{"id":12337,"date":"2026-07-28T03:24:30","date_gmt":"2026-07-28T03:24:30","guid":{"rendered":"https:\/\/ic-vendor.com\/k4b4g1646e-bcnb000\/"},"modified":"2026-07-28T03:24:30","modified_gmt":"2026-07-28T03:24:30","slug":"k4b4g1646e-bcnb000","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/es\/k4b4g1646e-bcnb000\/","title":{"rendered":"K4B4G1646E-BCNB000"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The K4B4G1646E-BCNB000 is a 4Gbit (256M x 16) DDR4 SDRAM from Samsung operating at 1.2V with up to 2666 MT\/s data rate (CL19). It features 4 bank groups, BL8\/BC4 on-the-fly, and on-die termination, providing reliable DDR4 memory for embedded and computing applications.<\/p>\n<h2>Especificaciones<\/h2>\n<table>\n<tr>\n<td>Densidad<\/td>\n<td>4Gbit (256M x 16)<\/td>\n<\/tr>\n<tr>\n<td>Standard<\/td>\n<td>DDR4 SDRAM<\/td>\n<\/tr>\n<tr>\n<td>Velocidad de datos<\/td>\n<td>Up to 2666 MT\/s<\/td>\n<\/tr>\n<tr>\n<td>Tensi\u00f3n de alimentaci\u00f3n<\/td>\n<td>1.2V<\/td>\n<\/tr>\n<tr>\n<td>Latencia CAS<\/td>\n<td>CL19 @ 2666 MT\/s<\/td>\n<\/tr>\n<tr>\n<td>Banks<\/td>\n<td>4 BG x 4 = 16<\/td>\n<\/tr>\n<tr>\n<td>Paquete<\/td>\n<td>FBGA<\/td>\n<\/tr>\n<tr>\n<td>Estado de las piezas<\/td>\n<td>Activo<\/td>\n<\/tr>\n<\/table>\n<h2>Caracter\u00edsticas<\/h2>\n<ul>\n<li>4Gbit DDR4 SDRAM with x16 organization<\/li>\n<li>DDR4-2666 data rate (CL19)<\/li>\n<li>1.2V operation<\/li>\n<li>4 bank groups with 16 banks<\/li>\n<li>BL8\/BC4 on-the-fly<\/li>\n<li>ODT, write leveling, DBI<\/li>\n<\/ul>\n<h2>Aplicaciones<\/h2>\n<ul>\n<li>Embedded DDR4 subsystems<\/li>\n<li>Computing and networking<\/li>\n<li>Consumer electronics<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The K4B4G1646E-BCNB000 is a 4Gbit (256M x 16) DDR4 SDRAM from Samsung operating at 1.2V with up to 2666 MT\/s data rate (CL19). It features 4 bank groups, BL8\/BC4 on-the-fly, and on-die termination, providing reliable DDR4 memory for embedded and computing applications. Key Specifications Density 4Gbit (256M x 16) Standard DDR4 SDRAM Data [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[3332],"chip_brand":[162],"class_list":["post-12337","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","tag-k4b4g1646e-bcnb000","chip_brand-samsung"],"acf":{"brief_explanation":"4Gb DDR4-2666 SDRAM, 256Mx16, 1.2V, CL19, 4-bank-group, FBGA","date_code":"","package_case":"FBGA","in_stock":6234,"datasheet":"https:\/\/www.samsung.com\/semiconductor\/dram\/ddr4\/","price":"","product_introduction":"The K4B4G1646E-BCNB000 is a 4Gbit DDR4 SDRAM from Samsung organized as 256M x 16 bits, operating at 1.2V with data rates up to 2666 MT\/s (DDR4-2666, CL19). It features 4 bank groups with 16 banks, BL8\/BC4 on-the-fly, and on-die termination for reliable DDR4 memory operation in embedded and computing applications.","working_principle":"DDR4 SDRAM per JEDEC JESD79-4. Double data rate transfer on both DQS edges. Bank group pipelining increases effective bandwidth. Write leveling compensates for clock-to-DQS skew at high speeds. ODT reduces signal reflections on the bus.","pin_description":"<table><tr><th>Pin Group<\/th><th>Interface<\/th><th>Function<\/th><\/tr><tr><td>Address\/Bank\/BG<\/td><td>Input<\/td><td>Address, bank, bank group<\/td><\/tr><tr><td>DQ0-DQ15<\/td><td>I\/O<\/td><td>16-bit data bus<\/td><\/tr><tr><td>DQS\/ODT\/Cmd<\/td><td>Mixed<\/td><td>Strobe, termination, command<\/td><\/tr><\/table>","application_scenarios":"<ul><li>Embedded SoC DDR4 memory<\/li><li>Networking ASIC buffer<\/li><li>Consumer electronics main memory<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>Samsung<\/td><td>K4A4G165WG-BCWE<\/td><td>FBGA<\/td><td>3200 MT\/s faster variant<\/td><\/tr><tr><td>Micron<\/td><td>MT40A4G16TW-16E<\/td><td>FBGA<\/td><td>4Gb DDR4 x16 alternative<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/12337","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/comments?post=12337"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/12337\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/media?parent=12337"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/categories?post=12337"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/tags?post=12337"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/chip_brand?post=12337"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}