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BSS138PS

Dual 60V 320mA N-channel Trench MOSFET, logic-level, SOT363, AEC-Q101, RDSon 1.6Ω, 0.72nC Qg

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Manufacturer Part：

BSS138PS

Package：

SOT363 (SC-88) 2.1 x 2.0 x 0.95 mm, 6 leads

Brand：

Product Categories：

Integrated Circuits ICs, MOSFETs

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Description

Product Overview

The Nexperia BSS138PS is a dual 60V, 320mA N-channel Trench MOSFET in a compact SOT363 (SC-88) package. It features logic-level gate drive, low RDSon of 1.6 Ω, fast switching, and AEC-Q101 qualification, providing two independently controllable N-channel MOSFETs in a single tiny package.

Key Specifications

Drain-Source Voltage (VDS)	60 V
Continuous Drain Current (ID)	320 mA (per channel)
On-Resistance (RDSon max)	1.6 Ω @ VGS=10V; 2.0 Ω @ VGS=5V
Gate Threshold Voltage (VGSth)	1.2 V (typical)
Total Gate Charge (Qg)	0.72 nC @ VGS=4.5V
Input Capacitance (Ciss)	38 pF
Number of Transistors	2 (dual N-channel)
Power Dissipation	0.28 W (total)
Operating Temperature	-55°C to +150°C
Qualification	AEC-Q101

Features

Dual N-channel MOSFET in ultra-small SOT363 package
Logic-level compatible with low threshold voltage
Very fast switching with 0.72 nC total gate charge
Trench MOSFET technology for low RDSon
AEC-Q101 qualified for automotive applications
Two independent transistors for compact design

Applications

Dual relay driver circuits
High-speed differential line drivers
Dual low-side load switches
Push-pull switching circuits

Product Introduction:BSS138PS Product Introduction

The Nexperia BSS138PS is a dual N-channel enhancement mode Trench MOSFET housed in an ultra-compact SOT363 (SC-88) surface-mount plastic package. Each transistor features a maximum drain-source voltage of 60V and continuous drain current of 320mA. The device uses Trench MOSFET technology to achieve low on-resistance of 1.6 Ω maximum at VGS=10V and 2.0 Ω at VGS=5V, enabling logic-level gate drive compatibility. With a total gate charge of only 0.72 nC, both transistors offer very fast switching performance. The dual configuration provides two independently controllable N-channel MOSFETs in a single 6-lead package, ideal for space-constrained applications. The BSS138PS is AEC-Q101 qualified and operates from -55°C to +150°C.

Working Principle:BSS138PS Working Principle

The BSS138PS integrates two independent N-channel enhancement mode Trench MOSFETs in a single SOT363 package. Each transistor operates identically to a single BSS138P: applying a positive gate-source voltage above the threshold (≈1.2V) creates a conductive channel between drain and source. The Trench MOSFET architecture provides high channel density and low RDSon. The two transistors share a common source pin (pin 2), while each has independent gate (pins 1 and 5) and drain (pins 6 and 3) connections. This configuration is particularly useful for push-pull circuits, differential pair drivers, or dual independent load switches. The low gate charge (0.72 nC per transistor) ensures minimal switching losses at high frequencies. The body diodes provide reverse current paths for inductive loads.

Pin Description:BSS138PS Pin Definition and Functions

Pin	Name	Type	Function
1	G1	Input	Gate of transistor 1
2	S1/S2	Power	Common source (both transistors)
3	D2	Power	Drain of transistor 2
4	S1/S2	Power	Common source (both transistors)
5	G2	Input	Gate of transistor 2
6	D1	Power	Drain of transistor 1

Application Scenarios:In which products and applications isBSS138PS used

Dual relay driver circuits in automotive modules
High-speed differential line drivers for communication
Dual low-side load switches in power management
Push-pull switching circuits for motor control
Level shifting for I2C/SPI bus interfaces

Alternative Models:What chips are recommended as replacements for BSS138PS

Manufacturer	Part Number	Package	Notes
onsemi	NTJD4001NT1G	SOT-363	Dual N-channel, similar specs
Diodes Inc	BSS138PS-7	SOT-363	Direct equivalent
Toshiba	SSM3K333R	SOT-363	Dual N-channel MOSFET
Nexperia	BSS138P	SOT23	Single transistor variant
Nexperia	BSS138BKW	SOT323	Single transistor, smaller package