{"id":11037,"date":"2026-07-23T03:28:50","date_gmt":"2026-07-23T03:28:50","guid":{"rendered":"https:\/\/ic-vendor.com\/m12l128168a-6tg2t\/"},"modified":"2026-07-23T03:28:50","modified_gmt":"2026-07-23T03:28:50","slug":"m12l128168a-6tg2t","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/zh\/m12l128168a-6tg2t\/","title":{"rendered":"M12L128168A-6TG2T"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The M12L128168A-6TG2T from ESMT (Elite Semiconductor Memory Technology) is a 128MB DDR3 SDRAM organized as 16Mx8, operating at 1.5V with data rates up to 800MHz in TSOPII-66 package.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
\u7c7b\u578b<\/td>\nDDR3 SDRAM<\/td>\n<\/tr>\n
Density<\/td>\n128MB (1Gb)<\/td>\n<\/tr>\n
Organization<\/td>\n16M x 8<\/td>\n<\/tr>\n
\u7535\u6e90\u7535\u538b<\/td>\n1.5V (1.425-1.575V)<\/td>\n<\/tr>\n
Clock Rate<\/td>\nUp to 800MHz (DDR3-1600)<\/td>\n<\/tr>\n
\u6570\u636e\u901f\u7387<\/td>\n1600 Mbps per pin<\/td>\n<\/tr>\n
Banks<\/td>\n8<\/td>\n<\/tr>\n
Burst Length<\/td>\n8<\/td>\n<\/tr>\n
Temp<\/td>\n0 to 85C (C grade)<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nTSOPII-66<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • 1Gb DDR3 SDRAM density<\/li>\n
  • 1.5V low-power operation<\/li>\n
  • 8 internal banks for concurrent operation<\/li>\n
  • Programmable CAS latency<\/li>\n
  • On-die termination (ODT)<\/li>\n
  • Self-refresh with auto-refresh<\/li>\n
  • ZQ calibration for impedance matching<\/li>\n
  • 8n-bit prefetch architecture<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Desktop and laptop memory modules<\/li>\n
    • Embedded system main memory<\/li>\n
    • Graphics frame buffer<\/li>\n
    • Networking buffer memory<\/li>\n
    • Consumer electronics memory<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The M12L128168A-6TG2T from ESMT (Elite Semiconductor Memory Technology) is a 128MB DDR3 SDRAM organized as 16Mx8, operating at 1.5V with data rates up to 800MHz in TSOPII-66 package. Key Specifications Type DDR3 SDRAM Density 128MB (1Gb) Organization 16M x 8 Supply Voltage 1.5V (1.425-1.575V) Clock Rate Up to 800MHz (DDR3-1600) Data Rate 1600 […]<\/p>\n","protected":false},"author":2,"featured_media":11112,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[2360],"chip_brand":[330],"class_list":["post-11037","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-integrated-circuits-ics","tag-m12l128168a-6tg2t","chip_brand-esmt"],"acf":{"brief_explanation":"128MB DDR3 SDRAM, 16Mx8, 1.5V, 800MHz, TSOPII-66","date_code":"","package_case":"TSOPII-66 (11.0x8.0mm)","in_stock":6509,"datasheet":"https:\/\/www.esmt.com.tw\/upload\/pdf\/DDR3\/M12L128168A.pdf","price":"$1.20 @ 1pc","product_introduction":"The M12L128168A-6TG2T from ESMT is a 128MB DDR3 SDRAM organized as 16Mx8. Operating at 1.5V with data rates up to DDR3-1600, it provides high-bandwidth memory for embedded and consumer applications. The TSOPII-66 package is compatible with standard DDR3 module designs.","working_principle":"DDR3 SDRAM uses a double-data-rate architecture transferring data on both rising and falling clock edges. The 8n-bit prefetch reads 8 data words per access, doubling the prefetch over DDR2. Internal banks allow concurrent operation for improved bandwidth. ODT eliminates external termination resistors. ZQ calibration maintains signal integrity over temperature and voltage variations.","pin_description":"
      Pin Group<\/th>Function<\/th><\/tr>
      A[15:0]<\/td>Address inputs (row\/column\/bank)<\/td><\/tr>
      DQ[7:0]<\/td>Data bus<\/td><\/tr>
      DM<\/td>Data mask<\/td><\/tr>
      CLK\/CLK#<\/td>Differential clock<\/td><\/tr>
      CS#, RAS#, CAS#, WE#<\/td>Command inputs<\/td><\/tr>
      ODT<\/td>On-die termination control<\/td><\/tr>
      VDD\/VDDQ<\/td>1.5V core and I\/O supply<\/td><\/tr><\/table>","application_scenarios":"
      • Desktop\/laptop memory<\/li>
      • Embedded system main memory<\/li>
      • Graphics frame buffer<\/li>
      • Networking buffer memory<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Notes<\/th><\/tr>
        ESMT<\/td>M12L256168A<\/td>256MB upgrade<\/td><\/tr>
        Samsung<\/td>K4B1G0446F<\/td>128MB x4 DDR3<\/td><\/tr>
        Micron<\/td>MT41K64M16<\/td>1Gb x16 DDR3<\/td><\/tr>
        Winbond<\/td>W6314GG6KB<\/td>1Gb DDR3 alternative<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/11037","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/comments?post=11037"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/11037\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/media\/11112"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/media?parent=11037"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/categories?post=11037"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/tags?post=11037"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=11037"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}