{"id":7789,"date":"2026-06-27T03:11:55","date_gmt":"2026-06-27T03:11:55","guid":{"rendered":"https:\/\/ic-vendor.com\/bas16j115\/"},"modified":"2026-06-28T10:09:48","modified_gmt":"2026-06-28T10:09:48","slug":"bas16j115","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/zh\/bas16j115\/","title":{"rendered":"BAS16J115"},"content":{"rendered":"<h2>\u4ea7\u54c1\u6982\u89c8<\/h2>\n<p>The BAS16J,115 is a high-speed switching diode from Nexperia encapsulated in a very small and flat SOD-323F (SC-90) surface-mount package. It features 4 ns reverse recovery time, 100 V reverse voltage, 250 mA average forward current, and low capacitance in a 1.7 \u00d7 1.25 \u00d7 0.7 mm body.<\/p>\n<h2>\u4e3b\u8981\u89c4\u683c<\/h2>\n<table>\n<tr>\n<td>Repetitive Peak Reverse Voltage<\/td>\n<td>100 V<\/td>\n<\/tr>\n<tr>\n<td>Average Forward Current<\/td>\n<td>250 mA<\/td>\n<\/tr>\n<tr>\n<td>Forward Voltage (max)<\/td>\n<td>1.0 V at IF = 50 mA; 1.25 V at IF = 150 mA<\/td>\n<\/tr>\n<tr>\n<td>Reverse Recovery Time<\/td>\n<td>\u2264 4 ns<\/td>\n<\/tr>\n<tr>\n<td>Reverse Leakage Current<\/td>\n<td>500 nA at VR = 80 V<\/td>\n<\/tr>\n<tr>\n<td>Junction Capacitance<\/td>\n<td>1.5 pF at 0 V, 1 MHz<\/td>\n<\/tr>\n<tr>\n<td>Forward Surge Current<\/td>\n<td>4 A (8.3 ms half-sine)<\/td>\n<\/tr>\n<tr>\n<td>\u5de5\u4f5c\u6e29\u5ea6<\/td>\n<td>-55\u00b0C to +150\u00b0C (junction)<\/td>\n<\/tr>\n<tr>\n<td>\u5305\u88c5<\/td>\n<td>SOD-323F (SC-90)<\/td>\n<\/tr>\n<\/table>\n<h2>\u7279\u70b9<\/h2>\n<ul>\n<li>High switching speed: trr \u2264 4 ns<\/li>\n<li>Low capacitance: 1.5 pF<\/li>\n<li>Low leakage current: 500 nA at 80 V<\/li>\n<li>100 V reverse voltage rating<\/li>\n<li>Very small and flat SOD-323F package<\/li>\n<li>Low forward voltage<\/li>\n<li>AEC-Q101 qualified (automotive grade)<\/li>\n<\/ul>\n<h2>\u5e94\u7528<\/h2>\n<ul>\n<li>High-speed switching<\/li>\n<li>General-purpose switching<\/li>\n<li>Reverse polarity protection<\/li>\n<li>Signal clipping and clamping<\/li>\n<li>Automotive electronics<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The BAS16J,115 is a high-speed switching diode from Nexperia encapsulated in a very small and flat SOD-323F (SC-90) surface-mount package. It features 4 ns reverse recovery time, 100 V reverse voltage, 250 mA average forward current, and low capacitance in a 1.7 \u00d7 1.25 \u00d7 0.7 mm body. Key Specifications Repetitive Peak Reverse [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[],"chip_brand":[],"class_list":["post-7789","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics"],"acf":{"brief_explanation":"High-speed switching diode, 100V, 250mA, trr\u22644ns, 1.5pF, SOD-323F","date_code":"","package_case":"SOD-323F \/ SC-90 (1.7 x 1.25 x 0.7 mm)","in_stock":4664,"datasheet":"https:\/\/assets.nexperia.com\/documents\/data-sheet\/BAS16_SER.pdf","price":"$0.037 @ 1ku","product_introduction":"The BAS16J,115 is a high-speed switching diode from Nexperia encapsulated in a very small and flat lead SOD-323F (SC-90) surface-mount plastic package. It features ultra-fast reverse recovery time of 4 ns, low junction capacitance of 1.5 pF, and low reverse leakage current of 500 nA. With 100 V reverse voltage and 250 mA average forward current ratings, it is suitable for high-speed switching and general-purpose applications in space-constrained designs. The device is AEC-Q101 qualified for automotive applications.","working_principle":"The BAS16J is a planar silicon switching diode that uses a diffused junction structure optimized for fast switching. When forward biased, current flows through the