es\/nx3008pbks\/","title":{"rendered":"NX3008PBKS"},"content":{"rendered":"

Productos<\/h2>\n

The NX3008PBKS is a 30V, 200mA dual P-channel Trench MOSFET manufactured by Nexperia in a SOT363 (SC-88) plastic package. Designed using Trench MOSFET technology for very fast switching and low threshold voltage, this dual device integrates two independent P-channel MOSFETs, making it ideal for relay driving, high-speed line driving, high-side load switching, and general switching circuits.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n
Channel Type<\/td>\nP-Channel (Dual)<\/td>\n<\/tr>\n
Drain-Source Voltage (VDS)<\/td>\n-30V<\/td>\n<\/tr>\n
Gate-Source Voltage (VGS)<\/td>\n-8V to +8V<\/td>\n<\/tr>\n
Drain Current (ID)<\/td>\n-200 mA @ VGS=-4.5V<\/td>\n<\/tr>\n
RDS(ON)<\/td>\n2.8 Ohm typ, 4.1 Ohm max @ VGS=-4.5V<\/td>\n<\/tr>\n
Threshold Voltage (VGSth)<\/td>\n-0.9V typical<\/td>\n<\/tr>\n
Total Power Dissipation<\/td>\n445 mW per device @ 25degC<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55degC to +150degC (TJ)<\/td>\n<\/tr>\n
Paquete<\/td>\nSOT363 (SC-88) – 2.9 x 1.5 x 1.0 mm<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Dual P-channel MOSFET in ultra-compact SOT363 package<\/li>\n
  • Low threshold voltage of -0.9V for low-voltage gate drive<\/li>\n
  • Trench MOSFET technology for very fast switching speed<\/li>\n
  • ESD protection up to 2 kV (HBM)<\/li>\n
  • AEC-Q101 qualified for automotive applications<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Relay and solenoid driver circuits<\/li>\n
    • High-speed line driver interfaces<\/li>\n
    • High-side load switch for battery-powered devices<\/li>\n
    • General-purpose switching and logic-level power control<\/li>\n
    • Battery load disconnect and power gating<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The NX3008PBKS is a 30V, 200mA dual P-channel Trench MOSFET manufactured by Nexperia in a SOT363 (SC-88) plastic package. Designed using Trench MOSFET technology for very fast switching and low threshold voltage, this dual device integrates two independent P-channel MOSFETs, making it ideal for relay driving, high-speed line driving, high-side load switching, and […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[2252],"chip_brand":[140],"class_list":["post-10928","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-nx3008pbks","chip_brand-nexperia"],"acf":{"brief_explanation":"30V 200mA dual P-channel Trench MOSFET, RDS(ON)=2.8R, SOT363 (SC-88)","date_code":"","package_case":"SOT363 (SC-88) - 2.9 x 1.5 x 1.0 mm","in_stock":13067,"datasheet":"https:\/\/www.nexperia.com\/product\/NX3008PBKS","price":"\/tmp\/tmpennd28fo.sh.06 @ 1ku","product_introduction":"The NX3008PBKS from Nexperia is a dual P-channel enhancement-mode Trench MOSFET in a SOT363 (SC-88) package, rated at 30V and 200mA per transistor. Using Trench MOSFET technology, the device achieves a low RDS(ON) of 2.8 Ohms typical at VGS=-4.5V and features a low threshold voltage of -0.9V typical, enabling operation from low-voltage gate drive signals. The dual configuration with two independent P-channel MOSFETs in a single package reduces component count and board space. AEC-Q101 qualification ensures reliability for automotive and industrial applications, while the 2 kV HBM ESD rating provides handling robustness.","working_principle":"The NX3008PBKS integrates two independent P-channel enhancement-mode MOSFETs using Trench technology. Each MOSFET has a gate, source, and drain terminal accessible at the package pins. When the gate-to-source voltage (VGS) is more negative than the threshold voltage (approximately -0.9V), the P-channel MOSFET turns on, creating a low-resistance conductive channel between source and drain with RDS(ON) as low as 2.8 Ohms. The Trench gate structure provides higher channel density and lower on-resistance compared to planar MOSFET technology. The dual configuration allows the two MOSFETs to be used independently, for example as separate load switches or in push-pull configurations. The body diode inherent in the MOSFET structure provides a path for inductive kickback currents in relay and motor driving applications.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>\n
      1<\/td>S1<\/td>Source<\/td>Source of transistor 1<\/td><\/tr>\n
      2<\/td>G1<\/td>Gate<\/td>Gate of transistor 1<\/td><\/tr>\n
      3<\/td>D2<\/td>Drain<\/td>Drain of transistor 2<\/td><\/tr>\n
      4<\/td>S2<\/td>Source<\/td>Source of transistor 2<\/td><\/tr>\n
      5<\/td>G2<\/td>Gate<\/td>Gate of transistor 2<\/td><\/tr>\n
      6<\/td>D1<\/td>Drain<\/td>Drain of transistor 1<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • Dual high-side load switch for battery-powered IoT devices with independent control<\/li>\n
      • Relay and solenoid driver with body diode freewheeling path<\/li>\n
      • H-bridge motor driver half-bridge configurations using two dual packages<\/li>\n
      • Logic-level power gating for MCU peripheral power domains<\/li>\n
      • Audio signal muting and source selection switches in portable devices<\/li>\n<\/ul>","alternative_models":"\n
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>\n
        Nexperia<\/td>NX3008PBKMB<\/td>DFN1006B-3<\/td>Single P-ch, 30V 300mA, ultra-thin<\/td><\/tr>\n
        Nexperia<\/td>BSS84<\/td>SOT-23<\/td>Single P-ch, -50V -130mA<\/td><\/tr>\n
        onsemi<\/td>NTJD5123P<\/td>SC-88<\/td>Dual P-ch, 20V 0.65A<\/td><\/tr>\n
        TI<\/td>CSD25310Q2<\/td>SON-6<\/td>Single P-ch, 20V, low RDS(ON)<\/td><\/tr>\n
        Diodes Inc<\/td>DMP3013SFG<\/td>SOT-363<\/td>Dual P-ch, 20V 1.5A<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/10928","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/comments?post=10928"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/10928\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/media?parent=10928"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/categories?post=10928"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/tags?post=10928"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/chip_brand?post=10928"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}