الصفحة الرئيسية > الدوائر المتكاملة الدوائر المتكاملة > الدوائر المتكاملة الخطية التناظرية > BAV199-7-F

BAV199-7-F

Low-Leakage Series Diode Pair, 70V, 3nA IR, SOT-23-3

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جزء الشركة المصنعة ： جزء الشركة المصنعة

BAV199-7-F

الحزمة ： الحزمة

SOT-23-3 (2.9 x 1.3 x 1.0 mm)

الوصف

نظرة عامة على المنتج

The BAV199-7-F from Diodes Incorporated is a 70V, 100mA low-leakage double switching diode (series pair) in a SOT-23-3 package, designed for ultra-low leakage applications.

المواصفات الرئيسية

النوع	Low-Leakage Double Switching Diode (Series Pair)
التكوين	2 diodes in series
Peak Reverse Voltage	70 V
Average Rectified Current	100 mA
Forward Voltage	1.0 V (max) @ IF=10mA
Reverse Leakage	3 nA (max) @ VR=70V
Reverse Recovery Time	50 ns (typical)
Junction Capacitance	1.5 pF (typical)
الحزمة	SOT-23-3
درجة حرارة التشغيل	-65C to +150C

الميزات

Ultra-low 3 nA reverse leakage at 70V
70V high reverse voltage rating
1.5 pF low junction capacitance
Two diodes in series for high isolation
SOT-23-3 surface mount package

التطبيقات

High-impedance circuit protection
Precision analog signal clamping
ESD protection for sensitive inputs
Sample-and-hold circuits

مقدمة المنتج:BAV199-7-F مقدمة المنتج

The BAV199-7-F from Diodes Incorporated is a low-leakage double switching diode array with two diodes connected in series, housed in a SOT-23-3 package. The device is specifically designed for applications requiring ultra-low reverse leakage current, with a maximum of only 3 nA at 70V. This makes it ideal for protecting high-impedance inputs in precision analog circuits such as op amp inputs, sample-and-hold circuits, and precision ADC front-ends. The 70V reverse voltage rating provides wide margin for most signal-level applications. The 1.5 pF junction capacitance minimizes loading on high-frequency signal paths. The series diode configuration doubles the effective reverse voltage rating and reduces leakage compared to a single diode.

مبدأ العمل:BAV199-7-F مبدأ العمل

The BAV199-7-F uses a silicon planar epitaxial process to achieve the ultra-low 3 nA reverse leakage. The diodes are constructed with carefully controlled doping profiles and passivation to minimize generation-recombination currents in the depletion region. In the series configuration, the two diodes share the reverse voltage, each blocking approximately half, which further reduces the per-diode leakage and increases the effective breakdown voltage. When forward biased, current flows through both diodes in series with a combined forward voltage of approximately 1.0V at 10mA. The 1.5 pF junction capacitance is achieved through a small junction area, which also contributes to the low leakage. The 50ns reverse recovery time is typical for a low-leakage silicon diode, slower than Schottky diodes but acceptable for most signal-level switching applications.

وصف الدبوس:BAV199-7-F تعريف الدبوس ووظائفه

دبوس	الاسم	النوع	الوظيفة
1	Anode 1	Terminal	Anode of diode 1
2	Common	Terminal	Cathode 1 / Anode 2 (series junction)
3	Cathode 2	Terminal	Cathode of diode 2

Application Scenarios:In which products and applications isBAV199-7-F مستعمل

Precision op amp input ESD protection with 3nA leakage preserving nanoamp bias current
Sample-and-hold circuit diode clamping with low droop rate
High-impedance pH electrode input protection with minimal leakage
Analog switch off-state isolation boosting with series diode pair

Alternative Models:What chips are recommended as replacements for BAV199-7-F

الشركة المصنعة	رقم الجزء	الحزمة	الملاحظات
نيكسبيريا	BAV199,215	SOT-23	Pin-compatible equivalent
أونسمي	BAV99LT1G	SOT-23	Similar class, common cathode
نيكسبيريا	BAS416	SOD-323	Single low-leakage diode, 3pA
شركة ديودز	BAV199DW-7-F	SOT-363	Dual series pair, smaller package
نيكسبيريا	BAV199,235	SOT-23	Same, different packing