PN junction with a typical forward voltage drop of approximately 1 V at 50 mA. When the bias is rapidly reversed, stored minority carriers in the junction region must be cleared before the diode blocks reverse current. The optimized junction profile minimizes stored charge, achieving reverse recovery times of \u2264 4 ns. The small junction area provides low capacitance (1.5 pF), which is critical for high-speed signal switching applications. The glass passivated junction ensures low leakage current and high reliability.","pin_description":"<table border=\"1\" cellpadding=\"4\">\n<tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Description<\/th><\/tr>\n<tr><td>1<\/td><td>Cathode<\/td><td>Passive<\/td><td>N-type region (marked with band)<\/td><\/tr>\n<tr><td>2<\/td><td>Anode<\/td><td>Passive<\/td><td>P-type region<\/td><\/tr>\n<\/table>","application_scenarios":"<ul>\n<li><strong>High-Speed Logic Switching:<\/strong> 4 ns trr and 1.5 pF capacitance enable fast signal routing in digital circuits<\/li>\n<li><strong>Reverse Polarity Protection:<\/strong> 100 V reverse voltage rating protects low-voltage circuits from supply reversal<\/li>\n<li><strong>Signal Clipping\/Clamping:<\/strong> Low forward voltage and fast recovery protect sensitive inputs from voltage spikes<\/li>\n<li><strong>Automotive Electronics:<\/strong> AEC-Q101 qualification ensures reliability in engine control and body electronics<\/li>\n<li><strong>Portable Devices:<\/strong> Tiny 1.7\u00d71.25mm SOD-323F package minimizes board area in smartphones and wearables<\/li>\n<\/ul>","alternative_models":"<table border=\"1\" cellpadding=\"4\">\n<tr><th>Model<\/th><th>Manufacturer<\/th><th>Key Difference<\/th><th>Package<\/th><th>VR<\/th><\/tr>\n<tr><td>BAS16,215<\/td><td>Nexperia<\/td><td>SOD-523 (0.8x0.6mm) ultra-small package for space-constrained RF and logic circuits<\/td><td>SOD-523<\/td><td>75V<\/td><\/tr>\n<tr><td>BAS16H,115<\/td><td>Nexperia<\/td><td>SOD-123F (2.5x1.6mm) larger package for easier manual assembly and better thermal<\/td><td>SOD-123F<\/td><td>75V<\/td><\/tr>\n<tr><td>BAS16LT1G<\/td><td>onsemi<\/td><td>SOT-23-3 through-hole compatible with higher 250mA IF rating and AEC-Q101 available<\/td><td>SOT-23-3<\/td><td>75V<\/td><\/tr>\n<tr><td>1N4148W-7-F<\/td><td>Diodes Inc<\/td><td>Industry-standard 75V switching diode in SOD-123 with 4ns fast reverse recovery<\/td><td>SOD-123<\/td><td>75V<\/td><\/tr>\n<tr><td>BAS21-7-F<\/td><td>Diodes Inc<\/td><td>Higher voltage (200V) general-purpose switching diode in SOT-23 for protection circuits<\/td><td>SOT-23-3<\/td><td>200V<\/td><\/tr>\n<tr><td>BAV16W-7-F<\/td><td>Diodes Inc<\/td><td>75V high-speed switching diode in SOD-323 with low 1pF capacitance for RF applications<\/td><td>SOD-323<\/td><td>75V<\/td><\/tr>\n<\/table>\n<p>The BAS16J is a 75V high-speed switching diode in SOD-323 package with 4ns reverse recovery time. For smaller footprints, the BAS16,215 (SOD-523) saves 75% board area. For automotive applications, BAS16LT1G offers AEC-Q101 qualification in SOT-23-3.<\/p>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/7789","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/comments?post=7789"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/7789\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/media?parent=7789"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/categories?post=7789"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/tags?post=7789"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=7789"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}