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SIR862DP-T1-GE3

25V 50A N-Channel MOSFET, 2.8 mOhm RDS(on), PowerPAK SO-8, 60 nC Qg, TrenchFET

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Manufacturer Part：

SIR862DP-T1-GE3

Package：

PowerPAK SO-8 (5.99 x 5.0 x 1.12 mm)

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Description

Product Overview

The SIR862DP-T1-GE3 from Vishay Siliconix is a 25 V N-Channel TrenchFET power MOSFET in a PowerPAK SO-8 surface-mount package. Featuring an ultra-low RDS(on) of 2.8 mOhm at 10 V gate drive, 50 A continuous drain current, and 60 nC total gate charge, it is optimized for high-efficiency DC-DC conversion, synchronous rectification, and POL applications.

Key Specifications

VDS 25 V
ID (Continuous) 50 A (Tc=25 degC)
RDS(on) Max 2.8 mOhm @ VGS=10V
RDS(on) Max 3.5 mOhm @ VGS=4.5V
VGS(th) 1.2 V (min)
Qg (Typical) 60 nC @ VGS=10V
Qg (Typical) 28.4 nC @ VGS=4.5V
Ciss 3800 pF @ VDS=10V
Power Dissipation 69 W (Tc=25 degC)
Package PowerPAK SO-8
Operating Temperature -55 to +150 degC

Features

  • Ultra-low RDS(on) of 2.8 mOhm for minimum conduction loss
  • TrenchFET technology for high efficiency
  • 100% Rg and UIS tested for reliability
  • Low gate charge for fast switching
  • PowerPAK SO-8 with exposed pad for thermal management
  • Halogen-free and RoHS compliant

Applications

  • DC-DC converter synchronous rectification
  • Point-of-load (POL) converters
  • Server and VRM power stages
  • Battery management system switching
  • Motor drive low-side switches

The SIR862DP-T1-GE3 from Vishay Siliconix is a 25 V N-Channel TrenchFET power MOSFET in a PowerPAK SO-8 package. With an ultra-low RDS(on) of 2.8 mOhm at 10 V gate drive and 50 A continuous drain current, it is optimized for high-efficiency synchronous rectification and DC-DC conversion. The low gate charge of 28.4 nC at 4.5 V enables fast switching with minimal drive loss. The PowerPAK SO-8 package with exposed thermal pad provides excellent thermal performance with 69 W power dissipation capability. 100% Rg and UIS tested for reliability assurance.

The SIR862DP operates as a voltage-controlled switch using TrenchFET technology. The trench gate structure provides high cell density, resulting in ultra-low RDS(on) of 2.8 mOhm. When VGS exceeds the threshold (1.2 V min), an inversion layer forms in the P-body, creating a conductive N-channel. The low RDS(on) minimizes conduction losses (P = I2 x RDS(on)), critical for high-current DC-DC converters where even milliohms of resistance cause significant power dissipation. The 60 nC gate charge at 10 V represents the total charge that must be supplied to the gate for each switching cycle, determining the drive power requirement and switching speed.

Pin Name Type Function
1,2,3 S Source Source terminals
4 G Gate Gate control input
5,6,7,8 D Drain Drain terminals (thermal pad)
  • Server VRM synchronous rectification MOSFET
  • DC-DC buck converter low-side switch
  • Point-of-load converter power stage
  • Battery management system charge FET
  • Motor drive low-side switching element
Manufacturer Part Number Package Notes
ONsemi FDMS86180ET100 Power56 25V 2.4 mOhm alternative
Infineon BSB093N15NS5 SuperSO8 25V 3.1 mOhm alternative
TI CSD16406Q3 SON3x3 25V 3.4 mOhm alternative
Vishay SIR662DP-T1-GE3 PowerPAK SO-8 60V higher voltage variant
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China

 

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Contact Information

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Tel / WhatsApp: +86 13760382860

Service & Packaging

Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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Contact Information

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Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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