نظرة عامة على المنتج
The SI4850EY-T1-GE3 from Vishay Siliconix is a 60 V N-Channel TrenchFET power MOSFET in an SO-8 (SOIC N) surface-mount package. Featuring RDS(on) of 22 mOhm at 10 V gate drive, 8.5 A continuous drain current, and reduced gate charge of 18 nC, it is optimized for fast switching in DC-DC converters and motor drive applications.
المواصفات الرئيسية
| VDS | 60 V |
| ID (Continuous) | 8.5 A (Tc=25 degC) / 6 A (Ta=25 degC) |
| RDS(on) Max | 22 mOhm @ VGS=10V |
| RDS(on) Max | 31 mOhm @ VGS=4.5V |
| VGS(th) | 1.0 to 3.0 V |
| Qg (Typical) | 18 nC @ VGS=10V |
| Ciss (Typical) | 710 pF @ VDS=15V |
| تبديد الطاقة | 3.3 W (Ta) / 1.7 W (steady) |
| الحزمة | SO-8 (SOIC N) |
| درجة حرارة التشغيل | -55 to +175 degC |
الميزات
- Reduced Qg for fast and efficient switching
- TrenchFET power MOSFET technology
- 60 V rating for 48 V system compatibility
- Industry-standard SO-8 footprint
- Halogen-free and RoHS compliant
- 175 degC maximum junction temperature
التطبيقات
- DC-DC converter primary side switch
- Motor drive and load switching
- 48 V telecom power systems
- Industrial control power switching
- Battery-powered system power management