{"id":12329,"date":"2026-07-28T03:24:18","date_gmt":"2026-07-28T03:24:18","guid":{"rendered":"https:\/\/ic-vendor.com\/ly62l51216bml-45sli\/"},"modified":"2026-07-28T03:24:18","modified_gmt":"2026-07-28T03:24:18","slug":"ly62l51216bml-45sli","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/zh\/ly62l51216bml-45sli\/","title":{"rendered":"LY62L51216BML-45SLI"},"content":{"rendered":"<h2>\u4ea7\u54c1\u6982\u89c8<\/h2>\n<p>The LY62L51216BML-45SLI is an 8Mbit (512K x 16-bit) ultra-low-power CMOS SRAM from Lyontek Inc. operating at 2.7V to 3.6V with 45 ns access time. It features upper\/lower byte control (LB#, UB#), data retention down to 1.5V, and standby current as low as 2.5 \u00b5A typical, making it ideal for battery-backed applications.<\/p>\n<h2>\u4e3b\u8981\u89c4\u683c<\/h2>\n<table>\n<tr>\n<td>Density<\/td>\n<td>8Mbit (512K x 16)<\/td>\n<\/tr>\n<tr>\n<td>\u7535\u6e90\u7535\u538b<\/td>\n<td>2.7V \u81f3 3.6V<\/td>\n<\/tr>\n<tr>\n<td>Access Time<\/td>\n<td>45 ns<\/td>\n<\/tr>\n<tr>\n<td>Interface<\/td>\n<td>Parallel asynchronous<\/td>\n<\/tr>\n<tr>\n<td>Byte Control<\/td>\n<td>LB#, UB#<\/td>\n<\/tr>\n<tr>\n<td>Operating Current<\/td>\n<td>12 mA typical<\/td>\n<\/tr>\n<tr>\n<td>Standby Current<\/td>\n<td>2.5 \u00b5A typical<\/td>\n<\/tr>\n<tr>\n<td>Data Retention<\/td>\n<td>1.5V min<\/td>\n<\/tr>\n<tr>\n<td>Operating Temp<\/td>\n<td>-40\u00b0C to +85\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>\u5305\u88c5<\/td>\n<td>44-pin TSOP II<\/td>\n<\/tr>\n<tr>\n<td>\u90e8\u4ef6\u72b6\u6001<\/td>\n<td>\u6d3b\u8dc3<\/td>\n<\/tr>\n<\/table>\n<h2>\u7279\u70b9<\/h2>\n<ul>\n<li>8Mbit (512K x 16) ultra-low-power SRAM<\/li>\n<li>45 ns access time<\/li>\n<li>Upper\/lower byte control (LB#, UB#)<\/li>\n<li>Ultra-low standby current (2.5 \u00b5A typical)<\/li>\n<li>Data retention voltage down to 1.5V<\/li>\n<li>Fully static, no refresh or clocks<\/li>\n<\/ul>\n<h2>\u5e94\u7528<\/h2>\n<ul>\n<li>Battery-backed memory systems<\/li>\n<li>Industrial and telecom SRAM<\/li>\n<li>Embedded system expansion<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The LY62L51216BML-45SLI is an 8Mbit (512K x 16-bit) ultra-low-power CMOS SRAM from Lyontek Inc. operating at 2.7V to 3.6V with 45 ns access time. It features upper\/lower byte control (LB#, UB#), data retention down to 1.5V, and standby current as low as 2.5 \u00b5A typical, making it ideal for battery-backed applications. Key Specifications [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[3323],"chip_brand":[3315],"class_list":["post-12329","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","tag-ly62l51216bml-45sli","chip_brand-lyontek"],"acf":{"brief_explanation":"8Mb (512Kx16) ultra-low-power SRAM, 2.7~3.6V, 45ns, byte ctrl, 44-TSOP II","date_code":"","package_case":"44-pin TSOP II (400mil)","in_stock":4567,"datasheet":"https:\/\/www.lyontek.com.tw\/pdf\/lp\/LY62L51216B-1.0.pdf","price":"","product_introduction":"The LY62L51216BML-45SLI is an 8Mbit (512K x 16-bit) ultra-low-power CMOS SRAM from Lyontek Inc. operating at 2.7V to 3.6V with 45 ns access time. It features byte-wise control via LB# and UB# signals, data retention down to 1.5V, and ultra-low 2.5 \u00b5A typical standby current, making it excellent for battery-backed and low-power embedded applications.","working_principle":"Fully static asynchronous SRAM with 16-bit data bus. LB# and UB# signals control individual byte lanes. Data retention at 1.5V enables battery backup operation. The internal memory array uses six-transistor CMOS cells for non-volatile-when-powered storage without refresh.","pin_description":"<table><tr><th>Pin Group<\/th><th>Interface<\/th><th>Function<\/th><\/tr><tr><td>A0-A18<\/td><td>Input<\/td><td>19-bit address inputs<\/td><\/tr><tr><td>DQ0-DQ7<\/td><td>I\/O<\/td><td>Lower byte data<\/td><\/tr><tr><td>DQ8-DQ15<\/td><td>I\/O<\/td><td>Upper byte data<\/td><\/tr><tr><td>CE#, OE#, WE#<\/td><td>Input<\/td><td>Control signals<\/td><\/tr><tr><td>LB#, UB#<\/td><td>Input<\/td><td>Byte enable<\/td><\/tr><\/table>","application_scenarios":"<ul><li>Battery-backed industrial data storage<\/li><li>Low-power embedded SRAM expansion<\/li><li>Telecom packet buffer<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>ISSI<\/td><td>IS61WV51216EDBLL-10TLI<\/td><td>TSOP<\/td><td>10ns high-speed 512Kx16<\/td><\/tr><tr><td>Lyontek<\/td><td>LY62L51216ML-70LLI<\/td><td>TSOP<\/td><td>70ns slower variant<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/12329","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/comments?post=12329"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/12329\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/media?parent=12329"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/categories?post=12329"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/tags?post=12329"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=12329"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}