Productos
The K4B4G1646E-BCNB000 is a 4Gbit (256M x 16) DDR4 SDRAM from Samsung operating at 1.2V with up to 2666 MT/s data rate (CL19). It features 4 bank groups, BL8/BC4 on-the-fly, and on-die termination, providing reliable DDR4 memory for embedded and computing applications.
Especificaciones
| Densidad | 4Gbit (256M x 16) |
| Standard | DDR4 SDRAM |
| Velocidad de datos | Up to 2666 MT/s |
| Tensión de alimentación | 1.2V |
| Latencia CAS | CL19 @ 2666 MT/s |
| Banks | 4 BG x 4 = 16 |
| Paquete | FBGA |
| Estado de las piezas | Activo |
Características
- 4Gbit DDR4 SDRAM with x16 organization
- DDR4-2666 data rate (CL19)
- 1.2V operation
- 4 bank groups with 16 banks
- BL8/BC4 on-the-fly
- ODT, write leveling, DBI
Aplicaciones
- Embedded DDR4 subsystems
- Computing and networking
- Consumer electronics