{"id":11051,"date":"2026-07-23T03:29:01","date_gmt":"2026-07-23T03:29:01","guid":{"rendered":"https:\/\/ic-vendor.com\/k4b4g1646e-bcma\/"},"modified":"2026-07-23T03:29:01","modified_gmt":"2026-07-23T03:29:01","slug":"k4b4g1646e-bcma","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/es\/k4b4g1646e-bcma\/","title":{"rendered":"K4B4G1646E-BCMA"},"content":{"rendered":"

Productos<\/h2>\n

The K4B4G1646E-BCMA from Samsung is a 4Gb DDR3 SDRAM organized as 256Mx16, operating at 1.5V with data rates up to DDR3-1600 in a 96-ball FBGA package.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
Tipo<\/td>\nDDR3 SDRAM<\/td>\n<\/tr>\n
Densidad<\/td>\n4Gb (512MB)<\/td>\n<\/tr>\n
Organization<\/td>\n256M x 16<\/td>\n<\/tr>\n
Tensi\u00f3n de alimentaci\u00f3n<\/td>\n1.5V (1.425-1.575V)<\/td>\n<\/tr>\n
Velocidad de datos<\/td>\nUp to DDR3-1600<\/td>\n<\/tr>\n
Banks<\/td>\n8<\/td>\n<\/tr>\n
Burst Length<\/td>\n8<\/td>\n<\/tr>\n
Refresh<\/td>\n8192\/64ms<\/td>\n<\/tr>\n
Temp<\/td>\n0 to 85C (Commercial)<\/td>\n<\/tr>\n
Paquete<\/td>\n96-FBGA (14x8mm)<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • 4Gb density organized as 256Mx16<\/li>\n
  • 1.5V low-power DDR3 operation<\/li>\n
  • 8 internal banks for concurrent access<\/li>\n
  • On-die termination (ODT)<\/li>\n
  • ZQ calibration for signal integrity<\/li>\n
  • Programmable CAS latency<\/li>\n
  • Self-refresh with auto-refresh<\/li>\n
  • 8n-bit prefetch architecture<\/li>\n
  • 96-ball FBGA RoHS package<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Desktop and laptop memory modules<\/li>\n
    • Embedded system main memory<\/li>\n
    • Graphics frame buffer<\/li>\n
    • Networking buffer memory<\/li>\n
    • Server and workstation memory<\/li>\n
    • Consumer electronics RAM<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The K4B4G1646E-BCMA from Samsung is a 4Gb DDR3 SDRAM organized as 256Mx16, operating at 1.5V with data rates up to DDR3-1600 in a 96-ball FBGA package. Key Specifications Type DDR3 SDRAM Density 4Gb (512MB) Organization 256M x 16 Supply Voltage 1.5V (1.425-1.575V) Data Rate Up to DDR3-1600 Banks 8 Burst Length 8 Refresh […]<\/p>\n","protected":false},"author":2,"featured_media":11102,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[2374],"chip_brand":[162],"class_list":["post-11051","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-integrated-circuits-ics","tag-k4b4g1646e-bcma","chip_brand-samsung"],"acf":{"brief_explanation":"4Gb DDR3 SDRAM, 256Mx16, 1.5V, 96-ball FBGA","date_code":"","package_case":"96-FBGA (14x8mm)","in_stock":5874,"datasheet":"https:\/\/www.samsung.com\/semiconductor\/dram\/ddr3\/","price":"$4.50 @ 1pc","product_introduction":"The K4B4G1646E-BCMA from Samsung is a 4Gb DDR3 SDRAM organized as 256Mx16. Operating at 1.5V with data rates up to DDR3-1600, it provides high-bandwidth memory for computing and embedded applications. The x16 organization is ideal for 32-bit and 64-bit memory subsystems.","working_principle":"DDR3 SDRAM uses double-data-rate architecture transferring data on both clock edges. The 8n-bit prefetch reads 8 data words per access. Internal banks allow concurrent operation. ODT eliminates external termination resistors. ZQ calibration maintains signal integrity. Self-refresh mode retains data during system sleep with minimal power.","pin_description":"
      Pin Group<\/th>Function<\/th><\/tr>
      A[15:0]<\/td>Address inputs<\/td><\/tr>
      DQ[15:0]<\/td>Data bus<\/td><\/tr>
      DM\/UDM\/LDM<\/td>Data mask<\/td><\/tr>
      CLK\/CLK#<\/td>Differential clock<\/td><\/tr>
      CS#\/RAS#\/CAS#\/WE#<\/td>Command inputs<\/td><\/tr>
      ODT<\/td>On-die termination<\/td><\/tr>
      VDD\/VDDQ<\/td>1.5V supply<\/td><\/tr><\/table>","application_scenarios":"
      • Desktop\/laptop memory modules<\/li>
      • Embedded system main memory<\/li>
      • Graphics frame buffer<\/li>
      • Networking equipment<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Notes<\/th><\/tr>
        Micron<\/td>MT41K256M16TW<\/td>4Gb x16 DDR3<\/td><\/tr>
        SK Hynix<\/td>H5TC4G63MFR<\/td>4Gb x16 DDR3<\/td><\/tr>
        Samsung<\/td>K4B4G1646D<\/td>Previous revision<\/td><\/tr>
        Nanya<\/td>NT5CC256M16DP<\/td>4Gb x16 DDR3<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/11051","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/comments?post=11051"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/11051\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/media\/11102"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/media?parent=11051"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/categories?post=11051"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/tags?post=11051"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/chip_brand?post=11051"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}