Inicio > Circuitos integrados IC > Circuitos integrados lineales analógicos > K4A8G165WG-BCWE

K4A8G165WG-BCWE

8Gb DDR4-3200 SDRAM, 512Mx16, 1.2V, CL22, 4-bank-group, FBGA-78

3245

Inventario efectivo

Ir a la consulta

Image for reference only

Pieza del fabricante：

K4A8G165WG-BCWE

Paquete：

FBGA-78

Descripción

Productos

The K4A8G165WG-BCWE is a 8Gbit (512M x 16) DDR4 SDRAM from Samsung operating at 1.2V with up to 3200 MT/s data rate. It uses 8-bit burst length, BL8/BC4 on-the-fly, and supports bank group architecture (4 bank groups x 4 banks). The BCWE speed bin supports CL22 timing at 3200 MT/s.

Especificaciones

Densidad	8Gbit (512M x 16)
Standard	DDR4 SDRAM
Velocidad de datos	Up to 3200 MT/s
Tensión de alimentación	1.2V (VDD), 1.2V (VDDQ)
Burst Length	8 (BL8) / 4 (BC4) on-the-fly
Bank Groups	4 x 4 = 16 banks
Latencia CAS	CL22 @ 3200 MT/s
Temperatura de funcionamiento	0°C to +95°C (normal)
Paquete	FBGA (78-ball)
Estado de las piezas	Activo

Características

8Gbit DDR4 SDRAM with x16 organization
Data rate up to 3200 MT/s (DDR4-3200)
1.2V VDD/VDDQ operation
4 bank groups with 16 total banks
BL8/BC4 on-the-fly burst length
Write leveling, read DBI, and CA training
On-die termination (ODT)
Internal VREFDQ training

Aplicaciones

DDR4 memory modules (SO-DIMM, RDIMM)
Embedded computing and networking
Graphics and video processing
AI/ML inference accelerators

Introducción del producto:K4A8G165WG-BCWE Presentación del producto

The K4A8G165WG-BCWE is an 8Gbit DDR4 SDRAM from Samsung organized as 512M x 16 bits, operating at 1.2V with data rates up to 3200 MT/s (DDR4-3200). It features 4 bank groups with 16 total banks, BL8/BC4 on-the-fly burst length, and CL22 timing at 3200 MT/s. The x16 bus width makes it suitable for high-bandwidth memory subsystems in embedded computing and networking applications.

Principio de funcionamiento:K4A8G165WG-BCWE Principio de funcionamiento

The K4A8G165WG operates as a DDR4 SDRAM following the JEDEC JESD79-4 standard. Commands are clocked on the rising edge of the clock. Data is transferred on both rising and falling edges of the DQS strobe (double data rate). Read: Activate row, then Read with column address — data appears after CL clock cycles. Write: Activate row, then Write with data. Precharge and refresh operations maintain data integrity. Bank group architecture enables pipelined operations across groups for higher bandwidth.

Descripción de la clavija:K4A8G165WG-BCWE Definición y funciones de las clavijas

Grupo Pin	Interface	Función
A0-A17, BA0-BA1, BG0-BG1	Entrada	Address, bank, bank group
DQ0-DQ15	E/S	16-bit data bus
UDQS#, UDQS, LDQS#, LDQS	E/S	Upper/lower data strobes
DM#, DBI#	E/S	Data mask / Data bus inversion
CK, CK#, CKE, CS#, ACT#	Entrada	Clock, enable, chip select, activate
RAS#, CAS#, WE#	Entrada	Command inputs
ODT	Entrada	On-die termination control