The H57V2562GTR-75C from SK Hynix (formerly Hynix Semiconductor) is a 256Mb (32MB) Synchronous DRAM organized as 4M x 4 Banks x 16-bit, operating at 133MHz (CL3) with 3.3V supply in a 54-pin TSOP-II package. This is a legacy SDRAM device, now discontinued by the manufacturer.<\/p>\n
Product Overview The H57V2562GTR-75C from SK Hynix (formerly Hynix Semiconductor) is a 256Mb (32MB) Synchronous DRAM organized as 4M x 4 Banks x 16-bit, operating at 133MHz (CL3) with 3.3V supply in a 54-pin TSOP-II package. This is a legacy SDRAM device, now discontinued by the manufacturer. Key Specifications Density: 256Mb (32MB) Organization: 4M x […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[],"chip_brand":[290],"class_list":["post-6529","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","chip_brand-hynix"],"acf":{"brief_explanation":"256Mb SDRAM, 4Mx4Banksx16, 133MHz, CL3, 3.3V, TSOP-II-54, discontinued","date_code":"","package_case":"TSOP-II 54-pin","in_stock":900,"datasheet":"https:\/\/www.alldatasheet.com\/datasheet-pdf\/pdf\/333572\/HYNIX\/H57V2562GTR-75C.html","price":"$3.20","product_introduction":"The H57V2562GTR-75C from SK Hynix is a 256Mb Synchronous DRAM (SDRAM) device providing 32MB of volatile memory in a 16-bit wide data bus configuration. The -75 speed grade supports 133MHz clock frequency with CAS Latency 3, delivering up to 266MB\/s peak bandwidth. The 4-bank architecture enables bank interleaving for improved effective bandwidth in sequential access patterns. The LVTTL interface operates at 3.3V, compatible with standard 3.3V logic families. This device was widely used in embedded systems, networking equipment, and consumer electronics in the early 2000s. Note: This product has been discontinued by SK Hynix and is available only from surplus stock or aftermarket suppliers.","working_principle":"The H57V2562GTR-75C uses the standard SDRAM protocol where all operations are synchronized to the positive edge of the system clock (CLK). Memory is organized into 4 independent banks, each containing 4096 rows by 512 columns of 16-bit words. A read operation begins with an ACTIVATE command (specifying bank and row address), followed by a READ command (specifying column address) after tRCD delay. Data appears on the DQ bus after CAS Latency (3 clock cycles). A PRECHARGE command closes the row before another row can be opened in the same bank. The 4-bank architecture allows overlapping operations: while one bank is being accessed, another can be precharged, hiding the precharge latency. Auto-refresh cycles through all 8192 rows every 64ms. Self-refresh mode allows the DRAM to maintain data without external refresh commands, reducing system power during sleep modes.","pin_description":"
| Pin Group<\/th> | Name<\/th> | Function<\/th><\/tr> | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Address<\/td> | A0-A12<\/td> | Row\/column address (multiplexed)<\/td><\/tr> | ||||||||||||
| Bank Select<\/td> | BA0, BA1<\/td> | Bank selection (4 banks)<\/td><\/tr> | ||||||||||||
| Data<\/td> | DQ0-DQ15<\/td> | 16-bit bidirectional data bus<\/td><\/tr> | ||||||||||||
| Data Mask<\/td> | DQML, DQMH<\/td> | Byte-wise write masking<\/td><\/tr> | ||||||||||||
| Control<\/td> | CS, RAS, CAS, WE<\/td> | Command inputs (active low)<\/td><\/tr> | ||||||||||||
| Clock<\/td> | CLK, CKE<\/td> | System clock and clock enable<\/td><\/tr> | ||||||||||||
| Power<\/td> | VDD, VSS<\/td> | 3.3V supply and ground<\/td><\/tr><\/table>","application_scenarios":"The H57V2562GTR-75C was widely used as main memory in embedded processors with 16-bit memory interfaces. In networking equipment, it served as packet buffer memory for routers and switches. For printers and scanners, the 32MB capacity stored compressed image data during processing. The 16-bit bus width pairs naturally with 16-bit DSPs and microcontrollers. This device is now primarily sourced as a replacement part for legacy equipment maintenance, as DDR SDRAM has replaced standard SDRAM in new designs.","alternative_models":"
|