{"id":7393,"date":"2026-06-24T04:53:24","date_gmt":"2026-06-24T04:53:24","guid":{"rendered":"https:\/\/ic-vendor.com\/mt41k128m16jt-125itk\/"},"modified":"2026-06-24T04:53:24","modified_gmt":"2026-06-24T04:53:24","slug":"mt41k128m16jt-125itk","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/zh\/mt41k128m16jt-125itk\/","title":{"rendered":"MT41K128M16JT-125IT:K"},"content":{"rendered":"<h2>\u4ea7\u54c1\u6982\u89c8<\/h2>\n<p>The MT41K128M16JT-125IT:K from Micron is a 2Gb (128MB) DDR3L SDRAM organized as 8M x 16 x 4 banks, operating at 1600MT\/s (DDR3L-1600) with 1.35V supply in a 96-ball WBGA package. Industrial temperature range -40\u00b0C to +95\u00b0C.<\/p>\n<h2>\u4e3b\u8981\u89c4\u683c<\/h2>\n<table>\n<tr>\n<td>Density<\/td>\n<td>2 Gb (128 MB)<\/td>\n<\/tr>\n<tr>\n<td>Organization<\/td>\n<td>8M x 16 x 4 banks<\/td>\n<\/tr>\n<tr>\n<td>Interface<\/td>\n<td>DDR3L SDRAM<\/td>\n<\/tr>\n<tr>\n<td>\u6570\u636e\u901f\u7387<\/td>\n<td>1600 MT\/s (PC3L-12800)<\/td>\n<\/tr>\n<tr>\n<td>CL-tRCD-tRP<\/td>\n<td>11-11-11 @ 1.35V<\/td>\n<\/tr>\n<tr>\n<td>Supply Voltage (VDD)<\/td>\n<td>1.35 V (DDR3L)<\/td>\n<\/tr>\n<tr>\n<td>Supply Voltage (VDD)<\/td>\n<td>1.5 V (DDR3 backward compat)<\/td>\n<\/tr>\n<tr>\n<td>Bus Width<\/td>\n<td>16-bit<\/td>\n<\/tr>\n<tr>\n<td>Refresh Rate<\/td>\n<td>8192 rows \/ 64ms<\/td>\n<\/tr>\n<tr>\n<td>\u5de5\u4f5c\u6e29\u5ea6<\/td>\n<td>-40\u00b0C to +95\u00b0C (Industrial)<\/td>\n<\/tr>\n<tr>\n<td>\u5305\u88c5<\/td>\n<td>96-ball WBGA (8x14mm)<\/td>\n<\/tr>\n<\/table>\n<h2>\u7279\u70b9<\/h2>\n<ul>\n<li>2Gb DDR3L SDRAM at 1600MT\/s with 1.35V low-power operation<\/li>\n<li>Backward compatible with 1.5V DDR3 at 1333MT\/s<\/li>\n<li>16-bit data bus for embedded processor memory interfaces<\/li>\n<li>Industrial temperature range -40\u00b0C to +95\u00b0C<\/li>\n<\/ul>\n<h2>\u5e94\u7528<\/h2>\n<ul>\n<li>Embedded system memory for industrial and automotive processors<\/li>\n<li>Networking and telecom equipment DDR3L memory<\/li>\n<li>Consumer electronics and set-top box main memory<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The MT41K128M16JT-125IT:K from Micron is a 2Gb (128MB) DDR3L SDRAM organized as 8M x 16 x 4 banks, operating at 1600MT\/s (DDR3L-1600) with 1.35V supply in a 96-ball WBGA package. Industrial temperature range -40\u00b0C to +95\u00b0C. Key Specifications Density 2 Gb (128 MB) Organization 8M x 16 x 4 banks Interface DDR3L SDRAM [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[],"chip_brand":[3],"class_list":["post-7393","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","chip_brand-micron"],"acf":{"brief_explanation":"2Gb DDR3L-1600 SDRAM, 16-bit, 1.35V, 128MB, industrial temp, 96-WBGA","date_code":"","package_case":"96-ball WBGA (8.0 x 14.0 x 1.0 mm)","in_stock":5400,"datasheet":"https:\/\/www.micron.com\/-\/media\/client-global\/documents\/products\/data-sheet\/dram\/ddr3\/4gb_ddr3l.pdf","price":"$4.20 @ 1ku","product_introduction":"The MT41K128M16JT-125IT:K from Micron is a 2-gigabit DDR3L SDRAM device organized as 8,388,608 words x 16 bits x 4 banks. The device operates at a maximum data rate of 1600 MT\/s (PC3L-12800) at 1.35V supply, conforming to the DDR3L standard (low-voltage DDR3). It is backward