نظرة عامة على المنتج
The STN1NK60ZL from STMicroelectronics is an N-channel 600V SuperMESH Power MOSFET with a typical on-resistance of 10.4Ω and drain current of 0.44A. It uses the innovative Strip Layout (ZL) process for improved gate charge and switching performance. Housed in a SOT-223 package, it is designed for offline SMPS and lighting applications.
المواصفات الرئيسية
| النوع | N-channel MOSFET |
| Drain-Source Voltage (VDSS) | 600V |
| On-Resistance (RDS(on)) | 10.4Ω (typical) |
| Continuous Drain Current (ID) | 0.44A (at 25°C) |
| Gate Threshold Voltage | 3V (typical) |
| Total Gate Charge (Qg) | 9.7 nC (typical) |
| Input Capacitance (Ciss) | 160 pF (typical) |
| درجة حرارة التشغيل | -55 درجة مئوية إلى +150 درجة مئوية |
| الحزمة | SOT-223 |
| Technology | SuperMESH with Strip Layout (ZL) |
الميزات
- 600V N-channel SuperMESH Power MOSFET
- Strip Layout (ZL) process for lower gate charge
- Low input capacitance: 160 pF
- 100% avalanche tested
- Gate charge optimized for high-frequency switching
- Compact SOT-223 surface-mount package
- Internal Zener diode for gate ESD protection (ZL version)
التطبيقات
- Offline flyback converters
- Switching mode power supplies (SMPS)
- LED lighting drivers
- Auxiliary power supplies
- Motor drive pre-regulators
- Power management in consumer electronics