{"id":10817,"date":"2026-07-20T14:00:36","date_gmt":"2026-07-20T14:00:36","guid":{"rendered":"https:\/\/ic-vendor.com\/sir862dp-t1-ge3\/"},"modified":"2026-07-20T14:00:36","modified_gmt":"2026-07-20T14:00:36","slug":"sir862dp-t1-ge3","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/zh\/sir862dp-t1-ge3\/","title":{"rendered":"SIR862DP-T1-GE3"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The SIR862DP-T1-GE3 from Vishay Siliconix is a 25 V N-Channel TrenchFET power MOSFET in a PowerPAK SO-8 surface-mount package. Featuring an ultra-low RDS(on) of 2.8 mOhm at 10 V gate drive, 50 A continuous drain current, and 60 nC total gate charge, it is optimized for high-efficiency DC-DC conversion, synchronous rectification, and POL applications.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
VDS<\/td>\n25 V<\/td>\n<\/tr>\n
ID (Continuous)<\/td>\n50 A (Tc=25 degC)<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n2.8 mOhm @ VGS=10V<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n3.5 mOhm @ VGS=4.5V<\/td>\n<\/tr>\n
VGS(th)<\/td>\n1.2 V (min)<\/td>\n<\/tr>\n
Qg (Typical)<\/td>\n60 nC @ VGS=10V<\/td>\n<\/tr>\n
Qg (Typical)<\/td>\n28.4 nC @ VGS=4.5V<\/td>\n<\/tr>\n
\u897f\u65af<\/td>\n3800 pF @ VDS=10V<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n69 W (Tc=25 degC)<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nPowerPAK SO-8<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55 to +150 degC<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Ultra-low RDS(on) of 2.8 mOhm for minimum conduction loss<\/li>\n
  • TrenchFET technology for high efficiency<\/li>\n
  • 100% Rg and UIS tested for reliability<\/li>\n
  • Low gate charge for fast switching<\/li>\n
  • PowerPAK SO-8 with exposed pad for thermal management<\/li>\n
  • Halogen-free and RoHS compliant<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • DC-DC converter synchronous rectification<\/li>\n
    • Point-of-load (POL) converters<\/li>\n
    • Server and VRM power stages<\/li>\n
    • Battery management system switching<\/li>\n
    • Motor drive low-side switches<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The SIR862DP-T1-GE3 from Vishay Siliconix is a 25 V N-Channel TrenchFET power MOSFET in a PowerPAK SO-8 surface-mount package. Featuring an ultra-low RDS(on) of 2.8 mOhm at 10 V gate drive, 50 A continuous drain current, and 60 nC total gate charge, it is optimized for high-efficiency DC-DC conversion, synchronous rectification, and POL […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[2158],"chip_brand":[136],"class_list":["post-10817","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-sir862dp-t1-ge3","chip_brand-vishay"],"acf":{"brief_explanation":"25V 50A N-Channel MOSFET, 2.8 mOhm RDS(on), PowerPAK SO-8, 60 nC Qg, TrenchFET","date_code":"","package_case":"PowerPAK SO-8 (5.99 x 5.0 x 1.12 mm)","in_stock":12248,"datasheet":"https:\/\/www.vishay.com\/docs\/65253\/sir862dp.pdf","price":"$0.634 @ 3ku","product_introduction":"The SIR862DP-T1-GE3 from Vishay Siliconix is a 25 V N-Channel TrenchFET power MOSFET in a PowerPAK SO-8 package. With an ultra-low RDS(on) of 2.8 mOhm at 10 V gate drive and 50 A continuous drain current, it is optimized for high-efficiency synchronous rectification and DC-DC conversion. The low gate charge of 28.4 nC at 4.5 V enables fast switching with minimal drive loss. The PowerPAK SO-8 package with exposed thermal pad provides excellent thermal performance with 69 W power dissipation capability. 100% Rg and UIS tested for reliability assurance.","working_principle":"The SIR862DP operates as a voltage-controlled switch using TrenchFET technology. The trench gate structure provides high cell density, resulting in ultra-low RDS(on) of 2.8 mOhm. When VGS exceeds the threshold (1.2 V min), an inversion layer forms in the P-body, creating a conductive N-channel. The low RDS(on) minimizes conduction losses (P = I2 x RDS(on)), critical for high-current DC-DC converters where even milliohms of resistance cause significant power dissipation. The 60 nC gate charge at 10 V represents the total charge that must be supplied to the gate for each switching cycle, determining the drive power requirement and switching speed.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1,2,3<\/td>S<\/td>Source<\/td>Source terminals<\/td><\/tr>
      4<\/td>G<\/td>Gate<\/td>Gate control input<\/td><\/tr>
      5,6,7,8<\/td>D<\/td>Drain<\/td>Drain terminals (thermal pad)<\/td><\/tr><\/table>","application_scenarios":"
      • Server VRM synchronous rectification MOSFET<\/li>
      • DC-DC buck converter low-side switch<\/li>
      • Point-of-load converter power stage<\/li>
      • Battery management system charge FET<\/li>
      • Motor drive low-side switching element<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        ONsemi<\/td>FDMS86180ET100<\/td>Power56<\/td>25V 2.4 mOhm alternative<\/td><\/tr>
        Infineon<\/td>BSB093N15NS5<\/td>SuperSO8<\/td>25V 3.1 mOhm alternative<\/td><\/tr>
        TI<\/td>CSD16406Q3<\/td>SON3x3<\/td>25V 3.4 mOhm alternative<\/td><\/tr>
        Vishay<\/td>SIR662DP-T1-GE3<\/td>PowerPAK SO-8<\/td>60V higher voltage variant<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/10817","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/comments?post=10817"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/10817\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/media?parent=10817"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/categories?post=10817"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/tags?post=10817"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=10817"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}