\u4e1c\u829d\u7535\u5b50\u5668\u4ef6\u548c\u5b58\u50a8\u516c\u53f8\u7684 TLP152 \u662f\u4e00\u6b3e\u5355\u901a\u9053 IGBT\/MOSFET \u6805\u6781\u9a71\u52a8\u5149\u8026\u5408\u5668\uff0c\u91c7\u7528 5 \u5f15\u811a SO6 \u5c01\u88c5\uff083.7 x 7.0 x 2.1 mm\uff09\u3002\u5b83\u91c7\u7528 GaAlAs \u7ea2\u5916 LED\uff0c\u5149\u8026\u5408\u5230\u5e26\u56fe\u817e\u67f1\u8f93\u51fa\u7684\u9ad8\u589e\u76ca\u9ad8\u901f\u5149\u7535\u96c6\u6210\u7535\u8def\u3002\u4e3b\u8981\u89c4\u683c+\/-2.5A \u5cf0\u503c\u8f93\u51fa\u7535\u6d41\u300110-30V \u7535\u6e90\u30013750 Vrms \u9694\u79bb\u7535\u538b\u3001+\/-20 kV\/us \u5171\u6a21\u77ac\u6001\u6297\u6270\u5ea6\u3001170\/190 ns \u4f20\u64ad\u5ef6\u8fdf\u4ee5\u53ca\u5b89\u5168\u6807\u51c6\u8ba4\u8bc1\uff08UL1577\u3001VDE EN60747-5-5\u3001CQC\uff09\u3002\u540e\u7f00 TPLE \u8868\u793a\u5e26\u5377\u5c01\u88c5\u3002\u5de5\u4f5c\u6e29\u5ea6 -40C \u81f3 +100C\u3002.<\/p>","protected":false},"excerpt":{"rendered":"
The TLP152 from Toshiba Electronic Devices and Storage is a 1-channel IGBT\/MOSFET gate drive photocoupler in a 5-pin SO6 package (3.7 x 7.0 x 2.1 mm). It features a GaAlAs infrared LED optically coupled to a high-gain, high-speed photo-IC with totem-pole output. Key specs: +\/-2.5A peak output current, 10-30V supply, 3750 Vrms isolation voltage, +\/-20 […]<\/p>\n","protected":false},"author":2,"featured_media":2251,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,20],"tags":[],"chip_brand":[169],"class_list":["post-2081","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-integrated-circuits-ics","category-interface-ics","chip_brand-toshiba"],"acf":{"brief_explanation":"IGBT gate drive photocoupler, +\/-2.5A peak, 3750Vrms isolation, 20kV\/us CMTI, SO6 T\/R","date_code":"","package_case":"5-pin SO6 (3.7 x 7.0 x 2.1 mm, 2.54mm pitch, gull-wing, SMD)","in_stock":1806,"datasheet":"https:\/\/toshiba.semicon-storage.com\/info\/lookup.jsp?pid=TLP152","price":"$0.55 (1+ pcs)","product_introduction":"The TLP152 from Toshiba Electronic Devices and Storage is a 1-channel gate drive photocoupler in a 5-pin SO6 surface-mount package. The TLP152(TPL,E(T ordering variant specifies tape-and-reel packaging. The device consists of a GaAlAs infrared LED optically coupled to an integrated high-gain, high-speed photodetector IC with totem-pole output.\n\nThe totem-pole output configuration provides both sourcing and sinking capability with +\/-2.5A peak output current, suitable for directly driving small to medium IGBTs or power MOSFETs without an external amplifier. This is a significant advantage over open-collector photocouplers that require external pull-up resistors and provide only sinking capability.\n\nThe device provides 3750 Vrms minimum isolation voltage (60 seconds, RH <= 60%), meeting the safety requirements of IEC 60747-5-5 and EN 62368-1. Safety standard approvals include UL1577, cUL (CSA), VDE (EN 60747-5-5), and CQC (GB 4943.1), making it suitable for applications requiring reinforced insulation.\n\nThe internal shield in the photodetector IC provides a high common-mode transient immunity (CMTI) of +\/-20 kV\/us minimum, ensuring reliable operation in noisy switching environments such as motor drive inverters where high dv\/dt transients are common.\n\nThe propagation delay time is 170 ns maximum (L-to-H) and 190 ns maximum (H-to-L), with pulse width distortion of 50 ns maximum. These timing characteristics are adequate for switching frequencies up to 50-100 kHz in typical motor drive applications.