{"id":7315,"date":"2026-06-24T03:37:53","date_gmt":"2026-06-24T03:37:53","guid":{"rendered":"https:\/\/ic-vendor.com\/is61wv51216bll-10mli\/"},"modified":"2026-06-24T03:37:53","modified_gmt":"2026-06-24T03:37:53","slug":"is61wv51216bll-10mli","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/es\/is61wv51216bll-10mli\/","title":{"rendered":"IS61WV51216BLL-10MLI"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The IS61WV51216BLL-10MLI from ISSI is a 512K x 16-bit (8Mbit) high-speed asynchronous CMOS static RAM with 10ns access time in a 44-pin TSOP-II package. Operating from 3.3V with low-power standby, it is designed for high-performance memory applications.<\/p>\n<h2>Especificaciones<\/h2>\n<table>\n<tr>\n<td>Organization<\/td>\n<td>512K x 16 bits (8,388,608 bits)<\/td>\n<\/tr>\n<tr>\n<td>Access Time<\/td>\n<td>10 ns<\/td>\n<\/tr>\n<tr>\n<td>Tensi\u00f3n de alimentaci\u00f3n<\/td>\n<td>3.3 V (2.4V to 3.6V)<\/td>\n<\/tr>\n<tr>\n<td>Active Current<\/td>\n<td>115 mA typical<\/td>\n<\/tr>\n<tr>\n<td>Standby Current<\/td>\n<td>3 mA (deselected)<\/td>\n<\/tr>\n<tr>\n<td>Interface<\/td>\n<td>Asynchronous, byte-wise or word-wise<\/td>\n<\/tr>\n<tr>\n<td>Byte Control<\/td>\n<td>LB# and UB# for upper\/lower byte<\/td>\n<\/tr>\n<tr>\n<td>Temperatura de funcionamiento<\/td>\n<td>-40\u00b0C to +85\u00b0C (industrial)<\/td>\n<\/tr>\n<tr>\n<td>Paquete<\/td>\n<td>44-pin TSOP-II (18.4 x 10.1 mm)<\/td>\n<\/tr>\n<\/table>\n<h2>Caracter\u00edsticas<\/h2>\n<ul>\n<li>8Mbit (512Kx16) SRAM with 10ns fast access time for high-performance systems<\/li>\n<li>Byte-wise control via LB# and UB# enables 8-bit or 16-bit data access<\/li>\n<li>Low-power CMOS with 3mA standby current for battery backup compatibility<\/li>\n<li>3.3V single supply operation with 2.4V minimum for extended battery life<\/li>\n<li>Full static operation with no clock or refresh required<\/li>\n<\/ul>\n<h2>Aplicaciones<\/h2>\n<ul>\n<li>High-speed memory buffers and FIFO storage in networking equipment<\/li>\n<li>Cache memory and working RAM in embedded processors and DSPs<\/li>\n<li>Video frame buffer and image processing temporary storage<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The IS61WV51216BLL-10MLI from ISSI is a 512K x 16-bit (8Mbit) high-speed asynchronous CMOS static RAM with 10ns access time in a 44-pin TSOP-II package. Operating from 3.3V with low-power standby, it is designed for high-performance memory applications. Key Specifications Organization 512K x 16 bits (8,388,608 bits) Access Time 10 ns Supply Voltage 3.3 [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[],"chip_brand":[210],"class_list":["post-7315","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","chip_brand-issi"],"acf":{"brief_explanation":"512Kx16 8Mbit async SRAM, 10ns, 3.3V, LB\/UB byte control, 44-pin TSOP-II, industrial","date_code":"","package_case":"44-pin TSOP-II (18.41 x 10.11 x 1.20 mm)","in_stock":5420,"datasheet":"https:\/\/www.issi.com\/WW\/pdf\/61WV51216BLL.pdf","price":"$2.80 @ 1ku","product_introduction":"The IS61WV51216BLL-10MLI from ISSI is a very high-speed, low-power CMOS static RAM organized as 512,768 words by 16 bits. The device provides 10ns maximum access time, making it suitable for zero-wait-state operation with fast microprocessors and DSPs. The device operates from a single 3.3V supply (2.4V to 3.6V range), with active current of 115mA typical and standby current of only 3mA when deselected. Upper and lower byte enable pins (UB# and LB#) allow independent access to each byte of the 16-bit data word. The device is fully static and requires no external clocks or refresh circuitry. The -10MLI suffix indicates 10ns speed grade, TSOP-II package, and industrial temperature range (-40C to +85C).","working_principle":"The IS61WV51216BLL-10MLI is an asynchronous 6-transistor (6T) CMOS static RAM. (1) Memory Cell: Each bit is stored in a 6-transistor cross-coupled inverter latch. The two stable states represent logic 0 and 1. Unlike DRAM, the data is retained without periodic refresh as long as power is applied. (2) Read Operation: When CE# and OE# are low, the address decoders select one of 512K word lines. The selected 16 memory cells drive the bit lines, and the sense amplifiers detect the small voltage differences. The output buffers drive the data onto the I\/O pins within 10ns of address valid. (3) Write Operation: When CE# and WE# are low, the input data on the I\/O pins is driven onto the bit lines and written into the selected memory cells, overwriting the previous data. (4) Byte Control: The LB# and UB# pins independently enable the lower byte (I\/O0-7) and upper byte (I\/O8-15), allowing byte-wide or word-wide write operations.","pin_description":"<table><tr><th>Pin Group<\/th><th>Count<\/th><th>Function<\/th><\/tr><tr><td>Address (A0-A18)<\/td><td>19<\/td><td>Address inputs (512K = 2^19)<\/td><\/tr><tr><td>Data (I\/O0-I\/O15)<\/td><td>16<\/td><td>Bidirectional data bus<\/td><\/tr><tr><td>CE#<\/td><td>1<\/td><td>Chip enable (active low)<\/td><\/tr><tr><td>OE#<\/td><td>1<\/td><td>Output enable (active low)<\/td><\/tr><tr><td>WE#<\/td><td>1<\/td><td>Write enable (active low)<\/td><\/tr><tr><td>LB#<\/td><td>1<\/td><td>Lower byte enable<\/td><\/tr><tr><td>UB#<\/td><td>1<\/td><td>Upper byte enable<\/td><\/tr><tr><td>VDD\/VSS<\/td><td>4<\/td><td>3.3V power and ground<\/td><\/tr><\/table>","application_scenarios":"<ul><li>Zero-wait-state cache and working RAM for fast processors and DSPs at 10ns<\/li><li>Networking buffer memory with byte-wise control for packet processing<\/li><li>Video and image processing temporary storage at 3.3V in TSOP-II<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>ISSI<\/td><td>IS61WV51216BLL-10TLI<\/td><td>48-ball BGA<\/td><td>BGA package version<\/td><\/tr><tr><td>Cypress<\/td><td>CY62167EV30LL-55ZXI<\/td><td>48-ball BGA<\/td><td>1Mx16, 55ns, lower power<\/td><\/tr><tr><td>Alliance<\/td><td>AS7C34098A-10TIN<\/td><td>44-pin TSOP-II<\/td><td>512Kx16, pin-compatible<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/7315","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/comments?post=7315"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/posts\/7315\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/media?parent=7315"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/categories?post=7315"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/tags?post=7315"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/es\/wp-json\/wp\/v2\/chip_brand?post=7315"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}