Diodes Incorporated \u7684 DMN10H220L-7 \u662f\u4e00\u6b3e 100V N \u6c9f\u9053\u589e\u5f3a\u578b\u529f\u7387 MOSFET\uff0c\u91c7\u7528 3 \u5f15\u811a SOT-23 \u5c01\u88c5\uff0c\u5e26\u5377\u5e26\u5c01\u88c5\u3002\u5b83\u5728 VGS=10V \u65f6\u5177\u6709 220 mOhm \u6700\u5927 RDS(on)\u30011.6A \u8fde\u7eed\u6f0f\u6781\u7535\u6d41\u300110V \u65f6 8.3 nC \u5178\u578b\u6805\u6781\u7535\u8377\u3001401 pF \u8f93\u5165\u7535\u5bb9\u30011.3W \u529f\u8017\u548c 2.5V \u6700\u5927\u9608\u503c\u7535\u538b\u3002\u5f00\u5173\u901f\u5ea6\u5feb\uff0c\u5f00\u542f\u5ef6\u8fdf\u65f6\u95f4\u4e3a 6.8ns\uff0c\u4e0a\u5347\u65f6\u95f4\u4e3a 8.2ns\u3002\u65e0\u5364\u7d20\u3001\u65e0\u9511\uff0c\u7b26\u5408 RoHS \u89c4\u8303\u3002\u5de5\u4f5c\u6e29\u5ea6\u8303\u56f4\u4e3a -55C \u81f3 +150C\u3002\u6807\u8bb0\u4ee3\u7801\uff1aN1H\u3002.<\/p>","protected":false},"excerpt":{"rendered":"
The DMN10H220L-7 from Diodes Incorporated is a 100V N-channel enhancement-mode power MOSFET in a 3-pin SOT-23 package with tape-and-reel packaging. It features 220 mOhm max RDS(on) at VGS=10V, 1.6A continuous drain current, 8.3 nC typical gate charge at 10V, 401 pF input capacitance, 1.3W power dissipation, and threshold voltage of 2.5V max. Fast switching speed […]<\/p>\n","protected":false},"author":2,"featured_media":2254,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,55],"tags":[],"chip_brand":[163],"class_list":["post-2078","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-integrated-circuits-ics","category-transistors","chip_brand-diodes-incorporated"],"acf":{"brief_explanation":"100V N-ch MOSFET, 1.6A, 220mOhm@10V, 8.3nC Qg, SOT-23-3 T\/R, low-cost load switch","date_code":"","package_case":"SOT-23-3 (2.9 x 1.3 x 0.98 mm, gull-wing)","in_stock":35443,"datasheet":"https:\/\/www.diodes.com\/assets\/Datasheets\/DMN10H220L.pdf","price":"$0.12 (3K+ pcs)","product_introduction":"The DMN10H220L-7 from Diodes Incorporated is a 100V N-channel enhancement-mode power MOSFET in the compact SOT-23-3 surface-mount package with tape-and-reel packaging (3000 units\/reel). The -7 suffix denotes tape-and-reel format.\n\nThe device is designed to minimize on-state resistance while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The 220 mOhm maximum RDS(on) at VGS=10V (250 mOhm at 4.5V) is competitive for a 100V MOSFET in the tiny SOT-23 package, providing sufficient current handling for low-power DC-DC converters, load switches, and backlight drivers.\n\nThe 1.6A continuous drain current rating at 25C ambient and 1.3W power dissipation make the device suitable for space-constrained applications where larger MOSFET packages cannot fit. The 8A pulsed drain current provides margin for inrush current handling in load-switch applications.\n\nThe 8.3 nC typical gate charge at 10V (4.1 nC at 4.5V) enables efficient switching with low drive power, suitable for high-frequency DC-DC conversion up to several hundred kHz. The 401 pF input capacitance is moderate for this voltage rating.\n\nThe maximum threshold voltage of 2.5V at 250 uA allows the device to be driven from 3.3V or 5V logic, though full enhancement (lowest RDS(on)) requires 10V gate drive. At 4.5V gate drive, RDS(on) increases to 250 mOhm, still acceptable for many low-current applications.\n\nFast switching characteristics include 6.8 ns turn-on delay, 8.2 ns rise time, 7.9 ns turn-off delay, and 3.6 ns fall time (all typical), making the device suitable for high-frequency switching applications.\n\nThe DMN10H220L series also includes variants: DMN10H220LVT-7 (SOT-23-3, higher current rating of 2.24A with improved RDS(on)), and DMN10H220LE (SOT-89, higher current and power). The DMN10H220LQ-7 is the AEC-Q101 qualified automotive version.","working_principle":"**N-Channel Enhancement MOSFET:** The DMN10H220L uses vertical DMOS (Double-diffused MOS) technology. Current flows vertically from the source (top) through the channel to the drain (bottom). When VGS exceeds the threshold voltage (1.0-2.5V), an inversion layer forms under the gate oxide, creating a conductive N-type channel between source and drain. RDS(on) decreases with increasing VGS as the channel becomes more enhanced.\n\n**SOT-23-3 Pinout:** The 3-pin SOT-23 package assigns pin 1 to gate, pin 2 to source, and pin 3 to drain. This simple pinout is standard for small-signal and low-power MOSFETs but lacks the multi-pin source\/drain connections of larger packages, resulting in higher package parasitic inductance and resistance.\n\n**100V Rating:** The 100V VDS rating makes this device suitable for 48V nominal systems (48V + 40% tolerance = 67V, leaving 33V margin). Applications include telecom (48V), automotive (12V\/24V battery), and industrial (24V\/48V bus) power management.\n\n**Body Diode:** The inherent body diode from source to drain (anode at source, cathode at drain) has a typical forward voltage of approximately 0.9-1.2V. This diode conducts during dead-time in bridge configurations but is not designed for continuous current rectification.","pin_description":"
| Pin<\/th> | Name<\/th> | Type<\/th> | Description<\/th><\/tr><\/thead> | ||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1<\/td> | Gate<\/td> | I<\/td> | Gate input; VGS(th) 1.0-2.5V; VGS max +\/-16V; 8.3nC gate charge@10V; drive from MCU GPIO or gate driver through series resistor (10-100 Ohm); must not float<\/td><\/tr> | ||||||||||||||||||||||||
| 2<\/td> | Source<\/td> | P\/G<\/td> | Source terminal; typically connects to GND for low-side switching; body diode anode; 1.6A continuous current<\/td><\/tr> | ||||||||||||||||||||||||
| 3<\/td> | Drain<\/td> | O<\/td> | Drain terminal; 100V max VDS; 220mOhm RDS(on)@10V; connects to load or inductor; primary thermal path; solder to copper pour<\/td><\/tr><\/tbody><\/table>","application_scenarios":"
|