\n\nThe threshold input current (IFLH) is 7.5 mA maximum, meaning the LED must be driven with at least 7.5 mA to guarantee output switching. Typical LED forward voltage is 1.4V minimum to 1.8V maximum at 10 mA. The supply current (ICC) is only 3.0 mA maximum at VCC = 30V, making the device suitable for bootstrap-powered high-side drive circuits where supply current is limited.\n\nThe recommended supply voltage range is 10V to 30V, covering the 15V typically used for IGBT gate drive and 12V for MOSFET gate drive. A 0.1 uF bypass capacitor must be connected between VCC (pin 6) and GND (pin 4).\n\nThe TLP152 is widely used in industrial inverters, plasma display panels (PDPs), and photovoltaic inverters. It is also suitable for induction cooktop applications.","working_principle":"**Optical Isolation:** The GaAlAs infrared LED on the input side emits light when forward current (IF) flows through it. The photodetector IC on the output side receives this light through the optically transparent isolation barrier. The electrical connection between input and output is broken; only light passes through, providing galvanic isolation rated at 3750 Vrms.\n\n**Photodetector IC with Totem-Pole Output:** The photodetector IC consists of a photodiode, amplifier, and totem-pole output stage. When the LED is ON, the photodiode generates a current that is amplified and drives the upper transistor (M1) of the totem-pole output ON and the lower transistor (M2) OFF, pulling VO HIGH. When the LED is OFF, M1 turns OFF and M2 turns ON, pulling VO LOW. This push-pull action provides both sourcing (+2.5A peak) and sinking (-2.5A peak) capability.\n\n**Internal Shield for CMTI:** The internal shield layer between the LED and photodetector blocks capacitive coupling between the input and output sides. Without this shield, high dv\/dt transients on the output side (switching node) would couple displacement current into the photodetector through parasitic capacitance, potentially causing false switching. The shield diverts this displacement current to ground, achieving +\/-20 kV\/us CMTI.\n\n**Truth Table:** LED ON -> M1 ON, M2 OFF -> VO = HIGH. LED OFF -> M1 OFF, M2 ON -> VO = LOW. This means the output follows the LED state with non-inverting logic. A gate driver IC or MCU drives the LED through a current-limiting resistor.","pin_description":"
| Pin<\/th> | Name<\/th> | Type<\/th> | Description<\/th><\/tr><\/thead> | ||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1<\/td> | Anode<\/td> | I<\/td> | LED anode; connect through current-limiting resistor to gate driver output; forward voltage 1.4-1.8V@10mA; drive with 10-20mA for reliable switching; max 20mA continuous, 40mA peak<\/td><\/tr> | ||||||||||||||||||||||||
| 3<\/td> | Cathode<\/td> | I<\/td> | LED cathode; connect to gate driver ground or logic LOW; reverse voltage max 5V; do not reverse bias beyond rating<\/td><\/tr> | ||||||||||||||||||||||||
| 4<\/td> | GND<\/td> | G<\/td> | Output side ground; connect to IGBT emitter or MOSFET source; reference for VO output; connect bypass capacitor to VCC<\/td><\/tr> | ||||||||||||||||||||||||
| 5<\/td> | VO<\/td> | O<\/td> | Totem-pole output; +\/-2.5A peak; connects to IGBT\/MOSFET gate through gate resistor; HIGH when LED ON; LOW when LED OFF; swings between GND and VCC<\/td><\/tr> | ||||||||||||||||||||||||
| 6<\/td> | VCC<\/td> | P<\/td> | Output side supply; 10-30V recommended; 35V absolute max; powers output stage and photodetector IC; 3mA max ICC; decouple with 0.1uF ceramic to GND near pin; typically 15V for IGBT, 12V for MOSFET<\/td><\/tr><\/tbody><\/table>","application_scenarios":"
|