{"id":9115,"date":"2026-07-02T11:35:30","date_gmt":"2026-07-02T11:35:30","guid":{"rendered":"https:\/\/ic-vendor.com\/sjm3359b1w2t1g\/"},"modified":"2026-07-03T08:03:58","modified_gmt":"2026-07-03T08:03:58","slug":"sjm3359b1w2t1g","status":"publish","type":"post","link":"https:\/\/ic-vendor.com\/zh\/sjm3359b1w2t1g\/","title":{"rendered":"SJM3359B1W2T1G"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The onsemi SJM3359B1W2T1G is an automotive-qualified P-channel MOSFET rated at -60 V VDSS with low RDS(on) for high-side load switching applications. Featuring AEC-Q101 compliance, it is designed for automotive power management circuits where P-channel MOSFETs simplify high-side drive without charge pumps.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n
\u6781\u6027<\/td>\nP-Channel<\/td>\n<\/tr>\n
VDSS<\/sub><\/td>\n-60 V<\/td>\n<\/tr>\n
RDS(on)<\/sub> Max @ VGS<\/sub>=-10V<\/td>\n38 m\u03a9<\/td>\n<\/tr>\n
ID<\/sub><\/td>\n-10 A<\/td>\n<\/tr>\n
VGS(th)<\/sub><\/td>\n-1.0 V to -2.5 V<\/td>\n<\/tr>\n
Qg<\/sub> (typ)<\/td>\n28 nC<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55 \u00b0C to +150 \u00b0C<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nWDFN-8 (5 x 6 mm)<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • AEC-Q101 qualified for automotive applications<\/li>\n
  • P-Channel MOSFET for high-side switching without charge pump<\/li>\n
  • Low RDS(on): 38 m\u03a9 max at VGS = -10 V<\/li>\n
  • -60 V drain-source voltage rating<\/li>\n
  • Low gate charge for efficient switching<\/li>\n
  • WDFN package with exposed thermal pad<\/li>\n
  • Pb-free, RoHS compliant<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Automotive high-side load switches<\/li>\n
    • Power distribution and battery disconnect<\/li>\n
    • Reverse polarity protection circuits<\/li>\n
    • Automotive lighting control<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The onsemi SJM3359B1W2T1G is an automotive-qualified P-channel MOSFET rated at -60 V VDSS with low RDS(on) for high-side load switching applications. Featuring AEC-Q101 compliance, it is designed for automotive power management circuits where P-channel MOSFETs simplify high-side drive without charge pumps. Key Specifications Polarity P-Channel VDSS -60 V RDS(on) Max @ VGS=-10V 38 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[681],"chip_brand":[144],"class_list":["post-9115","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-sjm3359b1w2t1g","chip_brand-on"],"acf":{"brief_explanation":"P-ch MOSFET, -60V, 38m\u03a9, -10A, WDFN-8, AEC-Q101","date_code":"","package_case":"WDFN-8 (5 x 6 x 1.0 mm)","in_stock":5432,"datasheet":"https:\/\/www.onsemi.com\/download\/data-sheet\/pdf\/sjm3359b-d.pdf","price":"$0.65 @ 1ku","product_introduction":"The onsemi SJM3359B1W2T1G is a -60 V P-channel power MOSFET designed for automotive high-side load switching applications. As a P-channel device, it can be driven directly from a logic-level gate signal to switch the positive supply rail, eliminating the need for a charge pump or bootstrap circuitry required by N-channel high-side configurations. The 38 m\u03a9 maximum RDS(on) at VGS = -10 V minimizes conduction losses, while the -60 V rating provides margin for 48V automotive bus systems with load dump transients. AEC-Q101 qualification ensures reliable operation in automotive environments. The WDFN-8 package with exposed thermal pad provides efficient heat dissipation in space-constrained applications. The device is suitable for battery disconnect switches, reverse polarity protection, and power distribution modules in automotive body electronics.","working_principle":"The SJM3359B1W2T1G operates as a voltage-controlled P-channel enhancement-mode MOSFET. When the gate-to-source voltage (VGS) is driven negative below the threshold voltage (typically -1.5 V), an inversion layer forms in the N-body region, creating a conductive channel between source and drain. The P-channel structure means that current flows from source (connected to the positive supply) to drain (connected to the load), making it ideal for high-side switching. The key advantage of P-channel MOSFETs in high-side applications is that the gate can be pulled to ground (or below the source) using a simple logic-level signal, whereas an N-channel high-side switch would require a gate voltage above the supply rail (requiring a charge pump). The trade-off is that P-channel MOSFETs typically have higher RDS(on) than comparable N-channel devices due to the lower mobility of holes vs. electrons. The 38 m\u03a9 RDS(on) represents a good balance for -60 V rated P-channel technology.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>S<\/td>Source<\/td>Source (connect to supply rail)<\/td><\/tr>
      2<\/td>S<\/td>Source<\/td>Source (parallel connection)<\/td><\/tr>
      3<\/td>G<\/td>Gate<\/td>Gate control input<\/td><\/tr>
      4<\/td>S<\/td>Source<\/td>Source (parallel connection)<\/td><\/tr>
      5-8<\/td>D<\/td>Drain<\/td>Drain (connect to load)<\/td><\/tr><\/table>","application_scenarios":"
      • Automotive 12V\/48V high-side load switch<\/li>
      • Battery disconnect and reverse polarity protection<\/li>
      • Automotive LED lighting power control<\/li>
      • Power distribution module switch in body electronics<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Infineon<\/td>BTS443P<\/td>TO-252<\/td>Smart high-side switch alternative<\/td><\/tr>
        Vishay<\/td>SI7465DP-T1-GE3<\/td>PowerPAK-8<\/td>P-ch, -60V, lower RDS(on)<\/td><\/tr>
        onsemi<\/td>FDD8580<\/td>TO-252<\/td>P-ch, -60V, DPAK alternative<\/td><\/tr>
        ST<\/td>STF20N60M2<\/td>TO-220<\/td>P-ch, -60V, higher current<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/9115","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/comments?post=9115"}],"version-history":[{"count":0,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/posts\/9115\/revisions"}],"wp:attachment":[{"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/media?parent=9115"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/categories?post=9115"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/tags?post=9115"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/ic-vendor.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=9115"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}