{"id":11629,"date":"2026-07-26T12:52:14","date_gmt":"2026-07-26T12:52:14","guid":{"rendered":"https:\/\/ic-vendor.com\/mr4a08bys35\/"},"modified":"2026-07-26T12:52:14","modified_gmt":"2026-07-26T12:52:14","slug":"mr4a08bys35","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/zh\/mr4a08bys35\/","title":{"rendered":"MR4A08BYS35"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The MR4A08BYS35 from Everspin is an 8Mbit (1Mx8) parallel MRAM with 35ns access time. SRAM-compatible parallel interface with unlimited write endurance – no wear-out mechanism. 20-year data retention without power. 3.3V supply. TSOP-44 package. Ideal for data logging and nonvolatile storage requiring frequent writes.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
\u7c7b\u578b<\/td>\nMagnetoresistive Random Access Memory (MRAM)<\/td>\n<\/tr>\n
Density<\/td>\n8 Mbit (1M x 8)<\/td>\n<\/tr>\n
Organization<\/td>\n1M x 8<\/td>\n<\/tr>\n
Access Time<\/td>\n35 ns<\/td>\n<\/tr>\n
Interface<\/td>\nParallel (SRAM-compatible)<\/td>\n<\/tr>\n
Endurance<\/td>\nUnlimited write cycles<\/td>\n<\/tr>\n
Data Retention<\/td>\n20 years<\/td>\n<\/tr>\n
\u7535\u6e90\u7535\u538b<\/td>\n3.3V<\/td>\n<\/tr>\n
Operating Temp<\/td>\n-40 to +85C<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nTSOP-44<\/td>\n<\/tr>\n<\/table>\n

\u5de5\u4f5c\u539f\u7406<\/h2>\n

MRAM uses the magnetoresistive effect of magnetic tunnel junction (MTJ) cells for data storage. Each cell consists of two ferromagnetic layers separated by a thin insulating tunnel barrier. Data is stored as the relative magnetic orientation (parallel=0, antiparallel=1) of the two layers. Read operation measures the resistance of the MTJ (low=parallel, high=antiparallel). Write uses spin-transfer torque (STT) to switch the magnetic orientation. Since the storage mechanism is magnetic rather than charge-based, there is no wear-out – write endurance is unlimited.<\/p>\n

\u5e94\u7528<\/h2>\n
    \n
  • Data logging<\/li>\n
  • Nonvolatile storage<\/li>\n
  • Configuration memory<\/li>\n
  • Frequent write applications<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

    Product Overview The MR4A08BYS35 from Everspin is an 8Mbit (1Mx8) parallel MRAM with 35ns access time. SRAM-compatible parallel interface with unlimited write endurance – no wear-out mechanism. 20-year data retention without power. 3.3V supply. TSOP-44 package. Ideal for data logging and nonvolatile storage requiring frequent writes. Key Specifications Type Magnetoresistive Random Access Memory (MRAM) Density […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[2905],"chip_brand":[1086],"class_list":["post-11629","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","tag-mr4a08bys35","chip_brand-everspin"],"acf":{"brief_explanation":"MR4A08BYS35 - MRAM","date_code":"","package_case":"TSOP-44 (10.1x18.4mm)","in_stock":7388,"datasheet":"https:\/\/www.everspin.com\/products\/8mb-parallel-mram-3v-35ns","price":"$25.00 @ 1ku","product_introduction":"The MR4A08BYS35 from Everspin is an 8Mbit (1Mx8) parallel MRAM with 35ns access time. SRAM-compatible parallel interface with unlimited write endurance - no wear-out mechanism. 20-year data retention without power. 3.3V supply. TSOP-44 package. Ideal for data logging and nonvolatile storage requiring frequent writes.","working_principle":"MRAM uses the magnetoresistive effect of magnetic tunnel junction (MTJ) cells for data storage. Each cell consists of two ferromagnetic layers separated by a thin insulating tunnel barrier. Data is stored as the relative magnetic orientation (parallel=0, antiparallel=1) of the two layers. Read operation measures the resistance of the MTJ (low=parallel, high=antiparallel). Write uses spin-transfer torque (STT) to switch the magnetic orientation. Since the storage mechanism is magnetic rather than charge-based, there is no wear-out - write endurance is unlimited.","pin_description":"
    Pin Group<\/th>Name<\/th>Desc<\/th><\/tr>
    A0-A19<\/td>Address<\/td>20-bit address<\/td><\/tr>
    DQ0-DQ7<\/td>Data<\/td>8-bit I\/O<\/td><\/tr>
    CE,OE,WE<\/td>Control<\/td>Enable signals<\/td><\/tr><\/table>","application_scenarios":"
    • Data logging<\/li>
    • Nonvolatile storage<\/li>
    • Configuration memory<\/li>
    • Frequent write applications<\/li><\/ul>","alternative_models":"
      Model<\/th>Vendor<\/th>Diff<\/th><\/tr>
      MR4A16BYS35<\/td>Everspin<\/td>16Mbit<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/11629","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/comments?post=11629"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/11629\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/media?parent=11629"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/categories?post=11629"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/tags?post=11629"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=11629"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}