compatible with standard 1.5V DDR3 operation at 1333 MT\/s. The 16-bit bus width makes it suitable for pairing with 16-bit embedded processors or using two devices for a 32-bit memory bus. The JT package denotes the 96-ball WBGA form factor (8x14mm). The I suffix indicates industrial temperature range (-40C to +95C). The :K suffix indicates the specific die revision. On-die termination (ODT), programmable CAS latency, and programmable additive latency provide flexibility for system timing optimization.","working_principle":"The MT41K128M16JT-125IT:K operates as a double-data-rate synchronous dynamic random-access memory. (1) DDR3L Architecture: The memory is organized as 4 banks of 8,388,608 x 16-bit words. Each bank can be accessed independently, allowing bank interleaving for higher effective bandwidth. (2) Double Data Rate: Data is transferred on both the rising and falling edges of the clock, achieving 1600 MT\/s from an 800MHz clock. The prefetch architecture reads\/writes 8n-bit words per access (8-bit prefetch), amortizing the access overhead across 8 data transfers. (3) Low Voltage: DDR3L operation at 1.35V reduces power consumption by approximately 15-20% compared to standard 1.5V DDR3. The internal VREFDQ reference voltage is generated on-die, simplifying system design. (4) ODT: On-die termination provides programmable termination resistance (34, 40, 48, 60, 120 Ohm) on the DQ, DQS, and DM pins, reducing signal reflections and improving signal integrity without external termination components.","pin_description":"<table><tr><th>Pin Group<\/th><th>Count<\/th><th>Function<\/th><\/tr><tr><td>DQ<\/td><td>16<\/td><td>Data bus (bidirectional)<\/td><\/tr><tr><td>A0-A14<\/td><td>15<\/td><td>Address inputs<\/td><\/tr><tr><td>BA0-BA1<\/td><td>2<\/td><td>Bank select<\/td><\/tr><tr><td>CK\/CK#<\/td><td>2<\/td><td>Differential clock<\/td><\/tr><tr><td>CS#, RAS#, CAS#, WE#<\/td><td>4<\/td><td>Command inputs<\/td><\/tr><tr><td>DQS\/DQS#<\/td><td>2<\/td><td>Data strobe (differential)<\/td><\/tr><tr><td>VDD\/VSS<\/td><td>Multiple<\/td><td>1.35V power and ground<\/td><\/tr><\/table>","application_scenarios":"<ul><li>Embedded processor DDR3L memory at 1600MT\/s in industrial applications<\/li><li>Networking and telecom equipment main memory at 1.35V low power<\/li><li>Consumer electronics and set-top box 128MB memory subsystem<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>Micron<\/td><td>MT41K256M16TW-107IT:P<\/td><td>96-WBGA<\/td><td>4Gb (256MB), same org<\/td><\/tr><tr><td>Samsung<\/td><td>K4B2G1646Q-BYK0<\/td><td>96-WBGA<\/td><td>2Gb DDR3L-1600, similar<\/td><\/tr><tr><td>Winbond<\/td><td>W631GU6KB-12<\/td><td>96-WBGA<\/td><td>2Gb DDR3L-1600, 16-bit<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/7393","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/comments?post=7393"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/7393\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/media?parent=7393"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/categories?post=7393"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/tags?post=7393"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=7393"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}