{"id":12355,"date":"2026-07-28T03:41:03","date_gmt":"2026-07-28T03:41:03","guid":{"rendered":"https:\/\/ic-vendor.com\/is61wv51216edbll-10tli\/"},"modified":"2026-07-28T03:41:03","modified_gmt":"2026-07-28T03:41:03","slug":"is61wv51216edbll-10tli","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/es\/is61wv51216edbll-10tli\/","title":{"rendered":"IS61WV51216EDBLL-10TLI"},"content":{"rendered":"

Productos<\/h2>\n

The IS61WV51216EDBLL-10TLI is an 8Mbit (512K x 16-bit) high-speed low-power asynchronous SRAM from ISSI operating at 2.2V to 3.6V with 10 ns access time and industrial temperature grade (-40\u00b0C to +85\u00b0C). The EDBLL variant features byte control (LB#, UB#) and ECC data protection, making it one of the highest-performance ultra-low-power SRAMs available.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
Densidad<\/td>\n8Mbit (512K x 16)<\/td>\n<\/tr>\n
Tensi\u00f3n de alimentaci\u00f3n<\/td>\n2.2V to 3.6V<\/td>\n<\/tr>\n
Access Time<\/td>\n10 ns<\/td>\n<\/tr>\n
Interface<\/td>\nParallel asynchronous<\/td>\n<\/tr>\n
Byte Control<\/td>\nLB#, UB#<\/td>\n<\/tr>\n
ECC<\/td>\nOn-chip error correction<\/td>\n<\/tr>\n
Operating Current<\/td>\n~70 mA typical<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-40\u00b0C to +85\u00b0C<\/td>\n<\/tr>\n
Paquete<\/td>\n44-pin TSOP II<\/td>\n<\/tr>\n
Estado de las piezas<\/td>\nActivo<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • 8Mbit (512K x 16) ultra-low-power SRAM<\/li>\n
  • 10 ns access time \u2014 highest speed in class<\/li>\n
  • 2.2V to 3.6V supply range<\/li>\n
  • On-chip ECC for data integrity<\/li>\n
  • Upper\/lower byte control (LB#, UB#)<\/li>\n
  • Industrial temperature grade<\/li>\n
  • Fully static, no refresh<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • High-performance cache memory<\/li>\n
    • Networking and telecom buffer<\/li>\n
    • DSP and FPGA external SRAM<\/li>\n
    • Graphics frame buffer<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IS61WV51216EDBLL-10TLI is an 8Mbit (512K x 16-bit) high-speed low-power asynchronous SRAM from ISSI operating at 2.2V to 3.6V with 10 ns access time and industrial temperature grade (-40\u00b0C to +85\u00b0C). The EDBLL variant features byte control (LB#, UB#) and ECC data protection, making it one of the highest-performance ultra-low-power SRAMs available. Key […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[3352],"chip_brand":[210],"class_list":["post-12355","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","tag-is61wv51216edbll-10tli","chip_brand-issi"],"acf":{"brief_explanation":"8Mb (512Kx16) ultra-low-power SRAM, 10ns, ECC, 2.2~3.6V, industrial, 44-TSOP II","date_code":"","package_case":"44-pin TSOP II","in_stock":5432,"datasheet":"https:\/\/www.issi.com\/WW\/pdf\/61WV51216EDBLL.pdf","price":"$9.50 @ 1pc","product_introduction":"The IS61WV51216EDBLL-10TLI is an 8Mbit (512K x 16-bit) ultra-low-power asynchronous SRAM from ISSI with 10 ns access time, on-chip ECC, and industrial temperature grade. The 10ns speed supports 100 MHz bus operation while the 2.2V to 3.6V supply range enables both 2.5V and 3.3V system designs. On-chip ECC provides transparent single-bit error correction for enhanced data integrity in critical applications.","working_principle":"Fully static asynchronous SRAM with 10ns access time and on-chip ECC. The ECC engine transparently corrects single-bit errors during read operations and verifies data integrity during writes, improving soft error rate (SER) performance. LB#\/UB# signals control individual byte lanes. Read: CE# low, OE# low \u2014 ECC-corrected data appears after 10ns. Write: CE# low, WE# low \u2014 data is written with ECC parity generated on-chip.","pin_description":"
      Pin Group<\/th>Interface<\/th>Function<\/th><\/tr>
      A0-A18<\/td>Input<\/td>19-bit address inputs<\/td><\/tr>
      DQ0-DQ7<\/td>I\/O<\/td>Lower byte data<\/td><\/tr>
      DQ8-DQ15<\/td>I\/O<\/td>Upper byte data<\/td><\/tr>
      CE#, OE#, WE#<\/td>Input<\/td>Control signals<\/td><\/tr>
      LB#, UB#<\/td>Input<\/td>Byte enable<\/td><\/tr><\/table>","application_scenarios":"
      • FPGA\/CPU L2 cache with ECC protection<\/li>
      • High-speed networking buffer at 100 MHz<\/li>
      • Industrial DSP external SRAM with error correction<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        ISSI<\/td>IS62WV51216HBLL-45TLI<\/td>TSOP<\/td>45ns ultra-low-power, no ECC<\/td><\/tr>
        Lyontek<\/td>LY62L51216BML-45SLI<\/td>TSOP<\/td>8Mbit 45ns alternative<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/12355","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/comments?post=12355"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/12355\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/media?parent=12355"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/categories?post=12355"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/tags?post=12355"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/chip_brand?post=12355"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}