Product Overview
The R1LP0108ESN-5SI#S1 from Renesas is an 8Mbit (1Mx8) low-power asynchronous SRAM. 55ns access time with 15uA standby current for battery-backup operation. 3.3V supply. TSOP-32 industrial package. For mobile and battery-backed memory applications.
Key Specifications
| Type | Low-Power Asynchronous SRAM |
| Density | 8 Mbit (1M x 8) |
| Organization | 1M x 8 |
| Access Time | 55 ns |
| Supply Voltage | 2.7V to 3.6V (3.3V) |
| Standby Current | 15 uA typ (data retention) |
| Active Current | 40 mA max at 55ns |
| Operating Temp | -40 to +85C (Industrial) |
| Package | TSOP-32 (8×13.4mm) |
Working Principle
The R1LP0108ESN uses a 6T SRAM cell array with power management features. The chip enable (CE2) pin, when deasserted, places the device in deep power-down mode with 15uA standby current suitable for battery-backed data retention. Address access time is 55ns. The output enable (OE) and write enable (WE) control read and write operations independently. The low-power design makes this SRAM ideal for mobile devices where battery life is critical and data must be retained during sleep modes.
Applications
- Mobile devices
- Battery-backed memory
- Cache buffer
- Networking