{"id":10473,"date":"2026-07-20T04:13:25","date_gmt":"2026-07-20T04:13:25","guid":{"rendered":"https:\/\/ic-vendor.com\/bss138ps\/"},"modified":"2026-07-20T04:13:25","modified_gmt":"2026-07-20T04:13:25","slug":"bss138ps","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/zh\/bss138ps\/","title":{"rendered":"BSS138PS"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The Nexperia BSS138PS is a dual 60V, 320mA N-channel Trench MOSFET in a compact SOT363 (SC-88) package. It features logic-level gate drive, low RDSon of 1.6 \u03a9, fast switching, and AEC-Q101 qualification, providing two independently controllable N-channel MOSFETs in a single tiny package.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
Drain-Source Voltage (VDS)<\/td>\n60 V<\/td>\n<\/tr>\n
Continuous Drain Current (ID)<\/td>\n320 mA (per channel)<\/td>\n<\/tr>\n
On-Resistance (RDSon max)<\/td>\n1.6 \u03a9 @ VGS=10V; 2.0 \u03a9 @ VGS=5V<\/td>\n<\/tr>\n
Gate Threshold Voltage (VGSth)<\/td>\n1.2 V (typical)<\/td>\n<\/tr>\n
Total Gate Charge (Qg)<\/td>\n0.72 nC @ VGS=4.5V<\/td>\n<\/tr>\n
Input Capacitance (Ciss)<\/td>\n38 pF<\/td>\n<\/tr>\n
Number of Transistors<\/td>\n2 (dual N-channel)<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n0.28 W (total)<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55\u00b0C \u81f3 +150\u00b0C<\/td>\n<\/tr>\n
\u8d44\u683c<\/td>\nAEC-Q101<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Dual N-channel MOSFET in ultra-small SOT363 package<\/li>\n
  • Logic-level compatible with low threshold voltage<\/li>\n
  • Very fast switching with 0.72 nC total gate charge<\/li>\n
  • Trench MOSFET technology for low RDSon<\/li>\n
  • AEC-Q101 qualified for automotive applications<\/li>\n
  • Two independent transistors for compact design<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Dual relay driver circuits<\/li>\n
    • High-speed differential line drivers<\/li>\n
    • Dual low-side load switches<\/li>\n
    • Push-pull switching circuits<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The Nexperia BSS138PS is a dual 60V, 320mA N-channel Trench MOSFET in a compact SOT363 (SC-88) package. It features logic-level gate drive, low RDSon of 1.6 \u03a9, fast switching, and AEC-Q101 qualification, providing two independently controllable N-channel MOSFETs in a single tiny package. Key Specifications Drain-Source Voltage (VDS) 60 V Continuous Drain Current […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[1779],"chip_brand":[168],"class_list":["post-10473","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-bss138ps","chip_brand-nxp"],"acf":{"brief_explanation":"Dual 60V 320mA N-channel Trench MOSFET, logic-level, SOT363, AEC-Q101, RDSon 1.6\u03a9, 0.72nC Qg","date_code":"","package_case":"SOT363 (SC-88) 2.1 x 2.0 x 0.95 mm, 6 leads","in_stock":5834,"datasheet":"https:\/\/assets.nexperia.com\/documents\/data-sheet\/BSS138PS.pdf","price":"$0.06 @ 1ku","product_introduction":"The Nexperia BSS138PS is a dual N-channel enhancement mode Trench MOSFET housed in an ultra-compact SOT363 (SC-88) surface-mount plastic package. Each transistor features a maximum drain-source voltage of 60V and continuous drain current of 320mA. The device uses Trench MOSFET technology to achieve low on-resistance of 1.6 \u03a9 maximum at VGS=10V and 2.0 \u03a9 at VGS=5V, enabling logic-level gate drive compatibility. With a total gate charge of only 0.72 nC, both transistors offer very fast switching performance. The dual configuration provides two independently controllable N-channel MOSFETs in a single 6-lead package, ideal for space-constrained applications. The BSS138PS is AEC-Q101 qualified and operates from -55\u00b0C to +150\u00b0C.","working_principle":"The BSS138PS integrates two independent N-channel enhancement mode Trench MOSFETs in a single SOT363 package. Each transistor operates identically to a single BSS138P: applying a positive gate-source voltage above the threshold (\u22481.2V) creates a conductive channel between drain and source. The Trench MOSFET architecture provides high channel density and low RDSon. The two transistors share a common source pin (pin 2), while each has independent gate (pins 1 and 5) and drain (pins 6 and 3) connections. This configuration is particularly useful for push-pull circuits, differential pair drivers, or dual independent load switches. The low gate charge (0.72 nC per transistor) ensures minimal switching losses at high frequencies. The body diodes provide reverse current paths for inductive loads.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>\n
      1<\/td>G1<\/td>Input<\/td>Gate of transistor 1<\/td><\/tr>\n
      2<\/td>S1\/S2<\/td>Power<\/td>Common source (both transistors)<\/td><\/tr>\n
      3<\/td>D2<\/td>Power<\/td>Drain of transistor 2<\/td><\/tr>\n
      4<\/td>S1\/S2<\/td>Power<\/td>Common source (both transistors)<\/td><\/tr>\n
      5<\/td>G2<\/td>Input<\/td>Gate of transistor 2<\/td><\/tr>\n
      6<\/td>D1<\/td>Power<\/td>Drain of transistor 1<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • Dual relay driver circuits in automotive modules<\/li>\n
      • High-speed differential line drivers for communication<\/li>\n
      • Dual low-side load switches in power management<\/li>\n
      • Push-pull switching circuits for motor control<\/li>\n
      • Level shifting for I2C\/SPI bus interfaces<\/li>\n<\/ul>","alternative_models":"\n
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>\n
        onsemi<\/td>NTJD4001NT1G<\/td>SOT-363<\/td>Dual N-channel, similar specs<\/td><\/tr>\n
        Diodes Inc<\/td>BSS138PS-7<\/td>SOT-363<\/td>Direct equivalent<\/td><\/tr>\n
        Toshiba<\/td>SSM3K333R<\/td>SOT-363<\/td>Dual N-channel MOSFET<\/td><\/tr>\n
        Nexperia<\/td>BSS138P<\/td>SOT23<\/td>Single transistor variant<\/td><\/tr>\n
        Nexperia<\/td>BSS138BKW<\/td>SOT323<\/td>Single transistor, smaller package<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/10473","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/comments?post=10473"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/10473\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/media?parent=10473"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/categories?post=10473"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/tags?post=10473"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=10473"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}