نظرة عامة على المنتج
The Rohm SH8KC6TB1 is a dual N-channel MOSFET in an SOP-8 package, featuring 60V drain-source voltage and 6.5A continuous drain current per channel. With low on-resistance of 25mΩ at VGS=10V, it is ideal for switching applications requiring compact dual-MOSFET solutions.
المواصفات الرئيسية
| نوع القناة | N+N (Dual N-channel) |
| Drain-Source Voltage (VDSS) | 60 V |
| Continuous Drain Current (ID) | 6.5 A (per channel, TC=25°C) |
| Pulsed Drain Current | 26 A |
| RDS(on) at VGS=10V | 25 mΩ (typ), 32 mΩ (max) |
| RDS(on) at VGS=4.5V | 33 mΩ (typ), 46 mΩ (max) |
| Gate Threshold Voltage | 1.0 فولت إلى 2.5 فولت |
| Total Gate Charge (Qg) | 3.9 nC (typ) |
| Forward Transconductance | 4.2 S |
| تبديد الطاقة | 2.0W (ceramic board), 1.4W (copper board) |
| Junction Temperature | -55 درجة مئوية إلى +150 درجة مئوية |
| Gate-Source Voltage | ±20V |
| الحزمة | SOP-8 (6.0×5.0×1.75mm) |
| Avalanche Energy | 3.5 mJ |
الميزات
- Dual N-channel MOSFET in compact SOP-8 package
- Low on-resistance: 25mΩ at VGS=10V
- Drive voltage: 4.5V capable
- Lead-free plating, RoHS compliant
- Halogen free
- Surface mount package for automated assembly
التطبيقات
- Switching power supplies
- محولات DC-DC
- Motor drivers
- Load switches
- Battery management systems