Product Overview
The MR4A08BYS35 from Everspin is an 8Mbit (1Mx8) parallel MRAM with 35ns access time. SRAM-compatible parallel interface with unlimited write endurance – no wear-out mechanism. 20-year data retention without power. 3.3V supply. TSOP-44 package. Ideal for data logging and nonvolatile storage requiring frequent writes.
Key Specifications
| Type | Magnetoresistive Random Access Memory (MRAM) |
| Density | 8 Mbit (1M x 8) |
| Organization | 1M x 8 |
| Access Time | 35 ns |
| Interface | Parallel (SRAM-compatible) |
| Endurance | Unlimited write cycles |
| Data Retention | 20 years |
| Supply Voltage | 3.3V |
| Operating Temp | -40 to +85C |
| Package | TSOP-44 |
Working Principle
MRAM uses the magnetoresistive effect of magnetic tunnel junction (MTJ) cells for data storage. Each cell consists of two ferromagnetic layers separated by a thin insulating tunnel barrier. Data is stored as the relative magnetic orientation (parallel=0, antiparallel=1) of the two layers. Read operation measures the resistance of the MTJ (low=parallel, high=antiparallel). Write uses spin-transfer torque (STT) to switch the magnetic orientation. Since the storage mechanism is magnetic rather than charge-based, there is no wear-out – write endurance is unlimited.
Applications
- Data logging
- Nonvolatile storage
- Configuration memory
- Frequent write applications