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SIR462DP-T1-GE3

30V 30A N-Channel MOSFET, 7.9 mOhm RDS(on), PowerPAK SO-8, 8.8 nC Qg, TrenchFET

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Manufacturer Part：

SIR462DP-T1-GE3

Package：

PowerPAK SO-8 (6.15 x 5.15 x 1.02 mm)

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Description

Product Overview

The SIR462DP-T1-GE3 from Vishay Siliconix is a 30 V N-Channel TrenchFET power MOSFET in a PowerPAK SO-8 surface-mount package. Featuring a low RDS(on) of 7.9 mOhm at 10 V gate drive and 30 A continuous drain current, it is optimized for high-side switching, server VRM, POL, and DC-DC converter applications.

Key Specifications

VDS 30 V
ID (Continuous) 30 A (Tc=25 degC)
RDS(on) Max 7.9 mOhm @ VGS=10V
RDS(on) Max 10 mOhm @ VGS=4.5V
VGS(th) 1.0 to 3.0 V
Qg (Typical) 8.8 nC @ VGS=4.5V
Ciss 1155 pF @ VDS=15V
Power Dissipation 41.7 W (Tc) / 4.8 W (Ta)
Package PowerPAK SO-8
Operating Temperature -55 to +150 degC

Features

  • Low RDS(on) of 7.9 mOhm for efficient switching
  • TrenchFET technology with 0.18 um process
  • 100% Rg and UIS tested
  • Very low gate charge of 8.8 nC for fast switching
  • Halogen-free and RoHS compliant
  • Avalanche energy rated at 48 mJ

Applications

  • High-side switch for server and VRM
  • DC-DC converter power stage
  • Point-of-load converters
  • Battery management system switching
  • Motor drive and load switching

The SIR462DP-T1-GE3 from Vishay Siliconix is a 30 V N-Channel TrenchFET power MOSFET in a PowerPAK SO-8 package. With RDS(on) of 7.9 mOhm at 10 V and 30 A continuous drain current, it is optimized for high-side switching in server VRM, POL, and DC-DC converter applications. The very low gate charge of 8.8 nC at 4.5 V enables high-frequency switching with minimal drive loss. The 0.18 um TrenchFET process provides excellent figure of merit (RDS(on) x Qg). 100% Rg and UIS tested with 48 mJ avalanche energy rating for reliability assurance.

The SIR462DP uses TrenchFET technology with a 0.18 um process to achieve low RDS(on) and low gate charge simultaneously. The trench gate structure provides high channel density with a short channel length, minimizing on-resistance. When VGS exceeds threshold (1.0 to 3.0 V), the inversion layer conducts. The low gate charge of 8.8 nC at 4.5 V enables fast switching transitions, reducing switching losses at high frequencies. The body diode provides reverse conduction path with 0.8 V typical forward voltage and 21 ns reverse recovery time.

Pin Name Type Function
1,2,3 S Source Source terminals
4 G Gate Gate control input
5,6,7,8 D Drain Drain terminals (exposed pad)
  • Server VRM high-side MOSFET
  • DC-DC buck converter control FET
  • Point-of-load converter power stage
  • Battery charger switching element
  • Load switch and hot-swap control
Manufacturer Part Number Package Notes
ONsemi FDMS86150ET80 Power56 30V 8 mOhm alternative
Infineon BSB014N04LX3 SuperSO8 40V 1.4 mOhm alternative
TI CSD17302Q5A SON5x6 30V 6.3 mOhm alternative
Vishay SIR862DP-T1-GE3 PowerPAK SO-8 25V lower RDS(on) variant
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Quality Assurance

Quality is the core foundation of our long-term global cooperation. With over 20 years of experience in the electronic component industry, Materialparts has built a strict and standardized quality management system covering component sourcing, incoming inspection, full-batch testing, packaging and delivery. We are committed to delivering 100% genuine, high-reliability electronic components for industrial control, automotive electronics, consumer electronics and medical device industries, and fully safeguarding your production and R&D projects.

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Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China

 

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Contact Information

Email: info@ic-vendor.com

Tel / WhatsApp: +86 13760382860

Service & Packaging

Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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Contact Information

For service consultation or packaging customization, please feel free to contact us:
Email: info@ic-vendor.com
Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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