{"id":10472,"date":"2026-07-20T04:13:23","date_gmt":"2026-07-20T04:13:23","guid":{"rendered":"https:\/\/ic-vendor.com\/bss138p\/"},"modified":"2026-07-20T04:13:23","modified_gmt":"2026-07-20T04:13:23","slug":"bss138p","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/zh\/bss138p\/","title":{"rendered":"BSS138P"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The Nexperia BSS138P is a 60V, 360mA N-channel Trench MOSFET in a SOT23 (TO-236AB) package. It features logic-level gate drive, low threshold voltage (1.2V typical), fast switching, and AEC-Q101 qualification for automotive applications.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n
Drain-Source Voltage (VDS)<\/td>\n60 V<\/td>\n<\/tr>\n
Continuous Drain Current (ID)<\/td>\n360 mA (at 25\u00b0C)<\/td>\n<\/tr>\n
On-Resistance (RDSon)<\/td>\n1.6 \u03a9 max @ VGS=10V<\/td>\n<\/tr>\n
Gate Threshold Voltage (VGSth)<\/td>\n1.2 V (typical)<\/td>\n<\/tr>\n
Total Gate Charge (Qg)<\/td>\n0.72 nC @ VGS=4.5V<\/td>\n<\/tr>\n
Input Capacitance (Ciss)<\/td>\n38 pF @ VDS=10V<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n350 mW (Ta), 1.14W (Tc)<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55\u00b0C \u81f3 +150\u00b0C<\/td>\n<\/tr>\n
\u8d44\u683c<\/td>\nAEC-Q101<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Logic-level compatible with low threshold voltage<\/li>\n
  • Very fast switching with low gate charge (0.72 nC)<\/li>\n
  • Trench MOSFET technology for low RDSon<\/li>\n
  • AEC-Q101 qualified for automotive applications<\/li>\n
  • Compact SOT23 surface-mount package<\/li>\n
  • Low input capacitance of 38 pF<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Relay driver circuits<\/li>\n
    • High-speed line drivers<\/li>\n
    • Low-side load switches<\/li>\n
    • General-purpose switching circuits<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The Nexperia BSS138P is a 60V, 360mA N-channel Trench MOSFET in a SOT23 (TO-236AB) package. It features logic-level gate drive, low threshold voltage (1.2V typical), fast switching, and AEC-Q101 qualification for automotive applications. Key Specifications Drain-Source Voltage (VDS) 60 V Continuous Drain Current (ID) 360 mA (at 25\u00b0C) On-Resistance (RDSon) 1.6 \u03a9 max […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[1778],"chip_brand":[168],"class_list":["post-10472","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-bss138p","chip_brand-nxp"],"acf":{"brief_explanation":"60V 360mA N-channel Trench MOSFET, logic-level, RDSon 1.6\u03a9, SOT23, AEC-Q101 qualified","date_code":"","package_case":"SOT23 (TO-236AB) 2.9 x 1.3 x 1.0 mm","in_stock":13472,"datasheet":"https:\/\/assets.nexperia.com\/documents\/data-sheet\/BSS138P.pdf","price":"$0.04 @ 1ku","product_introduction":"The Nexperia BSS138P is an N-channel enhancement mode Trench MOSFET housed in a compact SOT23 (TO-236AB) surface-mount plastic package. It features a maximum drain-source voltage of 60V and continuous drain current of 360mA. The device utilizes Trench MOSFET technology to achieve low on-resistance of 1.6 \u03a9 maximum at VGS=10V with logic-level gate compatibility. The low gate threshold voltage of 1.2V (typical) enables direct drive from 3.3V microcontrollers. With a total gate charge of only 0.72 nC, the device offers very fast switching performance. The BSS138P is AEC-Q101 qualified, making it suitable for automotive applications. It operates from -55\u00b0C to +150\u00b0C with power dissipation up to 350mW at ambient temperature.","working_principle":"The BSS138P operates as an N-channel enhancement mode MOSFET. When a positive voltage exceeding the threshold voltage (VGSth \u2248 1.2V) is applied between gate and source, an electric field induces a conductive channel between drain and source, allowing current to flow. The Trench MOSFET architecture uses a vertical trench gate structure that increases channel density and reduces on-resistance compared to planar designs. The low gate charge (0.72 nC) enables rapid charging and discharging of the gate capacitance, resulting in fast turn-on and turn-off times. The device operates in the linear region at low VDS and saturates at higher VDS. The body diode between source and drain provides a path for reverse current during inductive load switching. RDSon varies with VGS \u2014 at 5V gate drive, RDSon increases to approximately 2.0 \u03a9.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>\n
      1<\/td>G<\/td>Input<\/td>Gate \u2014 controls channel conductivity<\/td><\/tr>\n
      2<\/td>S<\/td>Power<\/td>Source \u2014 reference terminal for gate drive<\/td><\/tr>\n
      3<\/td>D<\/td>Power<\/td>Drain \u2014 current output terminal<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • Relay driver circuits in automotive and industrial systems<\/li>\n
      • High-speed line drivers for communication interfaces<\/li>\n
      • Low-side load switches in power management circuits<\/li>\n
      • Level shifting circuits for I2C\/SPI interfaces<\/li>\n
      • General-purpose switching in consumer electronics<\/li>\n<\/ul>","alternative_models":"\n
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>\n
        onsemi<\/td>BSS138<\/td>SOT-23<\/td>50V variant, widely compatible<\/td><\/tr>\n
        Diodes Inc<\/td>BSS138-7-F<\/td>SOT-23<\/td>Equivalent function<\/td><\/tr>\n
        Infineon<\/td>BSS138<\/td>SOT-23<\/td>Equivalent N-channel MOSFET<\/td><\/tr>\n
        Nexperia<\/td>BSS138BK<\/td>SOT-23<\/td>Higher voltage variant (60V)<\/td><\/tr>\n
        Nexperia<\/td>BSS138PS<\/td>SOT363<\/td>Dual N-channel variant<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/10472","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/comments?post=10472"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/10472\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/media?parent=10472"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/categories?post=10472"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/tags?post=10472"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=10472"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}