{"id":11197,"date":"2026-07-25T03:08:36","date_gmt":"2026-07-25T03:08:36","guid":{"rendered":"https:\/\/ic-vendor.com\/pv88m95v4\/"},"modified":"2026-07-25T03:08:36","modified_gmt":"2026-07-25T03:08:36","slug":"pv88m95v4","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/zh\/pv88m95v4\/","title":{"rendered":"PV88M95V4"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The Vishay Siliconix PV88M95V4 is an N-channel 80V TrenchFET power MOSFET with very low on-resistance, optimized for high-efficiency DC-DC conversion and synchronous rectification in a compact surface-mount package.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n
VDS<\/td>\n80 V<\/td>\n<\/tr>\n
VGS<\/td>\n\u00b120 V<\/td>\n<\/tr>\n
\u8eab\u4efd\u8bc1\uff08\u8fde\u7eed\uff09<\/td>\n~95 A (TC=25\u00b0C)<\/td>\n<\/tr>\n
RDS(on) Max @ VGS=10V<\/td>\n~6.5 m\u03a9<\/td>\n<\/tr>\n
RDS(on) Max @ VGS=4.5V<\/td>\n~8.0 m\u03a9<\/td>\n<\/tr>\n
Qg (typ)<\/td>\n~70 nC<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n~2.5 W (TA=25\u00b0C)<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55\u00b0C \u81f3 +150\u00b0C<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nPowerPAK SO-8 (5.15×6.15mm)<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • TrenchFET Gen IV power MOSFET technology<\/li>\n
  • Very low RDS(on) \u00d7 Qg FOM<\/li>\n
  • 100% Rg and UIS tested<\/li>\n
  • Optimized for synchronous rectification<\/li>\n
  • Halogen-free, RoHS compliant<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • DC-DC converter synchronous rectification<\/li>\n
    • Primary side switching in POL converters<\/li>\n
    • OR-ing and hot-swap power routing<\/li>\n
    • Motor drive and battery management<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The Vishay Siliconix PV88M95V4 is an N-channel 80V TrenchFET power MOSFET with very low on-resistance, optimized for high-efficiency DC-DC conversion and synchronous rectification in a compact surface-mount package. Key Specifications VDS 80 V VGS \u00b120 V ID (continuous) ~95 A (TC=25\u00b0C) RDS(on) Max @ VGS=10V ~6.5 m\u03a9 RDS(on) Max @ VGS=4.5V ~8.0 m\u03a9 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[2471],"chip_brand":[136],"class_list":["post-11197","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-pv88m95v4","chip_brand-vishay"],"acf":{"brief_explanation":"N-ch 80V 95A MOSFET, 6.5mOhm Rdson, PowerPAK SO-8, TrenchFET Gen4, -55 to 150C","date_code":"","package_case":"PowerPAK SO-8 (5.15x6.15x1.1mm)","in_stock":6789,"datasheet":"https:\/\/www.vishay.com\/docs\/63031\/sir880bdp.pdf","price":"","product_introduction":"The PV88M95V4 from Vishay Siliconix is an 80V N-channel TrenchFET Gen IV power MOSFET in a PowerPAK SO-8 surface-mount package. With approximately 6.5m\u03a9 maximum RDS(on) at VGS=10V and 95A continuous drain current capability, it is optimized for high-efficiency synchronous rectification and primary-side switching in DC-DC converters. The TrenchFET Gen IV technology provides an excellent RDS(on) \u00d7 Qg figure-of-merit for low conduction and switching losses.","working_principle":"The PV88M95V4 uses Vishay TrenchFET Gen IV technology with shielded-gate trench architecture. The vertical trench structure increases channel density while the shield electrode beneath the gate reduces gate-drain (Miller) charge for faster switching. At VGS above threshold, an inversion channel forms in the trench, allowing current flow from drain to source with very low RDS(on). The shield electrode also reduces electric field stress on the gate oxide for improved reliability.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Description<\/th><\/tr>
      1<\/td>S<\/td>Source<\/td>Source terminal<\/td><\/tr>
      2-3<\/td>S<\/td>Source<\/td>Source terminals<\/td><\/tr>
      4<\/td>G<\/td>Gate<\/td>Gate terminal<\/td><\/tr>
      5-8<\/td>D<\/td>Drain<\/td>Drain terminals (thermal pad)<\/td><\/tr><\/table>","application_scenarios":"
      • DC-DC buck converter synchronous rectifier<\/li>
      • Point-of-load (POL) primary side switch<\/li>
      • OR-ing and hot-swap power path control<\/li>
      • Motor H-bridge and battery management<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        SIR880BDP<\/td>Vishay<\/td>80V 19.5A known equivalent<\/td><\/tr>
        NTMFS4C85N<\/td>onsemi<\/td>80V 85A alternative<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/11197","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/comments?post=11197"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/11197\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/media?parent=11197"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/categories?post=11197"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/tags?post=11197"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=11197"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}