{"id":12334,"date":"2026-07-28T03:24:25","date_gmt":"2026-07-28T03:24:25","guid":{"rendered":"https:\/\/ic-vendor.com\/k4a4g165wg-bcwe\/"},"modified":"2026-07-28T03:24:25","modified_gmt":"2026-07-28T03:24:25","slug":"k4a4g165wg-bcwe","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/zh\/k4a4g165wg-bcwe\/","title":{"rendered":"K4A4G165WG-BCWE"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The K4A4G165WG-BCWE is a 4Gbit (256M x 16) DDR4 SDRAM from Samsung operating at 1.2V with up to 3200 MT\/s data rate. It features 4 bank groups (16 total banks), BL8\/BC4 on-the-fly, and CL22 timing at 3200 MT\/s, providing high bandwidth for embedded computing and networking applications.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n
Density<\/td>\n4Gbit (256M x 16)<\/td>\n<\/tr>\n
Standard<\/td>\nDDR4 SDRAM<\/td>\n<\/tr>\n
\u6570\u636e\u901f\u7387<\/td>\nUp to 3200 MT\/s<\/td>\n<\/tr>\n
\u7535\u6e90\u7535\u538b<\/td>\n1.2V<\/td>\n<\/tr>\n
CAS Latency<\/td>\nCL22 @ 3200 MT\/s<\/td>\n<\/tr>\n
Banks<\/td>\n4 BG x 4 = 16<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nFBGA<\/td>\n<\/tr>\n
\u90e8\u4ef6\u72b6\u6001<\/td>\n\u6d3b\u8dc3<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • 4Gbit DDR4 SDRAM with x16 organization<\/li>\n
  • DDR4-3200 data rate (CL22)<\/li>\n
  • 1.2V low-power operation<\/li>\n
  • 4 bank groups with 16 banks<\/li>\n
  • BL8\/BC4 on-the-fly burst length<\/li>\n
  • Write leveling, ODT, and DBI<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Embedded DDR4 memory subsystems<\/li>\n
    • Networking and computing<\/li>\n
    • AI\/ML accelerators<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The K4A4G165WG-BCWE is a 4Gbit (256M x 16) DDR4 SDRAM from Samsung operating at 1.2V with up to 3200 MT\/s data rate. It features 4 bank groups (16 total banks), BL8\/BC4 on-the-fly, and CL22 timing at 3200 MT\/s, providing high bandwidth for embedded computing and networking applications. Key Specifications Density 4Gbit (256M x […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[3328],"chip_brand":[162],"class_list":["post-12334","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","tag-k4a4g165wg-bcwe","chip_brand-samsung"],"acf":{"brief_explanation":"4Gb DDR4-3200 SDRAM, 256Mx16, 1.2V, CL22, 4-bank-group, FBGA","date_code":"","package_case":"FBGA","in_stock":5876,"datasheet":"https:\/\/www.samsung.com\/semiconductor\/dram\/ddr4\/","price":"","product_introduction":"The K4A4G165WG-BCWE is a 4Gbit DDR4 SDRAM from Samsung organized as 256M x 16 bits, operating at 1.2V with data rates up to 3200 MT\/s (DDR4-3200, CL22). The x16 bus width and 4 bank group architecture provide high bandwidth for embedded computing, networking, and AI\/ML applications.","working_principle":"DDR4 SDRAM per JEDEC JESD79-4. Commands clocked on rising edge of CK\/CK#. Data transferred on both edges of DQS (double data rate). Bank group architecture enables pipelined operations for higher effective bandwidth. Write leveling and ODT improve signal integrity at high speeds.","pin_description":"
      Pin Group<\/th>Interface<\/th>Function<\/th><\/tr>
      A0-A17, BA0-BA1, BG0-BG1<\/td>Input<\/td>Address, bank, bank group<\/td><\/tr>
      DQ0-DQ15<\/td>I\/O<\/td>16-bit data bus<\/td><\/tr>
      DQS\/DQS#<\/td>I\/O<\/td>Data strobes<\/td><\/tr>
      CK\/CK#, CKE, CS#, RAS#, CAS#, WE#<\/td>Input<\/td>Clock and command<\/td><\/tr><\/table>","application_scenarios":"
      • Embedded DDR4 memory for SoC\/FPGA<\/li>
      • Networking ASIC buffer memory<\/li>
      • AI inference accelerator local memory<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Micron<\/td>MT40A4G16TW-16E<\/td>FBGA<\/td>4Gb DDR4 x16 alternative<\/td><\/tr>
        SK Hynix<\/td>H5AN4G6NDJR-VNC<\/td>FBGA<\/td>4Gb DDR4 x16 alternative<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/12334","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/comments?post=12334"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/12334\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/media?parent=12334"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/categories?post=12334"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/tags?post=12334"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=12334"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}