Product Overview
The Samsung K4B2G1646F-BCK0000 is a 2Gb DDR3L SDRAM memory chip organized as 128M×16. It operates at 1.35V/1.5V with data rates up to 1600Mbps (DDR3-1600). Packaged in a 96-ball FBGA, it is designed for computing, consumer electronics, and embedded systems. Note: This product is EOL (End of Life).
Key Specifications
| Memory Density | 2 Gb (256 MB) |
| Organization | 128M × 16 |
| Memory Type | DDR3L SDRAM |
| Operating Voltage | 1.35V (DDR3L) / 1.5V (DDR3) |
| Speed Grade | DDR3-1600 (11-11-11) |
| Max Data Rate | 1600 Mbps |
| Clock Frequency | 800 MHz (max) |
| Banks | 8 |
| CAS Latency | 5, 6, 7, 8, 9, 10, 11, 13 |
| Burst Length | 8 (BL8) or 4 (BC4) |
| Package | 96 FBGA |
| Operating Temperature | 0°C to +85°C (Commercial) |
| Product Status | EOL (End of Life) |
Features
- JESD79-3 standard compliant DDR3L SDRAM
- Dual voltage support: 1.35V (DDR3L) and 1.5V (DDR3) backward compatible
- 8n-prefetch architecture with 8 banks
- On-Die Termination (ODT) and ZQ calibration
- Programmable CAS latency and additive latency
- Auto refresh, self refresh, and temperature compensated refresh
- Fly-by topology support for signal integrity
Applications
- Notebook and desktop computers
- Embedded systems and IoT devices
- Networking equipment (routers, switches)
- Industrial control and HMI
- Digital signage and security DVR/NVR
- Consumer electronics